JPS4840805B1 - - Google Patents

Info

Publication number
JPS4840805B1
JPS4840805B1 JP45116919A JP11691970A JPS4840805B1 JP S4840805 B1 JPS4840805 B1 JP S4840805B1 JP 45116919 A JP45116919 A JP 45116919A JP 11691970 A JP11691970 A JP 11691970A JP S4840805 B1 JPS4840805 B1 JP S4840805B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45116919A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4840805B1 publication Critical patent/JPS4840805B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
JP45116919A 1970-02-20 1970-12-24 Pending JPS4840805B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1297770A 1970-02-20 1970-02-20

Publications (1)

Publication Number Publication Date
JPS4840805B1 true JPS4840805B1 (ja) 1973-12-03

Family

ID=21757664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45116919A Pending JPS4840805B1 (ja) 1970-02-20 1970-12-24

Country Status (4)

Country Link
US (1) US3676231A (ja)
JP (1) JPS4840805B1 (ja)
DE (1) DE2107991A1 (ja)
FR (1) FR2081021B1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959040A (en) * 1971-09-01 1976-05-25 Motorola, Inc. Compound diffused regions for emitter-coupled logic circuits
US4129090A (en) * 1973-02-28 1978-12-12 Hitachi, Ltd. Apparatus for diffusion into semiconductor wafers
US3966515A (en) * 1974-05-17 1976-06-29 Teledyne, Inc. Method for manufacturing high voltage field-effect transistors
DE2838928A1 (de) * 1978-09-07 1980-03-20 Ibm Deutschland Verfahren zum dotieren von siliciumkoerpern mit bor
US4234361A (en) * 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
US5494852A (en) * 1993-07-28 1996-02-27 Sony Electronics Inc. High capacity semiconductor dopant deposition/oxidization process using a single furnace cycle
DE19840866B4 (de) * 1998-08-31 2005-02-03 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren zur Dotierung der externen Basisanschlußgebiete von Si-basierten Einfach-Polysilizium-npn-Bipolartransistoren
DE102012025429A1 (de) * 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1115140A (en) * 1966-12-30 1968-05-29 Standard Telephones Cables Ltd Semiconductors
US3542609A (en) * 1967-11-22 1970-11-24 Itt Double depositions of bbr3 in silicon

Also Published As

Publication number Publication date
DE2107991A1 (de) 1971-08-26
FR2081021A1 (ja) 1971-11-26
FR2081021B1 (ja) 1974-03-01
US3676231A (en) 1972-07-11

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