JPS4973083A - - Google Patents
Info
- Publication number
- JPS4973083A JPS4973083A JP11360772A JP11360772A JPS4973083A JP S4973083 A JPS4973083 A JP S4973083A JP 11360772 A JP11360772 A JP 11360772A JP 11360772 A JP11360772 A JP 11360772A JP S4973083 A JPS4973083 A JP S4973083A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11360772A JPS4973083A (en) | 1972-11-13 | 1972-11-13 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11360772A JPS4973083A (en) | 1972-11-13 | 1972-11-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4973083A true JPS4973083A (en) | 1974-07-15 |
Family
ID=14616490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11360772A Pending JPS4973083A (en) | 1972-11-13 | 1972-11-13 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS4973083A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51126055A (en) * | 1975-04-25 | 1976-11-02 | Hitachi Ltd | Contact part formation method in semi-conductor accumulation circuit |
JPS53108278A (en) * | 1977-11-14 | 1978-09-20 | Nec Corp | Manufacture of semiconductor device |
JP2004335899A (en) * | 2003-05-09 | 2004-11-25 | Denso Corp | Manufacturing method of silicon-carbide semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3609470A (en) * | 1968-02-19 | 1971-09-28 | Ibm | Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum |
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1972
- 1972-11-13 JP JP11360772A patent/JPS4973083A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3609470A (en) * | 1968-02-19 | 1971-09-28 | Ibm | Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51126055A (en) * | 1975-04-25 | 1976-11-02 | Hitachi Ltd | Contact part formation method in semi-conductor accumulation circuit |
JPS53108278A (en) * | 1977-11-14 | 1978-09-20 | Nec Corp | Manufacture of semiconductor device |
JPS5442585B2 (en) * | 1977-11-14 | 1979-12-14 | ||
JP2004335899A (en) * | 2003-05-09 | 2004-11-25 | Denso Corp | Manufacturing method of silicon-carbide semiconductor device |