JPS4973083A - - Google Patents

Info

Publication number
JPS4973083A
JPS4973083A JP11360772A JP11360772A JPS4973083A JP S4973083 A JPS4973083 A JP S4973083A JP 11360772 A JP11360772 A JP 11360772A JP 11360772 A JP11360772 A JP 11360772A JP S4973083 A JPS4973083 A JP S4973083A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11360772A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11360772A priority Critical patent/JPS4973083A/ja
Publication of JPS4973083A publication Critical patent/JPS4973083A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11360772A 1972-11-13 1972-11-13 Pending JPS4973083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11360772A JPS4973083A (en) 1972-11-13 1972-11-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11360772A JPS4973083A (en) 1972-11-13 1972-11-13

Publications (1)

Publication Number Publication Date
JPS4973083A true JPS4973083A (en) 1974-07-15

Family

ID=14616490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11360772A Pending JPS4973083A (en) 1972-11-13 1972-11-13

Country Status (1)

Country Link
JP (1) JPS4973083A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126055A (en) * 1975-04-25 1976-11-02 Hitachi Ltd Contact part formation method in semi-conductor accumulation circuit
JPS53108278A (en) * 1977-11-14 1978-09-20 Nec Corp Manufacture of semiconductor device
JP2004335899A (en) * 2003-05-09 2004-11-25 Denso Corp Manufacturing method of silicon-carbide semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126055A (en) * 1975-04-25 1976-11-02 Hitachi Ltd Contact part formation method in semi-conductor accumulation circuit
JPS53108278A (en) * 1977-11-14 1978-09-20 Nec Corp Manufacture of semiconductor device
JPS5442585B2 (en) * 1977-11-14 1979-12-14
JP2004335899A (en) * 2003-05-09 2004-11-25 Denso Corp Manufacturing method of silicon-carbide semiconductor device

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