JPS5759675B2 - - Google Patents

Info

Publication number
JPS5759675B2
JPS5759675B2 JP50018678A JP1867875A JPS5759675B2 JP S5759675 B2 JPS5759675 B2 JP S5759675B2 JP 50018678 A JP50018678 A JP 50018678A JP 1867875 A JP1867875 A JP 1867875A JP S5759675 B2 JPS5759675 B2 JP S5759675B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50018678A
Other versions
JPS50129187A (ja
Inventor
Efu Heaa Uiriamu
Bindashiusu Arufuonsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of JPS50129187A publication Critical patent/JPS50129187A/ja
Publication of JPS5759675B2 publication Critical patent/JPS5759675B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP50018678A 1974-03-27 1975-02-14 Expired JPS5759675B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US455050A US3909924A (en) 1974-03-27 1974-03-27 Method of fabrication of silicon pressure transducer sensor units

Publications (2)

Publication Number Publication Date
JPS50129187A JPS50129187A (ja) 1975-10-13
JPS5759675B2 true JPS5759675B2 (ja) 1982-12-15

Family

ID=23807177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50018678A Expired JPS5759675B2 (ja) 1974-03-27 1975-02-14

Country Status (6)

Country Link
US (1) US3909924A (ja)
JP (1) JPS5759675B2 (ja)
CA (1) CA1016668A (ja)
DE (1) DE2503781C2 (ja)
FR (1) FR2266314B1 (ja)
GB (1) GB1476582A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0352186U (ja) * 1989-09-28 1991-05-21

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121334A (en) * 1974-12-17 1978-10-24 P. R. Mallory & Co. Inc. Application of field-assisted bonding to the mass production of silicon type pressure transducers
US4023562A (en) * 1975-09-02 1977-05-17 Case Western Reserve University Miniature pressure transducer for medical use and assembly method
US4144516A (en) * 1976-03-29 1979-03-13 Aine Harry E Solid state transducer and method of making same
US4376929A (en) * 1976-12-27 1983-03-15 Myhre Kjell E Optimized stress and strain distribution diaphragms
US4133100A (en) * 1976-12-27 1979-01-09 Myhre Kjell E Method of making diaphragm of optimized stress and strain distribution
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
US4790192A (en) * 1987-09-24 1988-12-13 Rosemount Inc. Silicon side by side coplanar pressure sensors
US4987780A (en) * 1987-11-16 1991-01-29 Litton Systems, Inc. Integrated accelerometer assembly
US5006487A (en) * 1989-07-27 1991-04-09 Honeywell Inc. Method of making an electrostatic silicon accelerometer
US6903084B2 (en) 1991-08-29 2005-06-07 Sterix Limited Steroid sulphatase inhibitors
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
US6021675A (en) * 1995-06-07 2000-02-08 Ssi Technologies, Inc. Resonating structure and method for forming the resonating structure
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
US5636729A (en) * 1995-06-12 1997-06-10 Wiciel; Richard Piezo switch
US5874679A (en) * 1996-04-04 1999-02-23 Ssi Technologies, Inc. Pressure sensor package and method of making the same
US5831170A (en) * 1996-04-04 1998-11-03 Ssi Technologies, Inc. Pressure sensor package and method of making the same
DE69706213T2 (de) * 1996-04-04 2002-05-16 Ssi Technologies, Inc. Druckmessgerät und Verfahren zu seiner Herstellung
US5999082A (en) * 1998-03-25 1999-12-07 Kulite Semiconductor Products, Inc. Compensated oil-filled pressure transducers
EP1144977B1 (de) * 1998-12-15 2003-10-15 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Verfahren zum erzeugen eines mikro-elektromechanischen elements
US7335650B2 (en) * 2000-01-14 2008-02-26 Sterix Limited Composition
JP2006237118A (ja) * 2005-02-23 2006-09-07 Matsushita Electric Ind Co Ltd 圧電素子の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3160539A (en) * 1958-09-08 1964-12-08 Trw Semiconductors Inc Surface treatment of silicon
US3757414A (en) * 1971-03-26 1973-09-11 Honeywell Inc Method for batch fabricating semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0352186U (ja) * 1989-09-28 1991-05-21

Also Published As

Publication number Publication date
DE2503781C2 (de) 1984-06-28
FR2266314A1 (ja) 1975-10-24
CA1016668A (en) 1977-08-30
JPS50129187A (ja) 1975-10-13
DE2503781A1 (de) 1976-02-05
US3909924A (en) 1975-10-07
GB1476582A (en) 1977-06-16
FR2266314B1 (ja) 1980-11-07

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