JPS4977174A - - Google Patents

Info

Publication number
JPS4977174A
JPS4977174A JP48122677A JP12267773A JPS4977174A JP S4977174 A JPS4977174 A JP S4977174A JP 48122677 A JP48122677 A JP 48122677A JP 12267773 A JP12267773 A JP 12267773A JP S4977174 A JPS4977174 A JP S4977174A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48122677A
Other languages
Japanese (ja)
Other versions
JPS5815933B2 (ja
Inventor
Alois Schauer
Manfred Roschy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722253490 external-priority patent/DE2253490C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS4977174A publication Critical patent/JPS4977174A/ja
Publication of JPS5815933B2 publication Critical patent/JPS5815933B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006Thin film resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31678Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP48122677A 1972-10-31 1973-10-31 アルミニウム−タンタル合金から成る容量性又は抵抗性薄膜受動素子 Expired JPS5815933B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722253490 DE2253490C3 (de) 1972-10-31 Aluminium-Tantal-Schichten für Dünnschichtschaltungen sowie diskrete Widerstände und Kondensatoren

Publications (2)

Publication Number Publication Date
JPS4977174A true JPS4977174A (US08118993-20120221-C00002.png) 1974-07-25
JPS5815933B2 JPS5815933B2 (ja) 1983-03-28

Family

ID=5860570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48122677A Expired JPS5815933B2 (ja) 1972-10-31 1973-10-31 アルミニウム−タンタル合金から成る容量性又は抵抗性薄膜受動素子

Country Status (15)

Country Link
US (1) US3955039A (US08118993-20120221-C00002.png)
JP (1) JPS5815933B2 (US08118993-20120221-C00002.png)
AT (1) AT341630B (US08118993-20120221-C00002.png)
BE (1) BE806831A (US08118993-20120221-C00002.png)
CH (1) CH559410A5 (US08118993-20120221-C00002.png)
FR (1) FR2204850B1 (US08118993-20120221-C00002.png)
GB (1) GB1398254A (US08118993-20120221-C00002.png)
IN (1) IN142001B (US08118993-20120221-C00002.png)
IT (1) IT998990B (US08118993-20120221-C00002.png)
LU (1) LU67831A1 (US08118993-20120221-C00002.png)
NL (1) NL183111C (US08118993-20120221-C00002.png)
NO (1) NO136126C (US08118993-20120221-C00002.png)
SE (1) SE392360B (US08118993-20120221-C00002.png)
SU (1) SU518166A3 (US08118993-20120221-C00002.png)
YU (1) YU283373A (US08118993-20120221-C00002.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045008A (ja) * 1983-08-22 1985-03-11 松下電器産業株式会社 薄膜コンデンサの製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2546675C3 (de) * 1975-10-17 1979-08-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Dünnschichtschaltung
DE2703636C3 (de) * 1977-01-28 1985-10-10 Siemens AG, 1000 Berlin und 8000 München Regenerierfähiger elektrischer Kondensator und Verfahren zu seiner Herstellung
DE2719988C2 (de) * 1977-05-04 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Amorphe, Tantal enthaltende mindestens bis 300 Grad C temperaturstabile Metallschicht und Verfahren zu ihrer Herstellung
US4671110A (en) * 1984-12-06 1987-06-09 Kock Michiel D De Level sensing device
DE3867120D1 (de) * 1987-04-28 1992-02-06 Yoshida Kogyo Kk Amorphe alluminiumlegierungen.
FR2642891B1 (fr) * 1989-02-03 1993-12-24 Marchal Equip Automobiles Resistance shunt
EP0428730B1 (en) * 1989-02-28 1995-07-12 Canon Kabushiki Kaisha Ink jet head having heat-generating resistor constituted of non-monocrystalline substance containing iridium, tantalum and aluminum, and ink jet device equipped with said head
US5500301A (en) 1991-03-07 1996-03-19 Kabushiki Kaisha Kobe Seiko Sho A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
EP0564998B1 (en) * 1992-04-07 1998-11-04 Koji Hashimoto Amorphous alloys resistant against hot corrosion
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6140909A (en) * 1999-03-23 2000-10-31 Industrial Technology Research Institute Heat-generating resistor and use thereof
US6692586B2 (en) 2001-05-23 2004-02-17 Rolls-Royce Corporation High temperature melting braze materials for bonding niobium based alloys

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3013193A (en) * 1960-01-11 1961-12-12 Battelle Development Corp Compound semiconductor devices
US3627577A (en) * 1968-05-22 1971-12-14 Bell Telephone Labor Inc Thin film resistors
US3737343A (en) * 1971-04-19 1973-06-05 Bell Telephone Labor Inc Technique for the preparation of ion implanted tantalum-aluminum alloy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045008A (ja) * 1983-08-22 1985-03-11 松下電器産業株式会社 薄膜コンデンサの製造方法

Also Published As

Publication number Publication date
BE806831A (fr) 1974-02-15
NL183111C (nl) 1988-07-18
SE392360B (sv) 1977-03-21
FR2204850A1 (US08118993-20120221-C00002.png) 1974-05-24
SU518166A3 (ru) 1976-06-15
FR2204850B1 (US08118993-20120221-C00002.png) 1978-06-23
DE2253490A1 (de) 1974-07-11
JPS5815933B2 (ja) 1983-03-28
YU283373A (en) 1982-06-30
AU6079473A (en) 1975-03-27
IN142001B (US08118993-20120221-C00002.png) 1977-05-14
NO136126C (no) 1977-07-20
ATA889673A (de) 1977-06-15
NO136126B (US08118993-20120221-C00002.png) 1977-04-12
LU67831A1 (US08118993-20120221-C00002.png) 1973-08-28
GB1398254A (en) 1975-06-18
AT341630B (de) 1978-02-27
DE2253490B2 (de) 1975-10-30
US3955039A (en) 1976-05-04
NL7311843A (US08118993-20120221-C00002.png) 1974-05-02
CH559410A5 (US08118993-20120221-C00002.png) 1975-02-28
IT998990B (it) 1976-02-20

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