JPS50129187A - - Google Patents

Info

Publication number
JPS50129187A
JPS50129187A JP50018678A JP1867875A JPS50129187A JP S50129187 A JPS50129187 A JP S50129187A JP 50018678 A JP50018678 A JP 50018678A JP 1867875 A JP1867875 A JP 1867875A JP S50129187 A JPS50129187 A JP S50129187A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50018678A
Other languages
Japanese (ja)
Other versions
JPS5759675B2 (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50129187A publication Critical patent/JPS50129187A/ja
Publication of JPS5759675B2 publication Critical patent/JPS5759675B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10W99/00—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/644—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
JP50018678A 1974-03-27 1975-02-14 Expired JPS5759675B2 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US455050A US3909924A (en) 1974-03-27 1974-03-27 Method of fabrication of silicon pressure transducer sensor units

Publications (2)

Publication Number Publication Date
JPS50129187A true JPS50129187A (cg-RX-API-DMAC10.html) 1975-10-13
JPS5759675B2 JPS5759675B2 (cg-RX-API-DMAC10.html) 1982-12-15

Family

ID=23807177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50018678A Expired JPS5759675B2 (cg-RX-API-DMAC10.html) 1974-03-27 1975-02-14

Country Status (6)

Country Link
US (1) US3909924A (cg-RX-API-DMAC10.html)
JP (1) JPS5759675B2 (cg-RX-API-DMAC10.html)
CA (1) CA1016668A (cg-RX-API-DMAC10.html)
DE (1) DE2503781C2 (cg-RX-API-DMAC10.html)
FR (1) FR2266314B1 (cg-RX-API-DMAC10.html)
GB (1) GB1476582A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57500491A (cg-RX-API-DMAC10.html) * 1980-04-14 1982-03-18

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121334A (en) * 1974-12-17 1978-10-24 P. R. Mallory & Co. Inc. Application of field-assisted bonding to the mass production of silicon type pressure transducers
US4023562A (en) * 1975-09-02 1977-05-17 Case Western Reserve University Miniature pressure transducer for medical use and assembly method
US4144516A (en) * 1976-03-29 1979-03-13 Aine Harry E Solid state transducer and method of making same
US4133100A (en) * 1976-12-27 1979-01-09 Myhre Kjell E Method of making diaphragm of optimized stress and strain distribution
US4376929A (en) * 1976-12-27 1983-03-15 Myhre Kjell E Optimized stress and strain distribution diaphragms
US4790192A (en) * 1987-09-24 1988-12-13 Rosemount Inc. Silicon side by side coplanar pressure sensors
US4987780A (en) * 1987-11-16 1991-01-29 Litton Systems, Inc. Integrated accelerometer assembly
US5006487A (en) * 1989-07-27 1991-04-09 Honeywell Inc. Method of making an electrostatic silicon accelerometer
JPH0352186U (cg-RX-API-DMAC10.html) * 1989-09-28 1991-05-21
US6903084B2 (en) 1991-08-28 2005-06-07 Sterix Limited Steroid sulphatase inhibitors
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
US6021675A (en) * 1995-06-07 2000-02-08 Ssi Technologies, Inc. Resonating structure and method for forming the resonating structure
US5636729A (en) * 1995-06-12 1997-06-10 Wiciel; Richard Piezo switch
US5874679A (en) * 1996-04-04 1999-02-23 Ssi Technologies, Inc. Pressure sensor package and method of making the same
DE69706213T2 (de) * 1996-04-04 2002-05-16 Ssi Technologies, Inc. Druckmessgerät und Verfahren zu seiner Herstellung
US5831170A (en) * 1996-04-04 1998-11-03 Ssi Technologies, Inc. Pressure sensor package and method of making the same
US5999082A (en) * 1998-03-25 1999-12-07 Kulite Semiconductor Products, Inc. Compensated oil-filled pressure transducers
EP1144977B1 (de) * 1998-12-15 2003-10-15 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Verfahren zum erzeugen eines mikro-elektromechanischen elements
US7335650B2 (en) * 2000-01-14 2008-02-26 Sterix Limited Composition
JP2006237118A (ja) * 2005-02-23 2006-09-07 Matsushita Electric Ind Co Ltd 圧電素子の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3160539A (en) * 1958-09-08 1964-12-08 Trw Semiconductors Inc Surface treatment of silicon
US3757414A (en) * 1971-03-26 1973-09-11 Honeywell Inc Method for batch fabricating semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57500491A (cg-RX-API-DMAC10.html) * 1980-04-14 1982-03-18

Also Published As

Publication number Publication date
FR2266314B1 (cg-RX-API-DMAC10.html) 1980-11-07
US3909924A (en) 1975-10-07
DE2503781C2 (de) 1984-06-28
JPS5759675B2 (cg-RX-API-DMAC10.html) 1982-12-15
GB1476582A (en) 1977-06-16
FR2266314A1 (cg-RX-API-DMAC10.html) 1975-10-24
CA1016668A (en) 1977-08-30
DE2503781A1 (de) 1976-02-05

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