JPS4935026B1 - - Google Patents

Info

Publication number
JPS4935026B1
JPS4935026B1 JP46076410A JP7641071A JPS4935026B1 JP S4935026 B1 JPS4935026 B1 JP S4935026B1 JP 46076410 A JP46076410 A JP 46076410A JP 7641071 A JP7641071 A JP 7641071A JP S4935026 B1 JPS4935026 B1 JP S4935026B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46076410A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4935026B1 publication Critical patent/JPS4935026B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H01L23/4855—Overhang structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
JP46076410A 1970-10-01 1971-10-01 Pending JPS4935026B1 (US20100268047A1-20101021-C00003.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7711770A 1970-10-01 1970-10-01

Publications (1)

Publication Number Publication Date
JPS4935026B1 true JPS4935026B1 (US20100268047A1-20101021-C00003.png) 1974-09-19

Family

ID=22136162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46076410A Pending JPS4935026B1 (US20100268047A1-20101021-C00003.png) 1970-10-01 1971-10-01

Country Status (2)

Country Link
US (1) US3675313A (US20100268047A1-20101021-C00003.png)
JP (1) JPS4935026B1 (US20100268047A1-20101021-C00003.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51137131A (en) * 1975-05-23 1976-11-26 Hitachi Ltd Butterfly valve
JPS63135066U (US20100268047A1-20101021-C00003.png) * 1987-02-26 1988-09-05

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2120388A1 (de) * 1970-04-28 1971-12-16 Agency Ind Science Techn Verbindungshalbleitervorrichtung
US3837907A (en) * 1972-03-22 1974-09-24 Bell Telephone Labor Inc Multiple-level metallization for integrated circuits
US3808058A (en) * 1972-08-17 1974-04-30 Bell Telephone Labor Inc Fabrication of mesa diode with channel guard
US3920861A (en) * 1972-12-18 1975-11-18 Rca Corp Method of making a semiconductor device
US3855690A (en) * 1972-12-26 1974-12-24 Westinghouse Electric Corp Application of facet-growth to self-aligned schottky barrier gate field effect transistors
US3994758A (en) * 1973-03-19 1976-11-30 Nippon Electric Company, Ltd. Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
US3956527A (en) * 1973-04-16 1976-05-11 Ibm Corporation Dielectrically isolated Schottky Barrier structure and method of forming the same
US3942186A (en) * 1973-10-09 1976-03-02 Westinghouse Electric Corporation High frequency, field-effect transistor
US4106044A (en) * 1974-03-16 1978-08-08 Nippon Gakki Seizo Kabushiki Kaisha Field effect transistor having unsaturated characteristics
US4092660A (en) * 1974-09-16 1978-05-30 Texas Instruments Incorporated High power field effect transistor
US3926695A (en) * 1974-12-27 1975-12-16 Itt Etched silicon washed emitter process
DE2529598C3 (de) * 1975-07-02 1978-05-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren
US4040168A (en) * 1975-11-24 1977-08-09 Rca Corporation Fabrication method for a dual gate field-effect transistor
US4265934A (en) * 1975-12-12 1981-05-05 Hughes Aircraft Company Method for making improved Schottky-barrier gate gallium arsenide field effect devices
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor
JPS5370688A (en) * 1976-12-06 1978-06-23 Toshiba Corp Production of semoconductor device
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
CA1188822A (en) * 1981-07-31 1985-06-11 John C. White Method for producing a misfet and a misfet produced thereby
FR2558647B1 (fr) * 1984-01-23 1986-05-09 Labo Electronique Physique Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
US4895810A (en) * 1986-03-21 1990-01-23 Advanced Power Technology, Inc. Iopographic pattern delineated power mosfet with profile tailored recessed source
KR920009718B1 (ko) * 1987-08-10 1992-10-22 스미도모덴기고오교오 가부시기가이샤 화합물반도체장치 및 그 제조방법
US5248893A (en) * 1990-02-26 1993-09-28 Advanced Micro Devices, Inc. Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone
US5357397A (en) * 1993-03-15 1994-10-18 Hewlett-Packard Company Electric field emitter device for electrostatic discharge protection of integrated circuits
JP3288246B2 (ja) * 1997-03-24 2002-06-04 日本電気株式会社 半導体装置および半導体装置の製造方法
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
US10276698B2 (en) 2015-10-21 2019-04-30 International Business Machines Corporation Scalable process for the formation of self aligned, planar electrodes for devices employing one or two dimensional lattice structures

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3193418A (en) * 1960-10-27 1965-07-06 Fairchild Camera Instr Co Semiconductor device fabrication
DE1514673A1 (de) * 1966-01-26 1969-06-19 Siemens Ag Verfahren zum Herstellen eines Transistors
US3519504A (en) * 1967-01-13 1970-07-07 Ibm Method for etching silicon nitride films with sharp edge definition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51137131A (en) * 1975-05-23 1976-11-26 Hitachi Ltd Butterfly valve
JPS63135066U (US20100268047A1-20101021-C00003.png) * 1987-02-26 1988-09-05

Also Published As

Publication number Publication date
US3675313A (en) 1972-07-11

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