JPS4935025B1 - - Google Patents
Info
- Publication number
- JPS4935025B1 JPS4935025B1 JP46039949A JP3994971A JPS4935025B1 JP S4935025 B1 JPS4935025 B1 JP S4935025B1 JP 46039949 A JP46039949 A JP 46039949A JP 3994971 A JP3994971 A JP 3994971A JP S4935025 B1 JPS4935025 B1 JP S4935025B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4638170A | 1970-06-15 | 1970-06-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4935025B1 true JPS4935025B1 (enExample) | 1974-09-19 |
Family
ID=21943139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP46039949A Pending JPS4935025B1 (enExample) | 1970-06-15 | 1971-06-08 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3657614A (enExample) |
| JP (1) | JPS4935025B1 (enExample) |
| CA (1) | CA921173A (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032948A (en) * | 1970-10-28 | 1977-06-28 | General Electric Company | Surface charge launching apparatus |
| US3766448A (en) * | 1972-02-04 | 1973-10-16 | Gen Instrument Corp | Integrated igfet circuits with increased inversion voltage under metallization runs |
| BE792939A (enExample) * | 1972-04-10 | 1973-04-16 | Rca Corp | |
| US3845327A (en) * | 1972-08-16 | 1974-10-29 | Westinghouse Electric Corp | Counter with memory utilizing mnos memory elements |
| US3877058A (en) * | 1973-12-13 | 1975-04-08 | Westinghouse Electric Corp | Radiation charge transfer memory device |
| NL7406728A (nl) * | 1974-05-20 | 1975-11-24 | Philips Nv | Halfgeleiderinrichting voor het digitaliseren van een elektrisch analoog signaal. |
| JPS5513433B2 (enExample) * | 1974-08-29 | 1980-04-09 | ||
| US4041519A (en) * | 1975-02-10 | 1977-08-09 | Melen Roger D | Low transient effect switching device and method |
| US4090213A (en) * | 1976-06-15 | 1978-05-16 | California Institute Of Technology | Induced junction solar cell and method of fabrication |
| DE2729657A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
| US4328563A (en) * | 1979-01-12 | 1982-05-04 | Mostek Corporation | High density read only memory |
| US4735914A (en) * | 1979-03-28 | 1988-04-05 | Honeywell Inc. | FET for high reverse bias voltage and geometrical design for low on resistance |
| EP0033159B1 (en) * | 1980-01-29 | 1984-05-02 | Nec Corporation | Semiconductor device |
| US4468574A (en) * | 1982-05-03 | 1984-08-28 | General Electric Company | Dual gate CMOS transistor circuits having reduced electrode capacitance |
| US4672423A (en) * | 1982-09-30 | 1987-06-09 | International Business Machines Corporation | Voltage controlled resonant transmission semiconductor device |
| US5108940A (en) * | 1987-12-22 | 1992-04-28 | Siliconix, Inc. | MOS transistor with a charge induced drain extension |
| US5243212A (en) * | 1987-12-22 | 1993-09-07 | Siliconix Incorporated | Transistor with a charge induced drain extension |
| CA1309781C (en) * | 1988-06-21 | 1992-11-03 | Colin Harris | Compact cmos analog crosspoint switch matrix |
| GB2224160A (en) * | 1988-10-24 | 1990-04-25 | Marconi Instruments Ltd | Integrated semiconductor circuits |
| US5047361A (en) * | 1989-06-30 | 1991-09-10 | Texas Instruments Incorporated | NMOS transistor having inversion layer source/drain contacts |
| US5264380A (en) * | 1989-12-18 | 1993-11-23 | Motorola, Inc. | Method of making an MOS transistor having improved transconductance and short channel characteristics |
| JPH04241466A (ja) * | 1991-01-16 | 1992-08-28 | Casio Comput Co Ltd | 電界効果型トランジスタ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3564355A (en) * | 1968-02-08 | 1971-02-16 | Sprague Electric Co | Semiconductor device employing a p-n junction between induced p- and n- regions |
-
1970
- 1970-06-15 US US46381A patent/US3657614A/en not_active Expired - Lifetime
-
1971
- 1971-05-05 CA CA112169A patent/CA921173A/en not_active Expired
- 1971-06-08 JP JP46039949A patent/JPS4935025B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA921173A (en) | 1973-02-13 |
| US3657614A (en) | 1972-04-18 |