JPS4949310B1 - - Google Patents

Info

Publication number
JPS4949310B1
JPS4949310B1 JP44076297A JP7629769A JPS4949310B1 JP S4949310 B1 JPS4949310 B1 JP S4949310B1 JP 44076297 A JP44076297 A JP 44076297A JP 7629769 A JP7629769 A JP 7629769A JP S4949310 B1 JPS4949310 B1 JP S4949310B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44076297A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4949310B1 publication Critical patent/JPS4949310B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/54—Accessories
    • G03B21/64—Means for mounting individual pictures to be projected, e.g. frame for transparency
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP44076297A 1968-09-27 1969-09-26 Pending JPS4949310B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76314768A 1968-09-27 1968-09-27

Publications (1)

Publication Number Publication Date
JPS4949310B1 true JPS4949310B1 (fr) 1974-12-26

Family

ID=25067001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44076297A Pending JPS4949310B1 (fr) 1968-09-27 1969-09-26

Country Status (5)

Country Link
US (1) US3619282A (fr)
JP (1) JPS4949310B1 (fr)
CA (1) CA918548A (fr)
FR (1) FR2018988A1 (fr)
GB (1) GB1282168A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS512828A (fr) * 1974-06-26 1976-01-10 Matsushita Electric Ind Co Ltd
JPS51132318A (en) * 1975-03-10 1976-11-17 Texas Instruments Inc Fuel intake apparatus and automatic control heater for internal combustion engine
JPS5541505U (fr) * 1978-09-08 1980-03-17
JPS5954739U (ja) * 1982-10-01 1984-04-10 トヨタ自動車株式会社 内燃機関の吸気加熱装置
JPS60122263A (ja) * 1976-09-09 1985-06-29 テキサス　インスツルメンツ　インコ−ポレイテツド 気化装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779803A (en) * 1969-11-17 1973-12-18 Ibm Infrared sensitive semiconductor device and method of manufacture
US3884788A (en) * 1973-08-30 1975-05-20 Honeywell Inc Substrate preparation for liquid phase epitaxy of mercury cadmium telluride
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4568397A (en) * 1984-09-12 1986-02-04 Raytheon Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
FR2599558B1 (fr) * 1986-05-27 1988-09-02 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US4950358A (en) * 1986-07-07 1990-08-21 Santa Barbara Research Center Vapor phase epitaxy of semiconductor material in a quasi-open system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1233833B (de) * 1961-03-27 1967-02-09 Philips Nv Verfahren zur Herstellung eines Einkristalls, insbesondere Halbleitereinkristalls
NL279828A (fr) * 1961-07-05
FR1447257A (fr) * 1965-05-25 1966-07-29 Centre Nat Rech Scient Procédé pour effectuer des dépôts de matériaux volatils par croissance cristalline sur des supports solides
US3420704A (en) * 1966-08-19 1969-01-07 Nasa Depositing semiconductor films utilizing a thermal gradient
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS512828A (fr) * 1974-06-26 1976-01-10 Matsushita Electric Ind Co Ltd
JPS51132318A (en) * 1975-03-10 1976-11-17 Texas Instruments Inc Fuel intake apparatus and automatic control heater for internal combustion engine
JPS60122263A (ja) * 1976-09-09 1985-06-29 テキサス　インスツルメンツ　インコ−ポレイテツド 気化装置
JPS5541505U (fr) * 1978-09-08 1980-03-17
JPS5954739U (ja) * 1982-10-01 1984-04-10 トヨタ自動車株式会社 内燃機関の吸気加熱装置

Also Published As

Publication number Publication date
DE1944985B2 (de) 1972-10-26
FR2018988A1 (fr) 1970-06-26
GB1282168A (en) 1972-07-19
DE1944985A1 (de) 1970-05-27
CA918548A (en) 1973-01-09
US3619282A (en) 1971-11-09

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