JPS4968681A - - Google Patents
Info
- Publication number
- JPS4968681A JPS4968681A JP11029072A JP11029072A JPS4968681A JP S4968681 A JPS4968681 A JP S4968681A JP 11029072 A JP11029072 A JP 11029072A JP 11029072 A JP11029072 A JP 11029072A JP S4968681 A JPS4968681 A JP S4968681A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11029072A JPS4968681A (ja) | 1972-11-06 | 1972-11-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11029072A JPS4968681A (ja) | 1972-11-06 | 1972-11-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4968681A true JPS4968681A (ja) | 1974-07-03 |
Family
ID=14531933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11029072A Pending JPS4968681A (ja) | 1972-11-06 | 1972-11-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4968681A (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5099477A (ja) * | 1973-12-28 | 1975-08-07 | ||
| JPS5377182A (en) * | 1976-12-20 | 1978-07-08 | Fujitsu Ltd | Production of mos type semiconductor device |
| JPS5577173A (en) * | 1978-12-05 | 1980-06-10 | Toshiba Corp | Preparation of insulating gate-type electric field- effective transistor |
| JPS56100473A (en) * | 1980-01-14 | 1981-08-12 | Shunpei Yamazaki | Semiconductor device |
| JPS56100474A (en) * | 1980-01-14 | 1981-08-12 | Shunpei Yamazaki | Semiconductor device |
-
1972
- 1972-11-06 JP JP11029072A patent/JPS4968681A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5099477A (ja) * | 1973-12-28 | 1975-08-07 | ||
| JPS5916420B2 (ja) * | 1973-12-28 | 1984-04-16 | 日本電気株式会社 | 電界効果半導体装置の製造方法 |
| JPS5377182A (en) * | 1976-12-20 | 1978-07-08 | Fujitsu Ltd | Production of mos type semiconductor device |
| JPS5577173A (en) * | 1978-12-05 | 1980-06-10 | Toshiba Corp | Preparation of insulating gate-type electric field- effective transistor |
| JPS56100473A (en) * | 1980-01-14 | 1981-08-12 | Shunpei Yamazaki | Semiconductor device |
| JPS56100474A (en) * | 1980-01-14 | 1981-08-12 | Shunpei Yamazaki | Semiconductor device |