JPS49104580A - - Google Patents

Info

Publication number
JPS49104580A
JPS49104580A JP49004382A JP438274A JPS49104580A JP S49104580 A JPS49104580 A JP S49104580A JP 49004382 A JP49004382 A JP 49004382A JP 438274 A JP438274 A JP 438274A JP S49104580 A JPS49104580 A JP S49104580A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49004382A
Other languages
Japanese (ja)
Other versions
JPS5725984B2 (en, 2012
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS49104580A publication Critical patent/JPS49104580A/ja
Publication of JPS5725984B2 publication Critical patent/JPS5725984B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131Thyristors having built-in components
    • H10D84/133Thyristors having built-in components the built-in components being capacitors or resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/211Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/221Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP744382A 1973-01-08 1973-12-25 Expired JPS5725984B2 (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2300754A DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor

Publications (2)

Publication Number Publication Date
JPS49104580A true JPS49104580A (en, 2012) 1974-10-03
JPS5725984B2 JPS5725984B2 (en, 2012) 1982-06-02

Family

ID=5868522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP744382A Expired JPS5725984B2 (en, 2012) 1973-01-08 1973-12-25

Country Status (8)

Country Link
JP (1) JPS5725984B2 (en, 2012)
CH (1) CH566081A5 (en, 2012)
DE (1) DE2300754A1 (en, 2012)
FR (1) FR2213589B1 (en, 2012)
GB (1) GB1417953A (en, 2012)
IT (1) IT1006717B (en, 2012)
NL (1) NL7400189A (en, 2012)
SE (1) SE405527B (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
JPS5718361A (en) * 1980-05-23 1982-01-30 Gen Electric High voltage semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
EP0320738A3 (de) * 1987-12-17 1991-02-06 Siemens Aktiengesellschaft Überkopfzündfester Thyristor
EP0343369A1 (de) * 1988-05-19 1989-11-29 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Thyristors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432733A (en) * 1966-04-22 1969-03-11 Bbc Brown Boveri & Cie Controllable semi-conductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432733A (en) * 1966-04-22 1969-03-11 Bbc Brown Boveri & Cie Controllable semi-conductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
JPS5718361A (en) * 1980-05-23 1982-01-30 Gen Electric High voltage semiconductor device

Also Published As

Publication number Publication date
FR2213589B1 (en, 2012) 1979-04-20
JPS5725984B2 (en, 2012) 1982-06-02
IT1006717B (it) 1976-10-20
NL7400189A (en, 2012) 1974-07-10
CH566081A5 (en, 2012) 1975-08-29
GB1417953A (en) 1975-12-17
FR2213589A1 (en, 2012) 1974-08-02
DE2300754A1 (de) 1974-07-11
SE405527B (sv) 1978-12-11

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