JPS4942836B1 - - Google Patents
Info
- Publication number
- JPS4942836B1 JPS4942836B1 JP49021335A JP2133574A JPS4942836B1 JP S4942836 B1 JPS4942836 B1 JP S4942836B1 JP 49021335 A JP49021335 A JP 49021335A JP 2133574 A JP2133574 A JP 2133574A JP S4942836 B1 JPS4942836 B1 JP S4942836B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
- H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47045665A | 1965-07-08 | 1965-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4942836B1 true JPS4942836B1 (ja) | 1974-11-16 |
Family
ID=23867698
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49021334A Pending JPS4942835B1 (ja) | 1965-07-08 | 1974-02-22 | |
| JP49021335A Pending JPS4942836B1 (ja) | 1965-07-08 | 1974-02-22 | |
| JP49021336A Pending JPS4942837B1 (ja) | 1965-07-08 | 1974-02-22 | |
| JP51012742A Pending JPS5149194B1 (ja) | 1965-07-08 | 1976-02-07 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49021334A Pending JPS4942835B1 (ja) | 1965-07-08 | 1974-02-22 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49021336A Pending JPS4942837B1 (ja) | 1965-07-08 | 1974-02-22 | |
| JP51012742A Pending JPS5149194B1 (ja) | 1965-07-08 | 1976-02-07 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3615929A (ja) |
| JP (4) | JPS4942835B1 (ja) |
| DE (2) | DE1544324B2 (ja) |
| GB (2) | GB1154891A (ja) |
| SE (1) | SE327014B (ja) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3804681A (en) * | 1967-04-18 | 1974-04-16 | Ibm | Method for making a schottky-barrier field effect transistor |
| GB1250020A (en) * | 1967-12-27 | 1971-10-20 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| USRE28653E (en) * | 1968-04-23 | 1975-12-16 | Method of fabricating semiconductor devices | |
| US3614560A (en) * | 1969-12-30 | 1971-10-19 | Ibm | Improved surface barrier transistor |
| NL170902C (nl) * | 1970-07-10 | 1983-01-03 | Philips Nv | Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
| US3753774A (en) * | 1971-04-05 | 1973-08-21 | Rca Corp | Method for making an intermetallic contact to a semiconductor device |
| US4965652A (en) * | 1971-06-07 | 1990-10-23 | International Business Machines Corporation | Dielectric isolation for high density semiconductor devices |
| US3877051A (en) * | 1972-10-18 | 1975-04-08 | Ibm | Multilayer insulation integrated circuit structure |
| US3959812A (en) * | 1973-02-26 | 1976-05-25 | Hitachi, Ltd. | High-voltage semiconductor integrated circuit |
| US3981072A (en) * | 1973-05-25 | 1976-09-21 | Trw Inc. | Bipolar transistor construction method |
| US3971057A (en) * | 1973-08-21 | 1976-07-20 | The United States Of America As Represented By The Secretary Of The Navy | Lateral photodetector of improved sensitivity |
| US3886580A (en) * | 1973-10-09 | 1975-05-27 | Cutler Hammer Inc | Tantalum-gallium arsenide schottky barrier semiconductor device |
| US3988823A (en) * | 1974-08-26 | 1976-11-02 | Hughes Aircraft Company | Method for fabrication of multilayer interconnected microelectronic devices having small vias therein |
| GB1573309A (en) * | 1976-03-24 | 1980-08-20 | Mullard Ltd | Semiconductor devices and their manufacture |
| US4075650A (en) * | 1976-04-09 | 1978-02-21 | Cutler-Hammer, Inc. | Millimeter wave semiconductor device |
| JPH0697522A (ja) * | 1990-11-30 | 1994-04-08 | Internatl Business Mach Corp <Ibm> | 超伝導材料の薄膜の製造方法 |
| US6750091B1 (en) | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
| FR2815472B1 (fr) * | 2000-10-13 | 2003-03-21 | St Microelectronics Sa | Diac planar |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3105159A (en) * | 1961-08-16 | 1963-09-24 | Rca Corp | Pulse circuits |
| US3463975A (en) * | 1964-12-31 | 1969-08-26 | Texas Instruments Inc | Unitary semiconductor high speed switching device utilizing a barrier diode |
-
1965
- 1965-07-08 US US470456A patent/US3615929A/en not_active Expired - Lifetime
-
1966
- 1966-07-06 GB GB30365/66A patent/GB1154891A/en not_active Expired
- 1966-07-06 GB GB56041/68A patent/GB1154892A/en not_active Expired
- 1966-07-08 DE DE19661544324 patent/DE1544324B2/de active Pending
- 1966-07-08 DE DE19661794320 patent/DE1794320A1/de active Pending
- 1966-07-08 SE SE09410/66A patent/SE327014B/xx unknown
-
1974
- 1974-02-22 JP JP49021334A patent/JPS4942835B1/ja active Pending
- 1974-02-22 JP JP49021335A patent/JPS4942836B1/ja active Pending
- 1974-02-22 JP JP49021336A patent/JPS4942837B1/ja active Pending
-
1976
- 1976-02-07 JP JP51012742A patent/JPS5149194B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5149194B1 (ja) | 1976-12-24 |
| US3615929A (en) | 1971-10-26 |
| SE327014B (ja) | 1970-08-10 |
| GB1154891A (en) | 1969-06-11 |
| DE1794320A1 (de) | 1971-10-07 |
| DE1544324A1 (de) | 1970-12-17 |
| JPS4942837B1 (ja) | 1974-11-16 |
| DE1544324B2 (de) | 1971-07-22 |
| JPS4942835B1 (ja) | 1974-11-16 |
| GB1154892A (en) | 1969-06-11 |