JPS4963381A - - Google Patents

Info

Publication number
JPS4963381A
JPS4963381A JP10511472A JP10511472A JPS4963381A JP S4963381 A JPS4963381 A JP S4963381A JP 10511472 A JP10511472 A JP 10511472A JP 10511472 A JP10511472 A JP 10511472A JP S4963381 A JPS4963381 A JP S4963381A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10511472A
Other languages
Japanese (ja)
Other versions
JPS5342230B2 (tr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10511472A priority Critical patent/JPS5342230B2/ja
Priority to CA183,673A priority patent/CA1012447A/en
Priority to US00407605A priority patent/US3854447A/en
Priority to DE19732352605 priority patent/DE2352605C3/de
Priority to GB4876873A priority patent/GB1451803A/en
Publication of JPS4963381A publication Critical patent/JPS4963381A/ja
Publication of JPS5342230B2 publication Critical patent/JPS5342230B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/065—Multiple stacked slider system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/064—Rotating sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP10511472A 1972-10-19 1972-10-19 Expired JPS5342230B2 (tr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10511472A JPS5342230B2 (tr) 1972-10-19 1972-10-19
CA183,673A CA1012447A (en) 1972-10-19 1973-10-18 Apparatus for deposition of semiconductor thin layers
US00407605A US3854447A (en) 1972-10-19 1973-10-18 Apparatus for deposition of semiconductor thin layers
DE19732352605 DE2352605C3 (de) 1972-10-19 1973-10-19 Aufwachsschiff für Flüssigphasenepitaxie
GB4876873A GB1451803A (en) 1972-10-19 1973-10-19 Apapratus for deposition of semic9nductor thin layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10511472A JPS5342230B2 (tr) 1972-10-19 1972-10-19

Publications (2)

Publication Number Publication Date
JPS4963381A true JPS4963381A (tr) 1974-06-19
JPS5342230B2 JPS5342230B2 (tr) 1978-11-09

Family

ID=14398792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10511472A Expired JPS5342230B2 (tr) 1972-10-19 1972-10-19

Country Status (4)

Country Link
US (1) US3854447A (tr)
JP (1) JPS5342230B2 (tr)
CA (1) CA1012447A (tr)
GB (1) GB1451803A (tr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129384A (ja) * 1974-09-06 1976-03-12 Oki Electric Ind Co Ltd Ekisoepitakisharuseichoho
JPS51131270A (en) * 1975-05-09 1976-11-15 Matsushita Electric Ind Co Ltd Semi-conductor manufacturing unit
JPS5384459A (en) * 1976-12-29 1978-07-25 Fujitsu Ltd Liquid-phase epitaxial growth device
JPS55137381U (tr) * 1979-03-22 1980-09-30

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1019827A (en) * 1973-10-26 1977-10-25 Tatsuro Beppu Method of manufacturing a gallium phosphide light-emitting device
FR2251369B1 (tr) * 1973-11-15 1978-02-10 Radiotechnique Compelec
JPS50110570A (tr) * 1974-02-07 1975-08-30
JPS50119566A (tr) * 1974-03-01 1975-09-19
FR2296264A1 (fr) * 1974-12-24 1976-07-23 Radiotechnique Compelec Procede de realisation de dispositif semi-conducteur a heterojonction
US4088514A (en) * 1975-04-17 1978-05-09 Matsushita Electric Industrial Co., Ltd. Method for epitaxial growth of thin semiconductor layer from solution
US4026240A (en) * 1975-11-17 1977-05-31 Hewlett-Packard Company Liquid phase epitaxial reactor apparatus
DE2730358C3 (de) * 1977-07-05 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie
US4160682A (en) * 1978-03-30 1979-07-10 Western Electric Co., Inc. Depositing materials on stacked semiconductor wafers
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
US4412502A (en) * 1981-06-25 1983-11-01 Western Electric Co., Inc. Apparatus for the elimination of edge growth in liquid phase epitaxy
US4390379A (en) * 1981-06-25 1983-06-28 Western Electric Company, Inc. Elimination of edge growth in liquid phase epitaxy
US4384398A (en) * 1981-10-26 1983-05-24 Bell Telephone Laboratories, Incorporated Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600341A (tr) * 1968-12-31 1970-07-20

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3765959A (en) * 1971-07-30 1973-10-16 Tokyo Shibaura Electric Co Method for the liquid phase epitaxial growth of semiconductor crystals
BE791927A (fr) * 1971-11-29 1973-03-16 Western Electric Co Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600341A (tr) * 1968-12-31 1970-07-20

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129384A (ja) * 1974-09-06 1976-03-12 Oki Electric Ind Co Ltd Ekisoepitakisharuseichoho
JPS51131270A (en) * 1975-05-09 1976-11-15 Matsushita Electric Ind Co Ltd Semi-conductor manufacturing unit
JPS5384459A (en) * 1976-12-29 1978-07-25 Fujitsu Ltd Liquid-phase epitaxial growth device
JPS55137381U (tr) * 1979-03-22 1980-09-30

Also Published As

Publication number Publication date
US3854447A (en) 1974-12-17
DE2352605B2 (de) 1976-09-09
DE2352605A1 (de) 1974-05-09
GB1451803A (en) 1976-10-06
CA1012447A (en) 1977-06-21
JPS5342230B2 (tr) 1978-11-09

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