JPS4847768A - - Google Patents
Info
- Publication number
- JPS4847768A JPS4847768A JP46082730A JP8273071A JPS4847768A JP S4847768 A JPS4847768 A JP S4847768A JP 46082730 A JP46082730 A JP 46082730A JP 8273071 A JP8273071 A JP 8273071A JP S4847768 A JPS4847768 A JP S4847768A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8273071A JPS5433514B2 (https=) | 1971-10-19 | 1971-10-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8273071A JPS5433514B2 (https=) | 1971-10-19 | 1971-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4847768A true JPS4847768A (https=) | 1973-07-06 |
| JPS5433514B2 JPS5433514B2 (https=) | 1979-10-20 |
Family
ID=13782525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8273071A Expired JPS5433514B2 (https=) | 1971-10-19 | 1971-10-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5433514B2 (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861643A (ja) * | 1981-09-18 | 1983-04-12 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 半導体装置の製造方法 |
| JPS6052018A (ja) * | 1983-08-31 | 1985-03-23 | Nec Corp | 砒化ガリウム高抵抗パタ−ン形成方法 |
| JPH02119265A (ja) * | 1988-10-28 | 1990-05-07 | Nec Corp | 化合物半導体装置 |
-
1971
- 1971-10-19 JP JP8273071A patent/JPS5433514B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861643A (ja) * | 1981-09-18 | 1983-04-12 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 半導体装置の製造方法 |
| JPS6052018A (ja) * | 1983-08-31 | 1985-03-23 | Nec Corp | 砒化ガリウム高抵抗パタ−ン形成方法 |
| JPH02119265A (ja) * | 1988-10-28 | 1990-05-07 | Nec Corp | 化合物半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5433514B2 (https=) | 1979-10-20 |