JPS4928270A - - Google Patents

Info

Publication number
JPS4928270A
JPS4928270A JP6839872A JP6839872A JPS4928270A JP S4928270 A JPS4928270 A JP S4928270A JP 6839872 A JP6839872 A JP 6839872A JP 6839872 A JP6839872 A JP 6839872A JP S4928270 A JPS4928270 A JP S4928270A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6839872A
Other languages
Japanese (ja)
Other versions
JPS523775B2 (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6839872A priority Critical patent/JPS523775B2/ja
Priority to GB3238173A priority patent/GB1398940A/en
Priority to DE19732334658 priority patent/DE2334658C3/de
Priority to FR7325121A priority patent/FR2192378B1/fr
Publication of JPS4928270A publication Critical patent/JPS4928270A/ja
Publication of JPS523775B2 publication Critical patent/JPS523775B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Dicing (AREA)
JP6839872A 1972-07-08 1972-07-08 Expired JPS523775B2 (cg-RX-API-DMAC7.html)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6839872A JPS523775B2 (cg-RX-API-DMAC7.html) 1972-07-08 1972-07-08
GB3238173A GB1398940A (en) 1972-07-08 1973-07-06 Method of dividing semiconductor wafers
DE19732334658 DE2334658C3 (de) 1972-07-08 1973-07-07 Verfahren zum Zerteilen von Halbleiterscheiben
FR7325121A FR2192378B1 (cg-RX-API-DMAC7.html) 1972-07-08 1973-07-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6839872A JPS523775B2 (cg-RX-API-DMAC7.html) 1972-07-08 1972-07-08

Publications (2)

Publication Number Publication Date
JPS4928270A true JPS4928270A (cg-RX-API-DMAC7.html) 1974-03-13
JPS523775B2 JPS523775B2 (cg-RX-API-DMAC7.html) 1977-01-29

Family

ID=13372538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6839872A Expired JPS523775B2 (cg-RX-API-DMAC7.html) 1972-07-08 1972-07-08

Country Status (4)

Country Link
JP (1) JPS523775B2 (cg-RX-API-DMAC7.html)
DE (1) DE2334658C3 (cg-RX-API-DMAC7.html)
FR (1) FR2192378B1 (cg-RX-API-DMAC7.html)
GB (1) GB1398940A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102046A (ja) * 1984-10-25 1986-05-20 Nec Corp 半導体装置の製造方法
JP2019220581A (ja) * 2018-06-20 2019-12-26 株式会社ディスコ チップの製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642127B2 (en) * 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
CN103341692A (zh) 2013-06-26 2013-10-09 京东方科技集团股份有限公司 切割不规则图形基板的方法和显示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102046A (ja) * 1984-10-25 1986-05-20 Nec Corp 半導体装置の製造方法
JP2019220581A (ja) * 2018-06-20 2019-12-26 株式会社ディスコ チップの製造方法

Also Published As

Publication number Publication date
FR2192378B1 (cg-RX-API-DMAC7.html) 1977-09-02
DE2334658C3 (de) 1978-11-23
GB1398940A (en) 1975-06-25
FR2192378A1 (cg-RX-API-DMAC7.html) 1974-02-08
JPS523775B2 (cg-RX-API-DMAC7.html) 1977-01-29
DE2334658A1 (de) 1974-01-24
DE2334658B2 (de) 1978-03-30

Similar Documents

Publication Publication Date Title
FR2184497A1 (cg-RX-API-DMAC7.html)
FR2192378B1 (cg-RX-API-DMAC7.html)
JPS4881288A (cg-RX-API-DMAC7.html)
JPS4881358A (cg-RX-API-DMAC7.html)
JPS5222008B2 (cg-RX-API-DMAC7.html)
JPS4980287U (cg-RX-API-DMAC7.html)
CH571650A5 (cg-RX-API-DMAC7.html)
CH570525A5 (cg-RX-API-DMAC7.html)
BG18198A1 (cg-RX-API-DMAC7.html)
BG18194A1 (cg-RX-API-DMAC7.html)
BG18222A1 (cg-RX-API-DMAC7.html)
CH560843A5 (cg-RX-API-DMAC7.html)
DD109497A5 (cg-RX-API-DMAC7.html)
BG18163A1 (cg-RX-API-DMAC7.html)
CH577423A5 (cg-RX-API-DMAC7.html)
CH575381A5 (cg-RX-API-DMAC7.html)
BE787388A (cg-RX-API-DMAC7.html)
CH574951A5 (cg-RX-API-DMAC7.html)
CH574336A5 (cg-RX-API-DMAC7.html)
CH571985A5 (cg-RX-API-DMAC7.html)
AU480708A (cg-RX-API-DMAC7.html)
CH561670A5 (cg-RX-API-DMAC7.html)
CH571289A5 (cg-RX-API-DMAC7.html)
CH570781A5 (cg-RX-API-DMAC7.html)
BG18315A1 (cg-RX-API-DMAC7.html)