JPS4984375A - - Google Patents
Info
- Publication number
- JPS4984375A JPS4984375A JP47126866A JP12686672A JPS4984375A JP S4984375 A JPS4984375 A JP S4984375A JP 47126866 A JP47126866 A JP 47126866A JP 12686672 A JP12686672 A JP 12686672A JP S4984375 A JPS4984375 A JP S4984375A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12686672A JPS553826B2 (https=) | 1972-12-18 | 1972-12-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12686672A JPS553826B2 (https=) | 1972-12-18 | 1972-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4984375A true JPS4984375A (https=) | 1974-08-13 |
| JPS553826B2 JPS553826B2 (https=) | 1980-01-26 |
Family
ID=14945761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12686672A Expired JPS553826B2 (https=) | 1972-12-18 | 1972-12-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS553826B2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS556887A (en) * | 1978-06-06 | 1980-01-18 | Gen Electric | Semiconductor having high breakdown voltage |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6002159A (en) * | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
| JP2980573B2 (ja) * | 1997-06-25 | 1999-11-22 | 株式会社東芝 | Ｓｒａ方式のレーダ装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
-
1972
- 1972-12-18 JP JP12686672A patent/JPS553826B2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS556887A (en) * | 1978-06-06 | 1980-01-18 | Gen Electric | Semiconductor having high breakdown voltage |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS553826B2 (https=) | 1980-01-26 |