JPS4886546A - - Google Patents

Info

Publication number
JPS4886546A
JPS4886546A JP1752573A JP1752573A JPS4886546A JP S4886546 A JPS4886546 A JP S4886546A JP 1752573 A JP1752573 A JP 1752573A JP 1752573 A JP1752573 A JP 1752573A JP S4886546 A JPS4886546 A JP S4886546A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1752573A
Other versions
JPS5234352B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4886546A publication Critical patent/JPS4886546A/ja
Publication of JPS5234352B2 publication Critical patent/JPS5234352B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664Vertical bipolar transistor in combination with diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
JP1752573A 1972-02-14 1973-02-14 Expired JPS5234352B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22589672A 1972-02-14 1972-02-14
US00408033A US3836793A (en) 1972-02-14 1973-10-19 Photon isolator with improved photodetector transistor stage
US475216A US3925801A (en) 1972-02-14 1974-05-31 Photon isolator with improved photodetector transistor stage

Publications (2)

Publication Number Publication Date
JPS4886546A true JPS4886546A (ja) 1973-11-15
JPS5234352B2 JPS5234352B2 (ja) 1977-09-02

Family

ID=27397537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1752573A Expired JPS5234352B2 (ja) 1972-02-14 1973-02-14

Country Status (3)

Country Link
US (2) US3836793A (ja)
JP (1) JPS5234352B2 (ja)
GB (1) GB1423779A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394783A (en) * 1976-12-29 1978-08-19 Fujitsu Ltd Photo coupler
JPS53129990A (en) * 1977-04-18 1978-11-13 Philips Nv Photo coupler
JPS5840973U (ja) * 1981-09-12 1983-03-17 株式会社リコー 手動型読取装置
JPS5842622U (ja) * 1981-09-14 1983-03-22 ト−ヨ−カネツ株式会社 スクレイパ−付ゲ−ジプレ−ト
JP2016039267A (ja) * 2014-08-07 2016-03-22 ルネサスエレクトロニクス株式会社 光結合装置の製造方法、光結合装置、および電力変換システム
JP2016086098A (ja) * 2014-10-27 2016-05-19 パナソニックIpマネジメント株式会社 光結合装置

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946423A (en) * 1974-05-02 1976-03-23 Motorola, Inc. Opto-coupler
US3958175A (en) * 1974-12-16 1976-05-18 Bell Telephone Laboratories, Incorporated Current limiting switching circuit
JPS5642148B2 (ja) * 1975-01-24 1981-10-02
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
GB1557685A (en) * 1976-02-02 1979-12-12 Fairchild Camera Instr Co Optically coupled isolator device
US4109269A (en) * 1976-12-27 1978-08-22 National Semiconductor Corporation Opto-coupler semiconductor device
US4157560A (en) * 1977-12-30 1979-06-05 International Business Machines Corporation Photo detector cell
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
US5148243A (en) * 1985-06-25 1992-09-15 Hewlett-Packard Company Optical isolator with encapsulation
US5049527A (en) * 1985-06-25 1991-09-17 Hewlett-Packard Company Optical isolator
US4694183A (en) * 1985-06-25 1987-09-15 Hewlett-Packard Company Optical isolator fabricated upon a lead frame
US4863806A (en) * 1985-06-25 1989-09-05 Hewlett-Packard Company Optical isolator
JPS63163728U (ja) * 1986-09-29 1988-10-25
US5031017A (en) * 1988-01-29 1991-07-09 Hewlett-Packard Company Composite optical shielding
US6205654B1 (en) 1992-12-11 2001-03-27 Staktek Group L.P. Method of manufacturing a surface mount package
US5484959A (en) * 1992-12-11 1996-01-16 Staktek Corporation High density lead-on-package fabrication method and apparatus
DE59405248D1 (de) * 1993-09-23 1998-03-19 Siemens Ag Optokoppler und Verfahren zu dessen Herstellung
US5483024A (en) * 1993-10-08 1996-01-09 Texas Instruments Incorporated High density semiconductor package
JPH0883856A (ja) * 1994-09-14 1996-03-26 Rohm Co Ltd 半導体記憶装置
US6255141B1 (en) 1999-09-07 2001-07-03 National Semiconductor Corporation Method of packaging fuses
US6424375B1 (en) * 1999-09-21 2002-07-23 Pixel Devices, International Low noise active reset readout for image sensors
US6572387B2 (en) 1999-09-24 2003-06-03 Staktek Group, L.P. Flexible circuit connector for stacked chip module
US6608763B1 (en) 2000-09-15 2003-08-19 Staktek Group L.P. Stacking system and method
JP3974322B2 (ja) * 2000-12-07 2007-09-12 株式会社日立製作所 光半導体集積回路装置及び光記憶再生装置
US6462408B1 (en) 2001-03-27 2002-10-08 Staktek Group, L.P. Contact member stacking system and method
TWI630430B (zh) * 2017-07-26 2018-07-21 茂達電子股份有限公司 光耦合裝置及其支架模組

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1264513C2 (de) * 1963-11-29 1973-01-25 Texas Instruments Inc Bezugspotentialfreier gleichstromdifferenzverstaerker
US3535532A (en) * 1964-06-29 1970-10-20 Texas Instruments Inc Integrated circuit including light source,photodiode and associated components
US3462606A (en) * 1965-01-27 1969-08-19 Versitron Inc Photoelectric relay using positive feedback
US3424908A (en) * 1966-10-19 1969-01-28 Gen Electric Amplifier for photocell
US3524047A (en) * 1967-08-21 1970-08-11 Ibm Photosensitive sensing system
US3660669A (en) * 1970-04-15 1972-05-02 Motorola Inc Optical coupler made by juxtaposition of lead frame mounted sensor and light emitter
US3742599A (en) * 1970-12-14 1973-07-03 Gen Electric Processes for the fabrication of protected semiconductor devices
US3757175A (en) * 1971-01-06 1973-09-04 Soo Kim Chang Tor chips mounted on a single substrate composite integrated circuits with coplnaar connections to semiconduc

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394783A (en) * 1976-12-29 1978-08-19 Fujitsu Ltd Photo coupler
JPS53129990A (en) * 1977-04-18 1978-11-13 Philips Nv Photo coupler
JPS5840973U (ja) * 1981-09-12 1983-03-17 株式会社リコー 手動型読取装置
JPS5842622U (ja) * 1981-09-14 1983-03-22 ト−ヨ−カネツ株式会社 スクレイパ−付ゲ−ジプレ−ト
JP2016039267A (ja) * 2014-08-07 2016-03-22 ルネサスエレクトロニクス株式会社 光結合装置の製造方法、光結合装置、および電力変換システム
JP2016086098A (ja) * 2014-10-27 2016-05-19 パナソニックIpマネジメント株式会社 光結合装置

Also Published As

Publication number Publication date
GB1423779A (en) 1976-02-04
US3925801A (en) 1975-12-09
DE2305439A1 (de) 1973-08-23
US3836793A (en) 1974-09-17
JPS5234352B2 (ja) 1977-09-02
DE2305439B2 (de) 1977-04-28

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