JPS50119566A - - Google Patents
Info
- Publication number
- JPS50119566A JPS50119566A JP49024637A JP2463774A JPS50119566A JP S50119566 A JPS50119566 A JP S50119566A JP 49024637 A JP49024637 A JP 49024637A JP 2463774 A JP2463774 A JP 2463774A JP S50119566 A JPS50119566 A JP S50119566A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/068—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49024637A JPS50119566A (US06653308-20031125-C00199.png) | 1974-03-01 | 1974-03-01 | |
| DE2508121A DE2508121C3 (de) | 1974-03-01 | 1975-02-25 | Verfahren und Vorrichtung zum epitaktischen Abscheiden einer Verbindungshalbleiterschicht aus einer Lösungsschmelze auf einem Halbleiterplättchen |
| US05/553,488 US3996891A (en) | 1974-03-01 | 1975-02-27 | Liquid phase epitaxial growth apparatus wherein contacted wafer floats |
| GB8531/75A GB1494254A (en) | 1974-03-01 | 1975-02-28 | Liquid phase epitaxial growth |
| FR7506403A FR2280202A1 (fr) | 1974-03-01 | 1975-02-28 | Appareil et procede de croissance epitaxiale en phase liquide |
| CA220,998A CA1051325A (en) | 1974-03-01 | 1975-02-28 | Liquid phase epitaxial growth |
| NL7502495A NL7502495A (nl) | 1974-03-01 | 1975-03-03 | Vorming van epitaxiale laag uit de vloeibare fase. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49024637A JPS50119566A (US06653308-20031125-C00199.png) | 1974-03-01 | 1974-03-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50119566A true JPS50119566A (US06653308-20031125-C00199.png) | 1975-09-19 |
Family
ID=12143632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49024637A Pending JPS50119566A (US06653308-20031125-C00199.png) | 1974-03-01 | 1974-03-01 |
Country Status (7)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3315794C2 (de) * | 1983-04-30 | 1985-11-07 | Telefunken electronic GmbH, 7100 Heilbronn | Vorrichtung zur Flüssigphasenepitaxie |
| US4500367A (en) * | 1983-10-31 | 1985-02-19 | At&T Bell Laboratories | LPE Growth on group III-V compound semiconductor substrates containing phosphorus |
| US4550645A (en) * | 1984-04-27 | 1985-11-05 | Sundstrand Corporation | Thin valve plate for a hydraulic unit |
| DE3617404A1 (de) * | 1986-05-23 | 1987-11-26 | Telefunken Electronic Gmbh | Verfahren zum epitaktischen abscheiden duenner einkristalliner halbleiterschichten aus pseudobinaerem halbleitermaterial auf einem einkristallinen substrat |
| DE3706512A1 (de) * | 1987-02-28 | 1988-09-08 | Philips Patentverwaltung | Verfahren und vorrichtung zur herstellung epitaxialer schichten aus schmelzfluessigen loesungen |
| DE4030231A1 (de) * | 1989-09-26 | 1991-04-11 | Mitsubishi Cable Ind Ltd | Anorganische komponente fuer die kristallzuechtung und diese verwendende fluessigphasen-epitaxie-apparatur |
| US5155062A (en) * | 1990-12-20 | 1992-10-13 | Cree Research, Inc. | Method for silicon carbide chemical vapor deposition using levitated wafer system |
| US5264397A (en) * | 1991-02-15 | 1993-11-23 | The Whitaker Corporation | Method for activating zinc in semiconductor devices |
| JP2885268B2 (ja) * | 1994-08-30 | 1999-04-19 | 信越半導体株式会社 | 液相成長方法及び装置 |
| CN112002786B (zh) * | 2020-06-29 | 2021-10-08 | 华灿光电（浙江）有限公司 | 发光二极管外延片的制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US616821A (en) * | 1898-12-27 | Process of and apparatus for obtaining crystals | ||
| US2414680A (en) * | 1944-07-29 | 1947-01-21 | Polaroid Corp | Process of crystal formation |
| US2414679A (en) * | 1944-09-14 | 1947-01-21 | Polaroid Corp | Process of crystal formation |
| US2759803A (en) * | 1950-05-22 | 1956-08-21 | Gen Electric Co Ltd | Methods for use in the growing of crystals |
| US2810366A (en) * | 1954-04-14 | 1957-10-22 | Technicon Int Ltd | Receptacle carrier for tissue processing |
| US3460510A (en) * | 1966-05-12 | 1969-08-12 | Dow Corning | Large volume semiconductor coating reactor |
| NL6614999A (US06653308-20031125-C00199.png) * | 1966-10-22 | 1968-04-23 | ||
| US3463680A (en) * | 1966-11-25 | 1969-08-26 | Massachusetts Inst Technology | Solution growth of epitaxial layers of semiconductor material |
| JPS53271B1 (US06653308-20031125-C00199.png) * | 1971-03-05 | 1978-01-06 | ||
| US3765959A (en) * | 1971-07-30 | 1973-10-16 | Tokyo Shibaura Electric Co | Method for the liquid phase epitaxial growth of semiconductor crystals |
| JPS5342230B2 (US06653308-20031125-C00199.png) * | 1972-10-19 | 1978-11-09 |
-
1974
- 1974-03-01 JP JP49024637A patent/JPS50119566A/ja active Pending
-
1975
- 1975-02-25 DE DE2508121A patent/DE2508121C3/de not_active Expired
- 1975-02-27 US US05/553,488 patent/US3996891A/en not_active Expired - Lifetime
- 1975-02-28 FR FR7506403A patent/FR2280202A1/fr active Granted
- 1975-02-28 GB GB8531/75A patent/GB1494254A/en not_active Expired
- 1975-02-28 CA CA220,998A patent/CA1051325A/en not_active Expired
- 1975-03-03 NL NL7502495A patent/NL7502495A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2508121C3 (de) | 1980-08-14 |
| GB1494254A (en) | 1977-12-07 |
| US3996891A (en) | 1976-12-14 |
| DE2508121B2 (de) | 1979-12-06 |
| CA1051325A (en) | 1979-03-27 |
| DE2508121A1 (de) | 1975-09-04 |
| FR2280202A1 (fr) | 1976-02-20 |
| NL7502495A (nl) | 1975-09-03 |
| FR2280202B1 (US06653308-20031125-C00199.png) | 1978-12-29 |
