JPS4921990B1 - - Google Patents

Info

Publication number
JPS4921990B1
JPS4921990B1 JP44057701A JP5770169A JPS4921990B1 JP S4921990 B1 JPS4921990 B1 JP S4921990B1 JP 44057701 A JP44057701 A JP 44057701A JP 5770169 A JP5770169 A JP 5770169A JP S4921990 B1 JPS4921990 B1 JP S4921990B1
Authority
JP
Japan
Prior art keywords
crystal
wafer
july
junction
function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44057701A
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP44057701A priority Critical patent/JPS4921990B1/ja
Priority to US56875A priority patent/US3694759A/en
Priority to GB35545/70A priority patent/GB1278349A/en
Publication of JPS4921990B1 publication Critical patent/JPS4921990B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10P14/24—
    • H10P14/2911—
    • H10P14/3418—
    • H10P14/3421—
    • H10P14/36—
    • H10P14/38—
JP44057701A 1969-07-23 1969-07-23 Pending JPS4921990B1 (enExample)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP44057701A JPS4921990B1 (enExample) 1969-07-23 1969-07-23
US56875A US3694759A (en) 1969-07-23 1970-07-21 Solid state electronic device using quaternary compound semiconductor material consisting of gallium,indium,phosphor and arsenic
GB35545/70A GB1278349A (en) 1969-07-23 1970-07-22 Solid state electronic device using quaternary compound semiconductor material consisting of galium, indium, phosphorus and arsenic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44057701A JPS4921990B1 (enExample) 1969-07-23 1969-07-23

Publications (1)

Publication Number Publication Date
JPS4921990B1 true JPS4921990B1 (enExample) 1974-06-05

Family

ID=13063225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44057701A Pending JPS4921990B1 (enExample) 1969-07-23 1969-07-23

Country Status (3)

Country Link
US (1) US3694759A (enExample)
JP (1) JPS4921990B1 (enExample)
GB (1) GB1278349A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1427209A (en) * 1972-09-22 1976-03-10 Varian Associates Lattice matched heterojunction devices
US3958143A (en) * 1973-01-15 1976-05-18 Varian Associates Long-wavelength photoemission cathode
US3978360A (en) * 1974-12-27 1976-08-31 Nasa III-V photocathode with nitrogen doping for increased quantum efficiency
JP2503130B2 (ja) * 1991-07-29 1996-06-05 信越半導体株式会社 液相成長方法

Also Published As

Publication number Publication date
US3694759A (en) 1972-09-26
GB1278349A (en) 1972-06-21

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