JPS4865882A - - Google Patents

Info

Publication number
JPS4865882A
JPS4865882A JP11996372A JP11996372A JPS4865882A JP S4865882 A JPS4865882 A JP S4865882A JP 11996372 A JP11996372 A JP 11996372A JP 11996372 A JP11996372 A JP 11996372A JP S4865882 A JPS4865882 A JP S4865882A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11996372A
Other languages
Japanese (ja)
Other versions
JPS5117876B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4865882A publication Critical patent/JPS4865882A/ja
Publication of JPS5117876B2 publication Critical patent/JPS5117876B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Led Devices (AREA)
JP11996372A 1971-12-02 1972-12-01 Expired JPS5117876B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00204222A US3824133A (en) 1971-12-02 1971-12-02 Fabrication of electrically insulating regions in optical devices by proton bombardment

Publications (2)

Publication Number Publication Date
JPS4865882A true JPS4865882A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-09-10
JPS5117876B2 JPS5117876B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-06-05

Family

ID=22757099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11996372A Expired JPS5117876B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-12-02 1972-12-01

Country Status (6)

Country Link
US (1) US3824133A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5117876B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE791929A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA962374A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2258444B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1365570A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4884650A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-02-10 1973-11-10
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho
JPS5277687A (en) * 1975-12-24 1977-06-30 Sharp Corp Manufacture of semiconductor laser element
JPS52116088A (en) * 1976-03-25 1977-09-29 Sharp Corp Preparation of semiconductor laser element
JPS53988A (en) * 1977-07-22 1978-01-07 Sharp Corp Structure of semiconductor laser element
JPS58162091A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ素子及びその製造方法
JPS58194333A (ja) * 1982-05-10 1983-11-12 Rikagaku Kenkyusho イオン注入による結晶層界面の結晶組成制御方法
JPS58219790A (ja) * 1982-06-14 1983-12-21 Sanyo Electric Co Ltd 半導体発光素子
JPH03276661A (ja) * 1990-03-26 1991-12-06 Mitsubishi Electric Corp 絶縁領域の形成方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562407B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-01-31 1981-01-20
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
US4010483A (en) * 1974-08-08 1977-03-01 International Telephone And Telegraph Corporation Current confining light emitting diode
GB1564702A (en) * 1975-11-17 1980-04-10 Post Office Semiconductor devices
US4080617A (en) * 1976-06-09 1978-03-21 Northern Telecom Limited Optoelectronic devices with control of light propagation
US4138274A (en) * 1976-06-09 1979-02-06 Northern Telecom Limited Method of producing optoelectronic devices with control of light propagation by proton bombardment
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device
US4124826A (en) * 1977-03-01 1978-11-07 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor lasers
NL7800583A (nl) * 1978-01-18 1979-07-20 Philips Nv Werkwijze voor het vervaardigen van een in- richting en inrichting vervaardigd met behulp van de werkwijze.
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
NL8003336A (nl) * 1979-06-12 1980-12-16 Dearnaley G Werkwijze voor de vervaardiging van een halfgeleider- inrichting.
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
JPS56104488A (en) * 1980-01-23 1981-08-20 Hitachi Ltd Semiconductor laser element
US4340967A (en) * 1980-06-02 1982-07-20 Bell Telephone Laboratories, Incorporated Semiconductor lasers with stable higher-order modes parallel to the junction plane
US4514896A (en) * 1981-03-25 1985-05-07 At&T Bell Laboratories Method of forming current confinement channels in semiconductor devices
US4447905A (en) * 1981-03-25 1984-05-08 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor light emitting devices
US4352835A (en) * 1981-07-01 1982-10-05 Western Electric Co., Inc. Masking portions of a substrate
US4403397A (en) * 1981-07-13 1983-09-13 The United States Of America As Represented By The Secretary Of The Navy Method of making avalanche photodiodes
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
US4523961A (en) * 1982-11-12 1985-06-18 At&T Bell Laboratories Method of improving current confinement in semiconductor lasers by inert ion bombardment
US4599791A (en) * 1983-11-28 1986-07-15 At&T Bell Laboratories Method of making integrated circuits employing proton-bombarded AlGaAs layers
US4539743A (en) * 1983-11-28 1985-09-10 At&T Bell Laboratories Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
US4597165A (en) * 1983-11-28 1986-07-01 At&T Bell Laboratories Method of making integrated circuits employing ion-bombarded InP layers
US5358877A (en) * 1991-03-29 1994-10-25 Electronic Decisions Inc. Soft proton isolation process for an acoustic charge transport integrated circuit
US5804461A (en) * 1994-12-22 1998-09-08 Polaroid Corporation Laser diode with an ion-implant region
DE19918651A1 (de) * 1999-04-16 2000-10-19 Friedrich Schiller Uni Jena Bu Lichtemittierende Halbleiterdiode und Verfahren zu ihrer Herstellung
CN1802755B (zh) * 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4884650A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-02-10 1973-11-10
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho
JPS5277687A (en) * 1975-12-24 1977-06-30 Sharp Corp Manufacture of semiconductor laser element
JPS52116088A (en) * 1976-03-25 1977-09-29 Sharp Corp Preparation of semiconductor laser element
JPS53988A (en) * 1977-07-22 1978-01-07 Sharp Corp Structure of semiconductor laser element
JPS58162091A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ素子及びその製造方法
JPS58194333A (ja) * 1982-05-10 1983-11-12 Rikagaku Kenkyusho イオン注入による結晶層界面の結晶組成制御方法
JPS58219790A (ja) * 1982-06-14 1983-12-21 Sanyo Electric Co Ltd 半導体発光素子
JPH03276661A (ja) * 1990-03-26 1991-12-06 Mitsubishi Electric Corp 絶縁領域の形成方法

Also Published As

Publication number Publication date
BE791929A (fr) 1973-03-16
US3824133A (en) 1974-07-16
DE2258444B2 (de) 1975-09-18
DE2258444A1 (de) 1973-06-07
CA962374A (en) 1975-02-04
GB1365570A (en) 1974-09-04
JPS5117876B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-06-05
AU4948672A (en) 1973-05-24

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