JPS49130688A - - Google Patents
Info
- Publication number
- JPS49130688A JPS49130688A JP4193173A JP4193173A JPS49130688A JP S49130688 A JPS49130688 A JP S49130688A JP 4193173 A JP4193173 A JP 4193173A JP 4193173 A JP4193173 A JP 4193173A JP S49130688 A JPS49130688 A JP S49130688A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Surface Treatment Of Glass (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4193173A JPS5728947B2 (en) | 1973-04-13 | 1973-04-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4193173A JPS5728947B2 (en) | 1973-04-13 | 1973-04-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49130688A true JPS49130688A (en) | 1974-12-14 |
| JPS5728947B2 JPS5728947B2 (en) | 1982-06-19 |
Family
ID=12621968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4193173A Expired JPS5728947B2 (en) | 1973-04-13 | 1973-04-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5728947B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60137024A (en) * | 1983-12-26 | 1985-07-20 | Matsushita Electronics Corp | Etching method of silicon nitride film |
| US6517738B1 (en) * | 1999-06-29 | 2003-02-11 | Micron Technology, Inc. | Acid blend for removing etch residue |
-
1973
- 1973-04-13 JP JP4193173A patent/JPS5728947B2/ja not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60137024A (en) * | 1983-12-26 | 1985-07-20 | Matsushita Electronics Corp | Etching method of silicon nitride film |
| JPH0322692B2 (en) * | 1983-12-26 | 1991-03-27 | Matsushita Electronics Corp | |
| US6517738B1 (en) * | 1999-06-29 | 2003-02-11 | Micron Technology, Inc. | Acid blend for removing etch residue |
| US7261835B2 (en) | 1999-06-29 | 2007-08-28 | Micron Technology, Inc. | Acid blend for removing etch residue |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5728947B2 (en) | 1982-06-19 |