JPS4936790B1 - - Google Patents

Info

Publication number
JPS4936790B1
JPS4936790B1 JP45109644A JP10964470A JPS4936790B1 JP S4936790 B1 JPS4936790 B1 JP S4936790B1 JP 45109644 A JP45109644 A JP 45109644A JP 10964470 A JP10964470 A JP 10964470A JP S4936790 B1 JPS4936790 B1 JP S4936790B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45109644A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4936790B1 publication Critical patent/JPS4936790B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP45109644A 1970-01-28 1970-12-11 Pending JPS4936790B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US649370A 1970-01-28 1970-01-28

Publications (1)

Publication Number Publication Date
JPS4936790B1 true JPS4936790B1 (OSRAM) 1974-10-03

Family

ID=21721155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45109644A Pending JPS4936790B1 (OSRAM) 1970-01-28 1970-12-11

Country Status (6)

Country Link
US (1) US3621346A (OSRAM)
JP (1) JPS4936790B1 (OSRAM)
CA (1) CA925223A (OSRAM)
DE (1) DE2059506C2 (OSRAM)
FR (1) FR2077371B1 (OSRAM)
GB (1) GB1325082A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936797U (OSRAM) * 1972-06-28 1974-04-01

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
DE2429957B2 (de) * 1974-06-21 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines bestimmten Leitungstyps in einem Halbleiterkörper
US4210470A (en) * 1979-03-05 1980-07-01 International Business Machines Corporation Epitaxial tunnels from intersecting growth planes
US4178197A (en) * 1979-03-05 1979-12-11 International Business Machines Corporation Formation of epitaxial tunnels utilizing oriented growth techniques

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316130A (en) * 1963-05-07 1967-04-25 Gen Electric Epitaxial growth of semiconductor devices
US3475661A (en) * 1966-02-09 1969-10-28 Sony Corp Semiconductor device including polycrystalline areas among monocrystalline areas
US3433684A (en) * 1966-09-13 1969-03-18 North American Rockwell Multilayer semiconductor heteroepitaxial structure
US3681668A (en) * 1967-11-14 1972-08-01 Sony Corp Semiconductor device and a method of making the same
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936797U (OSRAM) * 1972-06-28 1974-04-01

Also Published As

Publication number Publication date
FR2077371B1 (OSRAM) 1974-03-22
DE2059506C2 (de) 1983-02-24
DE2059506A1 (de) 1971-08-05
FR2077371A1 (OSRAM) 1971-10-22
CA925223A (en) 1973-04-24
GB1325082A (en) 1973-08-01
US3621346A (en) 1971-11-16

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