JPS50100979A - - Google Patents

Info

Publication number
JPS50100979A
JPS50100979A JP103474A JP103474A JPS50100979A JP S50100979 A JPS50100979 A JP S50100979A JP 103474 A JP103474 A JP 103474A JP 103474 A JP103474 A JP 103474A JP S50100979 A JPS50100979 A JP S50100979A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP103474A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP103474A priority Critical patent/JPS50100979A/ja
Publication of JPS50100979A publication Critical patent/JPS50100979A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP103474A 1973-12-30 1973-12-30 Pending JPS50100979A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP103474A JPS50100979A (ja) 1973-12-30 1973-12-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP103474A JPS50100979A (ja) 1973-12-30 1973-12-30

Publications (1)

Publication Number Publication Date
JPS50100979A true JPS50100979A (ja) 1975-08-11

Family

ID=11490269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP103474A Pending JPS50100979A (ja) 1973-12-30 1973-12-30

Country Status (1)

Country Link
JP (1) JPS50100979A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591118A (en) * 1978-12-28 1980-07-10 Fujitsu Ltd Production of semiconductor device
JPS6016417A (ja) * 1983-07-08 1985-01-28 Agency Of Ind Science & Technol 半導体結晶成長法
JPS60204695A (ja) * 1984-03-28 1985-10-16 Mitsubishi Metal Corp 人工ダイヤモンド皮膜の析出形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
JPS4834039A (ja) * 1971-09-03 1973-05-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
JPS4834039A (ja) * 1971-09-03 1973-05-15

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591118A (en) * 1978-12-28 1980-07-10 Fujitsu Ltd Production of semiconductor device
JPS6016417A (ja) * 1983-07-08 1985-01-28 Agency Of Ind Science & Technol 半導体結晶成長法
JPS60204695A (ja) * 1984-03-28 1985-10-16 Mitsubishi Metal Corp 人工ダイヤモンド皮膜の析出形成方法

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