JPS494976A - - Google Patents
Info
- Publication number
- JPS494976A JPS494976A JP2913773A JP2913773A JPS494976A JP S494976 A JPS494976 A JP S494976A JP 2913773 A JP2913773 A JP 2913773A JP 2913773 A JP2913773 A JP 2913773A JP S494976 A JPS494976 A JP S494976A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722212295 DE2212295C3 (de) | 1972-03-14 | 1972-03-14 | Verfahren zur Herstellung von Silicium- oder Germanium-Epitaxialschichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS494976A true JPS494976A (en:Method) | 1974-01-17 |
| JPS5626137B2 JPS5626137B2 (en:Method) | 1981-06-17 |
Family
ID=5838865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2913773A Expired JPS5626137B2 (en:Method) | 1972-03-14 | 1973-03-14 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5626137B2 (en:Method) |
| BE (1) | BE796757A (en:Method) |
| DE (1) | DE2212295C3 (en:Method) |
| FR (1) | FR2175840B1 (en:Method) |
| GB (1) | GB1386900A (en:Method) |
| IT (1) | IT981333B (en:Method) |
| LU (1) | LU67197A1 (en:Method) |
| NL (1) | NL7302014A (en:Method) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4477308A (en) * | 1982-09-30 | 1984-10-16 | At&T Bell Laboratories | Heteroepitaxy of multiconstituent material by means of a _template layer |
| US7041170B2 (en) | 1999-09-20 | 2006-05-09 | Amberwave Systems Corporation | Method of producing high quality relaxed silicon germanium layers |
| JP4954448B2 (ja) | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 有機金属化合物 |
| JP4689969B2 (ja) | 2003-04-05 | 2011-06-01 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | Ｉｖａ族およびｖｉａ族化合物の調製 |
| JP4714422B2 (ja) | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
-
1972
- 1972-03-14 DE DE19722212295 patent/DE2212295C3/de not_active Expired
-
1973
- 1973-01-15 GB GB201073A patent/GB1386900A/en not_active Expired
- 1973-02-13 NL NL7302014A patent/NL7302014A/xx unknown
- 1973-03-09 FR FR7308479A patent/FR2175840B1/fr not_active Expired
- 1973-03-12 LU LU67197D patent/LU67197A1/xx unknown
- 1973-03-13 IT IT2151973A patent/IT981333B/it active
- 1973-03-14 JP JP2913773A patent/JPS5626137B2/ja not_active Expired
- 1973-03-14 BE BE128783A patent/BE796757A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1386900A (en) | 1975-03-12 |
| FR2175840A1 (en:Method) | 1973-10-26 |
| FR2175840B1 (en:Method) | 1977-07-29 |
| DE2212295C3 (de) | 1975-04-17 |
| LU67197A1 (en:Method) | 1973-05-22 |
| IT981333B (it) | 1974-10-10 |
| DE2212295B2 (de) | 1974-08-15 |
| NL7302014A (en:Method) | 1973-09-18 |
| BE796757A (fr) | 1973-07-02 |
| JPS5626137B2 (en:Method) | 1981-06-17 |
| DE2212295A1 (de) | 1973-09-27 |