JPS4987278A - - Google Patents
Info
- Publication number
- JPS4987278A JPS4987278A JP206573A JP206573A JPS4987278A JP S4987278 A JPS4987278 A JP S4987278A JP 206573 A JP206573 A JP 206573A JP 206573 A JP206573 A JP 206573A JP S4987278 A JPS4987278 A JP S4987278A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP206573A JPS5321638B2 (cg-RX-API-DMAC7.html) | 1972-12-23 | 1972-12-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP206573A JPS5321638B2 (cg-RX-API-DMAC7.html) | 1972-12-23 | 1972-12-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4987278A true JPS4987278A (cg-RX-API-DMAC7.html) | 1974-08-21 |
| JPS5321638B2 JPS5321638B2 (cg-RX-API-DMAC7.html) | 1978-07-04 |
Family
ID=11518928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP206573A Expired JPS5321638B2 (cg-RX-API-DMAC7.html) | 1972-12-23 | 1972-12-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5321638B2 (cg-RX-API-DMAC7.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5276890A (en) * | 1975-12-23 | 1977-06-28 | Agency Of Ind Science & Technol | Production of g#a#-a#a# hetero-junction semiconductor device |
| JPS57184229A (en) * | 1981-05-08 | 1982-11-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH02177489A (ja) * | 1988-12-28 | 1990-07-10 | Res Dev Corp Of Japan | 面発光型半導体レーザ装置の製造方法 |
| JPH02188912A (ja) * | 1989-01-17 | 1990-07-25 | Nec Corp | ３‐５族化合物半導体の選択成長方法 |
-
1972
- 1972-12-23 JP JP206573A patent/JPS5321638B2/ja not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5276890A (en) * | 1975-12-23 | 1977-06-28 | Agency Of Ind Science & Technol | Production of g#a#-a#a# hetero-junction semiconductor device |
| JPS57184229A (en) * | 1981-05-08 | 1982-11-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH02177489A (ja) * | 1988-12-28 | 1990-07-10 | Res Dev Corp Of Japan | 面発光型半導体レーザ装置の製造方法 |
| JPH02188912A (ja) * | 1989-01-17 | 1990-07-25 | Nec Corp | ３‐５族化合物半導体の選択成長方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5321638B2 (cg-RX-API-DMAC7.html) | 1978-07-04 |