JPS49124991A - - Google Patents

Info

Publication number
JPS49124991A
JPS49124991A JP49013776A JP1377674A JPS49124991A JP S49124991 A JPS49124991 A JP S49124991A JP 49013776 A JP49013776 A JP 49013776A JP 1377674 A JP1377674 A JP 1377674A JP S49124991 A JPS49124991 A JP S49124991A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49013776A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS49124991A publication Critical patent/JPS49124991A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/159—Strain gauges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
JP49013776A 1973-02-12 1974-02-04 Pending JPS49124991A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00331934A US3853650A (en) 1973-02-12 1973-02-12 Stress sensor diaphragms over recessed substrates

Publications (1)

Publication Number Publication Date
JPS49124991A true JPS49124991A (ja) 1974-11-29

Family

ID=23295981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49013776A Pending JPS49124991A (ja) 1973-02-12 1974-02-04

Country Status (2)

Country Link
US (1) US3853650A (ja)
JP (1) JPS49124991A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080281A (ja) * 1983-10-07 1985-05-08 Sumitomo Electric Ind Ltd 半導体圧力センサ及びその製造方法
JPH0233974A (ja) * 1988-07-22 1990-02-05 Mitsubishi Electric Corp 圧力変換素子の製造方法

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3912563A (en) * 1973-06-05 1975-10-14 Matsushita Electric Ind Co Ltd Method of making semiconductor piezoresistive strain transducer
GB1480592A (en) * 1973-11-02 1977-07-20 Marconi Co Ltd Light emitting diodes
US4021766A (en) * 1975-07-28 1977-05-03 Aine Harry E Solid state pressure transducer of the leaf spring type and batch method of making same
US4054497A (en) * 1975-10-06 1977-10-18 Honeywell Inc. Method for electrolytically etching semiconductor material
US4050049A (en) * 1976-02-09 1977-09-20 Signetics Corporation Solid state force transducer, support and method of making same
US4198263A (en) * 1976-03-30 1980-04-15 Tokyo Shibaura Electric Co., Ltd. Mask for soft X-rays and method of manufacture
US4141621A (en) * 1977-08-05 1979-02-27 Honeywell Inc. Three layer waveguide for thin film lens fabrication
US4204185A (en) * 1977-10-13 1980-05-20 Kulite Semiconductor Products, Inc. Integral transducer assemblies employing thin homogeneous diaphragms
US4332000A (en) * 1980-10-03 1982-05-25 International Business Machines Corporation Capacitive pressure transducer
US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
US4597003A (en) * 1983-12-01 1986-06-24 Harry E. Aine Chemical etching of a semiconductive wafer by undercutting an etch stopped layer
US4744863A (en) * 1985-04-26 1988-05-17 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
JP2659944B2 (ja) * 1985-04-26 1997-09-30 ウィスコンシン アラムニ リサーチ ファンデーション シール型空胴トランスジューサを製造する方法及びシール型空胴トランスジューサ構造体
US4853669A (en) * 1985-04-26 1989-08-01 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4966663A (en) * 1988-09-13 1990-10-30 Nanostructures, Inc. Method for forming a silicon membrane with controlled stress
US4995953A (en) * 1989-10-30 1991-02-26 Motorola, Inc. Method of forming a semiconductor membrane using an electrochemical etch-stop
JP3151816B2 (ja) * 1990-08-06 2001-04-03 日産自動車株式会社 エッチング方法
US5332469A (en) * 1992-11-12 1994-07-26 Ford Motor Company Capacitive surface micromachined differential pressure sensor
US5360521A (en) * 1993-11-12 1994-11-01 Honeywell Inc. Method for etching silicon
US6156585A (en) 1998-02-02 2000-12-05 Motorola, Inc. Semiconductor component and method of manufacture
US6738145B2 (en) 2000-04-14 2004-05-18 Shipley Company, L.L.C. Micromachined, etalon-based optical fiber pressure sensor
US6768590B2 (en) * 2000-05-19 2004-07-27 Shipley Company, L.L.C. Method of fabricating optical filters
FR2809534B1 (fr) * 2000-05-26 2005-01-14 Commissariat Energie Atomique Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
US6498086B1 (en) 2001-07-26 2002-12-24 Intel Corporation Use of membrane properties to reduce residual stress in an interlayer region
EP1480302B1 (en) * 2003-05-23 2007-07-11 Rohm and Haas Electronic Materials, L.L.C. External cavity semiconductor laser comprising an etalon and method for fabrication thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716429A (en) * 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices
DE2037666A1 (de) * 1970-07-29 1972-02-03 Siemens Ag Verfahren zum Kontaktieren eines mit mehreren Elektroden versehenen Halbleiterkörpers mit Hilfe eines aus einem Metallblech hergestellten Systems von elektrischen Zuleitungen
US3757414A (en) * 1971-03-26 1973-09-11 Honeywell Inc Method for batch fabricating semiconductor devices
US3755026A (en) * 1971-04-01 1973-08-28 Sprague Electric Co Method of making a semiconductor device having tunnel oxide contacts
US3758830A (en) * 1972-04-10 1973-09-11 Hewlett Packard Co Transducer formed in peripherally supported thin semiconductor web
US3798754A (en) * 1972-05-15 1974-03-26 Motorola Inc Semiconductor strain gage and method of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080281A (ja) * 1983-10-07 1985-05-08 Sumitomo Electric Ind Ltd 半導体圧力センサ及びその製造方法
JPH0233974A (ja) * 1988-07-22 1990-02-05 Mitsubishi Electric Corp 圧力変換素子の製造方法

Also Published As

Publication number Publication date
US3853650A (en) 1974-12-10

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