JPS4984375A - - Google Patents

Info

Publication number
JPS4984375A
JPS4984375A JP47126866A JP12686672A JPS4984375A JP S4984375 A JPS4984375 A JP S4984375A JP 47126866 A JP47126866 A JP 47126866A JP 12686672 A JP12686672 A JP 12686672A JP S4984375 A JPS4984375 A JP S4984375A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47126866A
Other languages
Japanese (ja)
Other versions
JPS553826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12686672A priority Critical patent/JPS553826B2/ja
Publication of JPS4984375A publication Critical patent/JPS4984375A/ja
Publication of JPS553826B2 publication Critical patent/JPS553826B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP12686672A 1972-12-18 1972-12-18 Expired JPS553826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12686672A JPS553826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-12-18 1972-12-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12686672A JPS553826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-12-18 1972-12-18

Publications (2)

Publication Number Publication Date
JPS4984375A true JPS4984375A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-08-13
JPS553826B2 JPS553826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-01-26

Family

ID=14945761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12686672A Expired JPS553826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-12-18 1972-12-18

Country Status (1)

Country Link
JP (1) JPS553826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556887A (en) * 1978-06-06 1980-01-18 Gen Electric Semiconductor having high breakdown voltage

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002159A (en) * 1996-07-16 1999-12-14 Abb Research Ltd. SiC semiconductor device comprising a pn junction with a voltage absorbing edge
JP2980573B2 (ja) * 1997-06-25 1999-11-22 株式会社東芝 Sra方式のレーダ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404295A (en) * 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404295A (en) * 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556887A (en) * 1978-06-06 1980-01-18 Gen Electric Semiconductor having high breakdown voltage

Also Published As

Publication number Publication date
JPS553826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-01-26

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