CA921173A - Mis array utilizing field induced junctions - Google Patents

Mis array utilizing field induced junctions

Info

Publication number
CA921173A
CA921173A CA112169A CA112169A CA921173A CA 921173 A CA921173 A CA 921173A CA 112169 A CA112169 A CA 112169A CA 112169 A CA112169 A CA 112169A CA 921173 A CA921173 A CA 921173A
Authority
CA
Canada
Prior art keywords
field induced
utilizing field
array utilizing
mis
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA112169A
Other languages
English (en)
Inventor
R. Cricchi James
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA921173A publication Critical patent/CA921173A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
CA112169A 1970-06-15 1971-05-05 Mis array utilizing field induced junctions Expired CA921173A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4638170A 1970-06-15 1970-06-15

Publications (1)

Publication Number Publication Date
CA921173A true CA921173A (en) 1973-02-13

Family

ID=21943139

Family Applications (1)

Application Number Title Priority Date Filing Date
CA112169A Expired CA921173A (en) 1970-06-15 1971-05-05 Mis array utilizing field induced junctions

Country Status (3)

Country Link
US (1) US3657614A (enExample)
JP (1) JPS4935025B1 (enExample)
CA (1) CA921173A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032948A (en) * 1970-10-28 1977-06-28 General Electric Company Surface charge launching apparatus
US3766448A (en) * 1972-02-04 1973-10-16 Gen Instrument Corp Integrated igfet circuits with increased inversion voltage under metallization runs
BE792939A (enExample) * 1972-04-10 1973-04-16 Rca Corp
US3845327A (en) * 1972-08-16 1974-10-29 Westinghouse Electric Corp Counter with memory utilizing mnos memory elements
US3877058A (en) * 1973-12-13 1975-04-08 Westinghouse Electric Corp Radiation charge transfer memory device
NL7406728A (nl) * 1974-05-20 1975-11-24 Philips Nv Halfgeleiderinrichting voor het digitaliseren van een elektrisch analoog signaal.
JPS5513433B2 (enExample) * 1974-08-29 1980-04-09
US4041519A (en) * 1975-02-10 1977-08-09 Melen Roger D Low transient effect switching device and method
US4090213A (en) * 1976-06-15 1978-05-16 California Institute Of Technology Induced junction solar cell and method of fabrication
DE2729657A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge
US4328563A (en) * 1979-01-12 1982-05-04 Mostek Corporation High density read only memory
US4735914A (en) * 1979-03-28 1988-04-05 Honeywell Inc. FET for high reverse bias voltage and geometrical design for low on resistance
EP0033159B1 (en) * 1980-01-29 1984-05-02 Nec Corporation Semiconductor device
US4468574A (en) * 1982-05-03 1984-08-28 General Electric Company Dual gate CMOS transistor circuits having reduced electrode capacitance
US4672423A (en) * 1982-09-30 1987-06-09 International Business Machines Corporation Voltage controlled resonant transmission semiconductor device
US5108940A (en) * 1987-12-22 1992-04-28 Siliconix, Inc. MOS transistor with a charge induced drain extension
US5243212A (en) * 1987-12-22 1993-09-07 Siliconix Incorporated Transistor with a charge induced drain extension
CA1309781C (en) * 1988-06-21 1992-11-03 Colin Harris Compact cmos analog crosspoint switch matrix
GB2224160A (en) * 1988-10-24 1990-04-25 Marconi Instruments Ltd Integrated semiconductor circuits
US5047361A (en) * 1989-06-30 1991-09-10 Texas Instruments Incorporated NMOS transistor having inversion layer source/drain contacts
US5264380A (en) * 1989-12-18 1993-11-23 Motorola, Inc. Method of making an MOS transistor having improved transconductance and short channel characteristics
JPH04241466A (ja) * 1991-01-16 1992-08-28 Casio Comput Co Ltd 電界効果型トランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3564355A (en) * 1968-02-08 1971-02-16 Sprague Electric Co Semiconductor device employing a p-n junction between induced p- and n- regions

Also Published As

Publication number Publication date
JPS4935025B1 (enExample) 1974-09-19
US3657614A (en) 1972-04-18

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