JPS4990869A - - Google Patents

Info

Publication number
JPS4990869A
JPS4990869A JP13823173A JP13823173A JPS4990869A JP S4990869 A JPS4990869 A JP S4990869A JP 13823173 A JP13823173 A JP 13823173A JP 13823173 A JP13823173 A JP 13823173A JP S4990869 A JPS4990869 A JP S4990869A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13823173A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4990869A publication Critical patent/JPS4990869A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
JP13823173A 1972-12-16 1973-12-13 Pending JPS4990869A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722261757 DE2261757A1 (de) 1972-12-16 1972-12-16 Semitransparente photokathode

Publications (1)

Publication Number Publication Date
JPS4990869A true JPS4990869A (xx) 1974-08-30

Family

ID=5864639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13823173A Pending JPS4990869A (xx) 1972-12-16 1973-12-13

Country Status (3)

Country Link
US (1) US3868523A (xx)
JP (1) JPS4990869A (xx)
DE (1) DE2261757A1 (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008546150A (ja) * 2005-06-01 2008-12-18 インテヴァック インコーポレイテッド 光電陰極構造及び使用方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972770A (en) * 1973-07-23 1976-08-03 International Telephone And Telegraph Corporation Method of preparation of electron emissive materials
US4012760A (en) * 1974-03-18 1977-03-15 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
US4019082A (en) * 1975-03-24 1977-04-19 Rca Corporation Electron emitting device and method of making the same
US4644221A (en) * 1981-05-06 1987-02-17 The United States Of America As Represented By The Secretary Of The Army Variable sensitivity transmission mode negative electron affinity photocathode
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
FR2507386A1 (fr) * 1981-06-03 1982-12-10 Labo Electronique Physique Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage
DE3310303A1 (de) * 1983-03-22 1984-09-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Bildverstaerkervorrichtung
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
US5448084A (en) * 1991-05-24 1995-09-05 Raytheon Company Field effect transistors on spinel substrates
DE69419371T2 (de) * 1993-09-02 1999-12-16 Hamamatsu Photonics Kk Photoemitter, Elektronenröhre, und Photodetektor
US6005257A (en) * 1995-09-13 1999-12-21 Litton Systems, Inc. Transmission mode photocathode with multilayer active layer for night vision and method
US10804428B2 (en) 2018-11-16 2020-10-13 International Business Machines Corporation High efficiency light emitting diode (LED) with low injection current

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE210194C (xx) *

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309553A (en) * 1963-08-16 1967-03-14 Varian Associates Solid state radiation emitters
US3575628A (en) * 1968-11-26 1971-04-20 Westinghouse Electric Corp Transmissive photocathode and devices utilizing the same
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US3667007A (en) * 1970-02-25 1972-05-30 Rca Corp Semiconductor electron emitter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE210194C (xx) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008546150A (ja) * 2005-06-01 2008-12-18 インテヴァック インコーポレイテッド 光電陰極構造及び使用方法

Also Published As

Publication number Publication date
US3868523A (en) 1975-02-25
DE2261757A1 (de) 1974-06-20

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