JPS4921990B1 - - Google Patents

Info

Publication number
JPS4921990B1
JPS4921990B1 JP44057701A JP5770169A JPS4921990B1 JP S4921990 B1 JPS4921990 B1 JP S4921990B1 JP 44057701 A JP44057701 A JP 44057701A JP 5770169 A JP5770169 A JP 5770169A JP S4921990 B1 JPS4921990 B1 JP S4921990B1
Authority
JP
Japan
Prior art keywords
crystal
wafer
july
junction
function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44057701A
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP44057701A priority Critical patent/JPS4921990B1/ja
Priority to US56875A priority patent/US3694759A/en
Priority to GB35545/70A priority patent/GB1278349A/en
Publication of JPS4921990B1 publication Critical patent/JPS4921990B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
JP44057701A 1969-07-23 1969-07-23 Pending JPS4921990B1 (https=)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP44057701A JPS4921990B1 (https=) 1969-07-23 1969-07-23
US56875A US3694759A (en) 1969-07-23 1970-07-21 Solid state electronic device using quaternary compound semiconductor material consisting of gallium,indium,phosphor and arsenic
GB35545/70A GB1278349A (en) 1969-07-23 1970-07-22 Solid state electronic device using quaternary compound semiconductor material consisting of galium, indium, phosphorus and arsenic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44057701A JPS4921990B1 (https=) 1969-07-23 1969-07-23

Publications (1)

Publication Number Publication Date
JPS4921990B1 true JPS4921990B1 (https=) 1974-06-05

Family

ID=13063225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44057701A Pending JPS4921990B1 (https=) 1969-07-23 1969-07-23

Country Status (3)

Country Link
US (1) US3694759A (https=)
JP (1) JPS4921990B1 (https=)
GB (1) GB1278349A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1427209A (en) * 1972-09-22 1976-03-10 Varian Associates Lattice matched heterojunction devices
US3958143A (en) * 1973-01-15 1976-05-18 Varian Associates Long-wavelength photoemission cathode
US3978360A (en) * 1974-12-27 1976-08-31 Nasa III-V photocathode with nitrogen doping for increased quantum efficiency
JP2503130B2 (ja) * 1991-07-29 1996-06-05 信越半導体株式会社 液相成長方法

Also Published As

Publication number Publication date
GB1278349A (en) 1972-06-21
US3694759A (en) 1972-09-26

Similar Documents

Publication Publication Date Title
GB1075247A (en) Solid state radiation emitters
JPS5513907A (en) Avalnche photo diode with semiconductor hetero construction
US3757174A (en) Light emitting four layer semiconductor
GB883468A (en) Improvements in or relating to semi-conductor devices
JPS4921990B1 (https=)
US3504302A (en) Frequency controlled semiconductor junction laser
GB1281409A (en) Solid-state microwave generating device
GB1468578A (en) Microwave transistor circuit
US3921192A (en) Avalanche diode
ES354654A1 (es) Metodo para la difusion de cinc en arseniuro de gelio.
US4410903A (en) Heterojunction-diode transistor EBS amplifier
US3447044A (en) Scanned line radiation source using a reverse biased p-n junction adjacent a gunn diode
Ohnaka et al. A planar InGaAs PIN/JFET fiber-optic detector
US4291320A (en) Heterojunction IMPATT diode
US3740666A (en) Circuit for suppressing the formation of high field domains in an overcritically doped gunn-effect diode
Takakuwa et al. Low-noise HEMT fabricated by MOCVD
Riad et al. Simulation studies in both the frequency and time domains of InGaAsP-InP avalanche photodetectors
GB2178620A (en) Extremely-high frequency semiconductor oscillator using transit time negative resistance diode
Zhang et al. 0.7 W single-drift GaAs IMPATT diodes for millimetre-wave frequencies
Tully et al. Noise performance of a 94-GHz Gunn-effect local oscillator
Minden Gallium arsenide dual Schottky barrier diodes
GB1339564A (en) Semiconductor iii-v material
Gibbons et al. InP pulsed and cw millimetre-wave oscillators
GB1034824A (en) Semiconductor oscillation device
HALLAIS et al. Growth of 3-5 compounds for semiconductor devices by the organometallic method[Final Report]