JPS4922386A - - Google Patents
Info
- Publication number
- JPS4922386A JPS4922386A JP6206972A JP6206972A JPS4922386A JP S4922386 A JPS4922386 A JP S4922386A JP 6206972 A JP6206972 A JP 6206972A JP 6206972 A JP6206972 A JP 6206972A JP S4922386 A JPS4922386 A JP S4922386A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6206972A JPS4922386A (enExample) | 1972-06-21 | 1972-06-21 | |
| US331494A US3900585A (en) | 1972-02-12 | 1973-02-12 | Method for control of ionization electrostatic plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6206972A JPS4922386A (enExample) | 1972-06-21 | 1972-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4922386A true JPS4922386A (enExample) | 1974-02-27 |
Family
ID=13189423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6206972A Pending JPS4922386A (enExample) | 1972-02-12 | 1972-06-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4922386A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5247535U (enExample) * | 1975-09-30 | 1977-04-04 | ||
| JPS61235578A (ja) * | 1986-01-06 | 1986-10-20 | Semiconductor Energy Lab Co Ltd | 反応炉内を清浄にする方法 |
| JPH06331516A (ja) * | 1993-05-24 | 1994-12-02 | Akira Tanaka | 直流グロー放電による金属被膜の堆積法 |
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1972
- 1972-06-21 JP JP6206972A patent/JPS4922386A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5247535U (enExample) * | 1975-09-30 | 1977-04-04 | ||
| JPS61235578A (ja) * | 1986-01-06 | 1986-10-20 | Semiconductor Energy Lab Co Ltd | 反応炉内を清浄にする方法 |
| JPH06331516A (ja) * | 1993-05-24 | 1994-12-02 | Akira Tanaka | 直流グロー放電による金属被膜の堆積法 |