JPS4915371A - - Google Patents

Info

Publication number
JPS4915371A
JPS4915371A JP48033044A JP3304473A JPS4915371A JP S4915371 A JPS4915371 A JP S4915371A JP 48033044 A JP48033044 A JP 48033044A JP 3304473 A JP3304473 A JP 3304473A JP S4915371 A JPS4915371 A JP S4915371A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48033044A
Other languages
Japanese (ja)
Other versions
JPS525230B2 (show.php
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4915371A publication Critical patent/JPS4915371A/ja
Publication of JPS525230B2 publication Critical patent/JPS525230B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/126Preparing bulk and homogeneous wafers by chemical etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/40Alkaline compositions for etching other metallic material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • H10P50/644Anisotropic liquid etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • H10P50/646Chemical etching of Group III-V materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Thyristors (AREA)
JP48033044A 1972-03-23 1973-03-22 Expired JPS525230B2 (show.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2214197A DE2214197C3 (de) 1972-03-23 1972-03-23 Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben

Publications (2)

Publication Number Publication Date
JPS4915371A true JPS4915371A (show.php) 1974-02-09
JPS525230B2 JPS525230B2 (show.php) 1977-02-10

Family

ID=5839938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48033044A Expired JPS525230B2 (show.php) 1972-03-23 1973-03-22

Country Status (11)

Country Link
JP (1) JPS525230B2 (show.php)
AT (1) AT325678B (show.php)
BE (1) BE797244A (show.php)
CH (1) CH575175A5 (show.php)
DE (1) DE2214197C3 (show.php)
ES (1) ES409621A1 (show.php)
FR (1) FR2176664B1 (show.php)
GB (1) GB1362507A (show.php)
IT (1) IT972618B (show.php)
NL (1) NL7217673A (show.php)
SE (1) SE378478B (show.php)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB889872A (en) * 1957-04-24 1962-02-21 Sarkes Tarzian A method of treating a semi-conductor device
FR1266612A (fr) * 1960-06-02 1961-07-17 Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs
NL271850A (show.php) * 1961-02-03
GB980513A (en) * 1961-11-17 1965-01-13 Licentia Gmbh Improvements relating to the use of silicon in semi-conductor devices
DE1621511A1 (de) * 1967-04-01 1970-07-23 Siemens Ag Verfahren zum Entspiegeln von Siliziumeinkristalloberflaechen

Also Published As

Publication number Publication date
ES409621A1 (es) 1975-12-01
AT325678B (de) 1975-11-10
DE2214197B2 (de) 1981-04-23
SE378478B (show.php) 1975-09-01
CH575175A5 (show.php) 1976-04-30
DE2214197A1 (de) 1973-09-27
IT972618B (it) 1974-05-31
JPS525230B2 (show.php) 1977-02-10
ATA1017072A (de) 1975-01-15
FR2176664B1 (show.php) 1977-12-30
BE797244A (fr) 1973-07-16
FR2176664A1 (show.php) 1973-11-02
GB1362507A (en) 1974-08-07
NL7217673A (show.php) 1973-09-25
DE2214197C3 (de) 1982-01-14

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