JPS4910673A - - Google Patents

Info

Publication number
JPS4910673A
JPS4910673A JP48032559A JP3255973A JPS4910673A JP S4910673 A JPS4910673 A JP S4910673A JP 48032559 A JP48032559 A JP 48032559A JP 3255973 A JP3255973 A JP 3255973A JP S4910673 A JPS4910673 A JP S4910673A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48032559A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4910673A publication Critical patent/JPS4910673A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials

Landscapes

  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Formation Of Insulating Films (AREA)
JP48032559A 1972-04-05 1973-03-20 Pending JPS4910673A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24128472A 1972-04-05 1972-04-05

Publications (1)

Publication Number Publication Date
JPS4910673A true JPS4910673A (OSRAM) 1974-01-30

Family

ID=22910046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48032559A Pending JPS4910673A (OSRAM) 1972-04-05 1973-03-20

Country Status (7)

Country Link
JP (1) JPS4910673A (OSRAM)
CA (1) CA959383A (OSRAM)
DE (1) DE2302264A1 (OSRAM)
FR (1) FR2178859B3 (OSRAM)
GB (1) GB1361357A (OSRAM)
IT (1) IT976934B (OSRAM)
NL (1) NL7303610A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128755A (en) * 1974-09-04 1976-03-11 Nippon Electric Co Handotaisochi no seizohoho

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03198327A (ja) * 1989-12-26 1991-08-29 Fujitsu Ltd 半導体装置の製造方法
CN113307224B (zh) * 2021-05-24 2024-09-17 上海芯物科技有限公司 一种旋转结构的制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128755A (en) * 1974-09-04 1976-03-11 Nippon Electric Co Handotaisochi no seizohoho

Also Published As

Publication number Publication date
IT976934B (it) 1974-09-10
NL7303610A (OSRAM) 1973-10-09
DE2302264A1 (de) 1973-10-25
FR2178859A1 (OSRAM) 1973-11-16
FR2178859B3 (OSRAM) 1976-01-30
CA959383A (en) 1974-12-17
GB1361357A (en) 1974-07-24

Similar Documents

Publication Publication Date Title
FR2202409A1 (OSRAM)
FR2195492A1 (OSRAM)
FR2221689B1 (OSRAM)
CS158170B2 (OSRAM)
CS156922B1 (OSRAM)
JPS4876457A (OSRAM)
FR2178859A1 (OSRAM)
JPS48111674U (OSRAM)
JPS4967651A (OSRAM)
JPS5438849Y2 (OSRAM)
JPS518927Y2 (OSRAM)
CS151840B1 (OSRAM)
CS152690B1 (OSRAM)
JPS48103542A (OSRAM)
JPS48109218U (OSRAM)
JPS48103702U (OSRAM)
JPS4911068A (OSRAM)
CS156987B1 (OSRAM)
CS159448B1 (OSRAM)
JPS4951832A (OSRAM)
CS154024B1 (OSRAM)
CS157934B1 (OSRAM)
CH571663A5 (OSRAM)
CH588722A5 (OSRAM)
CH575946A5 (OSRAM)