JPS49100979A - - Google Patents
Info
- Publication number
- JPS49100979A JPS49100979A JP1195573A JP1195573A JPS49100979A JP S49100979 A JPS49100979 A JP S49100979A JP 1195573 A JP1195573 A JP 1195573A JP 1195573 A JP1195573 A JP 1195573A JP S49100979 A JPS49100979 A JP S49100979A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195573A JPS49100979A (US06272168-20010807-M00014.png) | 1973-01-31 | 1973-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195573A JPS49100979A (US06272168-20010807-M00014.png) | 1973-01-31 | 1973-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS49100979A true JPS49100979A (US06272168-20010807-M00014.png) | 1974-09-24 |
Family
ID=11792031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1195573A Pending JPS49100979A (US06272168-20010807-M00014.png) | 1973-01-31 | 1973-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS49100979A (US06272168-20010807-M00014.png) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51109778U (US06272168-20010807-M00014.png) * | 1975-02-28 | 1976-09-04 | ||
| JPS51141582A (en) * | 1975-05-30 | 1976-12-06 | Sharp Corp | Field effect transistor with high withstand voltage |
| JPS51151083A (en) * | 1975-06-20 | 1976-12-25 | Sharp Corp | High withstand voltage electric field effect semiconductor apparatus |
| JPS58151052A (ja) * | 1982-03-02 | 1983-09-08 | Toshiba Corp | Ｍｏｓ型半導体装置 |
| JPS59119045U (ja) * | 1983-01-28 | 1984-08-11 | シャープ株式会社 | 高出力高周波トランジスタ |
| JPS59119046U (ja) * | 1983-01-31 | 1984-08-11 | シャープ株式会社 | 高出力高周波トランジスタ |
| JPS59119047U (ja) * | 1983-01-31 | 1984-08-11 | シャープ株式会社 | 高出力高周波トランジスタ |
| JPH02194560A (ja) * | 1989-01-23 | 1990-08-01 | Oki Electric Ind Co Ltd | 半導体装置 |
| JP2007084110A (ja) * | 2005-09-22 | 2007-04-05 | Sun Wave Ind Co Ltd | 養生スタンド |
-
1973
- 1973-01-31 JP JP1195573A patent/JPS49100979A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51109778U (US06272168-20010807-M00014.png) * | 1975-02-28 | 1976-09-04 | ||
| JPS5745549Y2 (US06272168-20010807-M00014.png) * | 1975-02-28 | 1982-10-07 | ||
| JPS51141582A (en) * | 1975-05-30 | 1976-12-06 | Sharp Corp | Field effect transistor with high withstand voltage |
| JPS51151083A (en) * | 1975-06-20 | 1976-12-25 | Sharp Corp | High withstand voltage electric field effect semiconductor apparatus |
| JPS58151052A (ja) * | 1982-03-02 | 1983-09-08 | Toshiba Corp | Ｍｏｓ型半導体装置 |
| JPS59119045U (ja) * | 1983-01-28 | 1984-08-11 | シャープ株式会社 | 高出力高周波トランジスタ |
| JPH051083Y2 (US06272168-20010807-M00014.png) * | 1983-01-28 | 1993-01-12 | ||
| JPS59119046U (ja) * | 1983-01-31 | 1984-08-11 | シャープ株式会社 | 高出力高周波トランジスタ |
| JPS59119047U (ja) * | 1983-01-31 | 1984-08-11 | シャープ株式会社 | 高出力高周波トランジスタ |
| JPH051084Y2 (US06272168-20010807-M00014.png) * | 1983-01-31 | 1993-01-12 | ||
| JPH02194560A (ja) * | 1989-01-23 | 1990-08-01 | Oki Electric Ind Co Ltd | 半導体装置 |
| JP2007084110A (ja) * | 2005-09-22 | 2007-04-05 | Sun Wave Ind Co Ltd | 養生スタンド |
