JPS50108002A - - Google Patents

Info

Publication number
JPS50108002A
JPS50108002A JP1346574A JP1346574A JPS50108002A JP S50108002 A JPS50108002 A JP S50108002A JP 1346574 A JP1346574 A JP 1346574A JP 1346574 A JP1346574 A JP 1346574A JP S50108002 A JPS50108002 A JP S50108002A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1346574A
Other versions
JPS5614970B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1346574A priority Critical patent/JPS5614970B2/ja
Priority to GB442075A priority patent/GB1492620A/en
Publication of JPS50108002A publication Critical patent/JPS50108002A/ja
Priority to US05/765,036 priority patent/US4196003A/en
Publication of JPS5614970B2 publication Critical patent/JPS5614970B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP1346574A 1974-02-01 1974-02-01 Expired JPS5614970B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1346574A JPS5614970B2 (ja) 1974-02-01 1974-02-01
GB442075A GB1492620A (en) 1974-02-01 1975-01-31 Ortho-quinonediazide light-sensitive copying material
US05/765,036 US4196003A (en) 1974-02-01 1977-02-02 Light-sensitive o-quinone diazide copying composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1346574A JPS5614970B2 (ja) 1974-02-01 1974-02-01

Publications (2)

Publication Number Publication Date
JPS50108002A true JPS50108002A (ja) 1975-08-26
JPS5614970B2 JPS5614970B2 (ja) 1981-04-07

Family

ID=11833882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1346574A Expired JPS5614970B2 (ja) 1974-02-01 1974-02-01

Country Status (2)

Country Link
JP (1) JPS5614970B2 (ja)
GB (1) GB1492620A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002105A1 (en) * 1977-11-23 1979-05-30 International Business Machines Corporation Process for increasing the solubility rate ratio of a positive-working resist
JPS5532088A (en) * 1978-08-30 1980-03-06 Fuji Photo Film Co Ltd Photo mask forming method
JPS5636648A (en) * 1979-09-03 1981-04-09 Fuji Photo Film Co Ltd Photosensitive material and pattern forming method using it
JPS61200537A (ja) * 1985-02-27 1986-09-05 イムテツク・プロダクツ・インコ−ポレ−テツド 蒸気拡散画像反転によりポジのホトレジストの画像の質を高める方法
JPS63237053A (ja) * 1987-03-26 1988-10-03 Japan Synthetic Rubber Co Ltd 集積回路作製用ポジ型感放射線性樹脂組成物
US5286609A (en) * 1988-11-01 1994-02-15 Yamatoya & Co., Ltd. Process for the formation of a negative resist pattern from a composition comprising a diazoquinone compound and an imidazole and having as a heat step the use of a hot water containing spray

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498244A (en) * 1978-01-20 1979-08-03 Toray Industries Method of forming positive photo resist image
JPS5590943A (en) * 1978-12-28 1980-07-10 Fuji Photo Film Co Ltd Photosensitive material and image forming method applicable thereto
US4548688A (en) * 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
CA1281578C (en) * 1985-07-18 1991-03-19 Susan A. Ferguson High contrast photoresist developer with enhanced sensitivity
US5066568A (en) * 1985-08-05 1991-11-19 Hoehst Celanese Corporation Method of developing negative working photographic elements
US4980271A (en) * 1985-08-05 1990-12-25 Hoechst Celanese Corporation Developer compositions for lithographic printing plates with benzyl alcohol, potassium toluene sulfonate and sodium (xylene or cumene) sulfonate
JPS6478249A (en) * 1987-09-18 1989-03-23 Fuji Photo Film Co Ltd Photosensitive material and image forming method
DE3738603A1 (de) * 1987-11-13 1989-05-24 Merck Patent Gmbh Lagerstabile positiv-fotoresist-zusammensetzungen
DE4013575C2 (de) * 1990-04-27 1994-08-11 Basf Ag Verfahren zur Herstellung negativer Reliefkopien
DE4107390A1 (de) * 1991-03-08 1992-09-10 Hoechst Ag Gefaerbtes, positiv arbeitendes, lichtempfindliches aufzeichnungsmaterial und verfahren zur herstellung sowohl positiver als auch negativer farbpruefbilder unter verwendung dieses materials

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002105A1 (en) * 1977-11-23 1979-05-30 International Business Machines Corporation Process for increasing the solubility rate ratio of a positive-working resist
JPS5532088A (en) * 1978-08-30 1980-03-06 Fuji Photo Film Co Ltd Photo mask forming method
JPS5636648A (en) * 1979-09-03 1981-04-09 Fuji Photo Film Co Ltd Photosensitive material and pattern forming method using it
JPS61200537A (ja) * 1985-02-27 1986-09-05 イムテツク・プロダクツ・インコ−ポレ−テツド 蒸気拡散画像反転によりポジのホトレジストの画像の質を高める方法
JPS63237053A (ja) * 1987-03-26 1988-10-03 Japan Synthetic Rubber Co Ltd 集積回路作製用ポジ型感放射線性樹脂組成物
US5286609A (en) * 1988-11-01 1994-02-15 Yamatoya & Co., Ltd. Process for the formation of a negative resist pattern from a composition comprising a diazoquinone compound and an imidazole and having as a heat step the use of a hot water containing spray

Also Published As

Publication number Publication date
JPS5614970B2 (ja) 1981-04-07
GB1492620A (en) 1977-11-23

Similar Documents

Publication Publication Date Title
JPS5614970B2 (ja)
IN148246B (ja)
FR2313568B1 (ja)
FR2270579A1 (ja)
FR2265487B2 (ja)
FR2288794B3 (ja)
FR2291147B3 (ja)
FR2269477B1 (ja)
FR2260847B1 (ja)
FR2261778A1 (ja)
DE2407171C3 (ja)
FR2287757B1 (ja)
JPS50100509U (ja)
JPS50103485U (ja)
FI196874A (ja)
BG22309A1 (ja)
BG20738A1 (ja)
CH1357474A4 (ja)
CH1107074A4 (ja)
BG26152A1 (ja)
BG23188A1 (ja)
BG22732A1 (ja)
BG22484A1 (ja)
BG20853A1 (ja)
BG22203A1 (ja)