JPS4843971A - - Google Patents

Info

Publication number
JPS4843971A
JPS4843971A JP47094670A JP9467072A JPS4843971A JP S4843971 A JPS4843971 A JP S4843971A JP 47094670 A JP47094670 A JP 47094670A JP 9467072 A JP9467072 A JP 9467072A JP S4843971 A JPS4843971 A JP S4843971A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47094670A
Other versions
JPS5643558B2 (ja
Inventor
L G Heller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS4843971A publication Critical patent/JPS4843971A/ja
Publication of JPS5643558B2 publication Critical patent/JPS5643558B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4094Bit-line management or control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4099Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Meter Arrangements (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Amplifiers (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP9467072A 1971-10-01 1972-09-22 Expired JPS5643558B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18560471A 1971-10-01 1971-10-01

Publications (2)

Publication Number Publication Date
JPS4843971A true JPS4843971A (ja) 1973-06-25
JPS5643558B2 JPS5643558B2 (ja) 1981-10-13

Family

ID=22681683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9467072A Expired JPS5643558B2 (ja) 1971-10-01 1972-09-22

Country Status (13)

Country Link
US (1) US3764906A (ja)
JP (1) JPS5643558B2 (ja)
AU (1) AU465797B2 (ja)
BE (1) BE789528A (ja)
CA (1) CA971228A (ja)
CH (1) CH538699A (ja)
DE (1) DE2247937C3 (ja)
ES (1) ES406780A1 (ja)
FR (1) FR2154665B1 (ja)
GB (1) GB1397152A (ja)
IT (1) IT974640B (ja)
NL (1) NL179170C (ja)
SE (1) SE373438B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0192431A (ja) * 1987-09-30 1989-04-11 Asahi Chem Ind Co Ltd 開繊装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010453A (en) * 1975-12-03 1977-03-01 International Business Machines Corporation Stored charge differential sense amplifier
US4300210A (en) * 1979-12-27 1981-11-10 International Business Machines Corp. Calibrated sensing system
US4459609A (en) * 1981-09-14 1984-07-10 International Business Machines Corporation Charge-stabilized memory
JPS5926855U (ja) * 1982-08-13 1984-02-20 オムロン株式会社 タイマ
US6025794A (en) * 1996-02-09 2000-02-15 Matsushita Electric Industrial Co., Ltd. Signal transmission circuit, signal transmission method A/D converter and solid-state imaging element
US6486680B1 (en) * 2000-06-13 2002-11-26 The North American Manufacturing Company Edge detector
US8605528B2 (en) 2011-11-03 2013-12-10 International Business Machines Corporation Sense amplifier having an isolated pre-charge architecture, a memory circuit incorporating such a sense amplifier and associated methods
US9224437B2 (en) 2013-10-31 2015-12-29 Globalfoundries Inc. Gated-feedback sense amplifier for single-ended local bit-line memories
US11037621B2 (en) * 2018-12-26 2021-06-15 Micron Technology, Inc. Sensing techniques using a charge transfer device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414807A (en) * 1963-07-04 1968-12-03 Int Standard Electric Corp Digital voltmeter employing discharge of a large capacitor in steps by a small capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0192431A (ja) * 1987-09-30 1989-04-11 Asahi Chem Ind Co Ltd 開繊装置

Also Published As

Publication number Publication date
CA971228A (en) 1975-07-15
DE2247937B2 (de) 1974-08-29
SE373438B (ja) 1975-02-03
DE2247937C3 (de) 1975-05-07
NL179170C (nl) 1986-07-16
FR2154665A1 (ja) 1973-05-11
AU4648072A (en) 1974-03-14
ES406780A1 (es) 1976-02-01
GB1397152A (en) 1975-06-11
JPS5643558B2 (ja) 1981-10-13
NL179170B (nl) 1986-02-17
NL7212647A (ja) 1973-04-03
US3764906A (en) 1973-10-09
AU465797B2 (en) 1975-10-09
IT974640B (it) 1974-07-10
FR2154665B1 (ja) 1976-08-13
DE2247937A1 (de) 1973-04-05
CH538699A (de) 1973-06-30
BE789528A (fr) 1973-01-15

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