JPS4870485A - - Google Patents

Info

Publication number
JPS4870485A
JPS4870485A JP47114379A JP11437972A JPS4870485A JP S4870485 A JPS4870485 A JP S4870485A JP 47114379 A JP47114379 A JP 47114379A JP 11437972 A JP11437972 A JP 11437972A JP S4870485 A JPS4870485 A JP S4870485A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47114379A
Other languages
Japanese (ja)
Other versions
JPS51432B2 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4870485A publication Critical patent/JPS4870485A/ja
Publication of JPS51432B2 publication Critical patent/JPS51432B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926Elongated lead extending axially through another elongated lead

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP47114379A 1971-12-20 1972-11-16 Expired JPS51432B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20962171A 1971-12-20 1971-12-20

Publications (2)

Publication Number Publication Date
JPS4870485A true JPS4870485A (https=) 1973-09-25
JPS51432B2 JPS51432B2 (https=) 1976-01-08

Family

ID=22779538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47114379A Expired JPS51432B2 (https=) 1971-12-20 1972-11-16

Country Status (7)

Country Link
US (1) US3705419A (https=)
JP (1) JPS51432B2 (https=)
CA (1) CA960776A (https=)
DE (1) DE2257648C3 (https=)
FR (1) FR2164604B1 (https=)
GB (1) GB1340830A (https=)
IT (1) IT970966B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100657911B1 (ko) * 2004-11-10 2006-12-14 삼성전자주식회사 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자
KR20090029558A (ko) * 2007-09-18 2009-03-23 삼성전자주식회사 다이오드 및 그를 포함하는 메모리 소자
RU2470409C1 (ru) * 2011-06-16 2012-12-20 Государственное образовательное учреждение высшего профессионального образования "Петрозаводский государственный университет" Способ получения диода на основе оксида ниобия

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Also Published As

Publication number Publication date
GB1340830A (en) 1973-12-19
DE2257648A1 (de) 1973-06-28
IT970966B (it) 1974-04-20
CA960776A (en) 1975-01-07
FR2164604A1 (https=) 1973-08-03
JPS51432B2 (https=) 1976-01-08
US3705419A (en) 1972-12-05
FR2164604B1 (https=) 1976-08-20
DE2257648B2 (https=) 1980-10-02
DE2257648C3 (de) 1981-06-19

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