JPS4886490A - - Google Patents

Info

Publication number
JPS4886490A
JPS4886490A JP47128274A JP12827472A JPS4886490A JP S4886490 A JPS4886490 A JP S4886490A JP 47128274 A JP47128274 A JP 47128274A JP 12827472 A JP12827472 A JP 12827472A JP S4886490 A JPS4886490 A JP S4886490A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47128274A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4886490A publication Critical patent/JPS4886490A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP47128274A 1972-01-25 1972-12-22 Pending JPS4886490A (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH105572A CH536028A (de) 1972-01-25 1972-01-25 Verfahren zur Herstellung einer monolithischen Vorrichtung mit isolierten Transistoren

Publications (1)

Publication Number Publication Date
JPS4886490A true JPS4886490A (en, 2012) 1973-11-15

Family

ID=4201392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47128274A Pending JPS4886490A (en, 2012) 1972-01-25 1972-12-22

Country Status (6)

Country Link
JP (1) JPS4886490A (en, 2012)
CA (1) CA992218A (en, 2012)
CH (1) CH536028A (en, 2012)
DE (1) DE2300412A1 (en, 2012)
FR (1) FR2169069A1 (en, 2012)
IT (1) IT971839B (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03165048A (ja) * 1989-11-22 1991-07-17 Mitsubishi Electric Corp 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049521A (en) * 1989-11-30 1991-09-17 Silicon General, Inc. Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03165048A (ja) * 1989-11-22 1991-07-17 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
CH536028A (de) 1973-04-15
DE2300412A1 (de) 1973-08-02
FR2169069A1 (en, 2012) 1973-09-07
CA992218A (en) 1976-06-29
IT971839B (it) 1974-05-10

Similar Documents

Publication Publication Date Title
JPS491773A (en, 2012)
FR2209550B1 (en, 2012)
FR2169069A1 (en, 2012)
JPS48112176U (en, 2012)
JPS5246119Y2 (en, 2012)
JPS4979987U (en, 2012)
JPS4960280A (en, 2012)
JPS4938978U (en, 2012)
JPS4937718U (en, 2012)
JPS4937524A (en, 2012)
JPS4917757A (en, 2012)
CH578154A5 (en, 2012)
CH576474A5 (en, 2012)
CH564726A5 (en, 2012)
PL74049B1 (en, 2012)
CH584195A5 (en, 2012)
CH584180A5 (en, 2012)
CH583718A5 (en, 2012)
CH582129A5 (en, 2012)
CH582042A5 (en, 2012)
CH581178A5 (en, 2012)
CH580161A5 (en, 2012)
CH579419A5 (en, 2012)
CH575934A5 (en, 2012)
BG17914A1 (en, 2012)