JPS4978483A - - Google Patents

Info

Publication number
JPS4978483A
JPS4978483A JP12007672A JP12007672A JPS4978483A JP S4978483 A JPS4978483 A JP S4978483A JP 12007672 A JP12007672 A JP 12007672A JP 12007672 A JP12007672 A JP 12007672A JP S4978483 A JPS4978483 A JP S4978483A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12007672A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12007672A priority Critical patent/JPS4978483A/ja
Publication of JPS4978483A publication Critical patent/JPS4978483A/ja
Pending legal-status Critical Current

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Landscapes

  • Formation Of Insulating Films (AREA)
JP12007672A 1972-11-30 1972-11-30 Pending JPS4978483A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12007672A JPS4978483A (ko) 1972-11-30 1972-11-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12007672A JPS4978483A (ko) 1972-11-30 1972-11-30

Publications (1)

Publication Number Publication Date
JPS4978483A true JPS4978483A (ko) 1974-07-29

Family

ID=14777293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12007672A Pending JPS4978483A (ko) 1972-11-30 1972-11-30

Country Status (1)

Country Link
JP (1) JPS4978483A (ko)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029178A (ko) * 1973-07-18 1975-03-25
JPS635534A (ja) * 1986-06-25 1988-01-11 Matsushita Electronics Corp 半導体装置の製造方法
JPS6336573A (ja) * 1986-07-25 1988-02-17 シリコニクス インコ−ポレイテツド 処理選択可能温度係数を持った電流源
JPH07221092A (ja) * 1994-02-09 1995-08-18 Fujitsu Ltd 半導体装置の製造方法
JPH0837183A (ja) * 1995-01-19 1996-02-06 Semiconductor Energy Lab Co Ltd 半導体装置
US6323528B1 (en) 1991-03-06 2001-11-27 Semiconductor Energy Laboratory Co,. Ltd. Semiconductor device
JP2004310123A (ja) * 2004-05-20 2004-11-04 Semiconductor Energy Lab Co Ltd アクティブ型表示装置並びにそれを用いたテレビ、カメラ及びコンピュータ
US7479939B1 (en) 1991-02-16 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2018056352A (ja) * 2016-09-29 2018-04-05 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029178A (ko) * 1973-07-18 1975-03-25
JPS635534A (ja) * 1986-06-25 1988-01-11 Matsushita Electronics Corp 半導体装置の製造方法
JPS6336573A (ja) * 1986-07-25 1988-02-17 シリコニクス インコ−ポレイテツド 処理選択可能温度係数を持った電流源
US7479939B1 (en) 1991-02-16 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6323528B1 (en) 1991-03-06 2001-11-27 Semiconductor Energy Laboratory Co,. Ltd. Semiconductor device
US6822261B2 (en) 1991-03-06 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH07221092A (ja) * 1994-02-09 1995-08-18 Fujitsu Ltd 半導体装置の製造方法
JPH0837183A (ja) * 1995-01-19 1996-02-06 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004310123A (ja) * 2004-05-20 2004-11-04 Semiconductor Energy Lab Co Ltd アクティブ型表示装置並びにそれを用いたテレビ、カメラ及びコンピュータ
JP2018056352A (ja) * 2016-09-29 2018-04-05 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

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