JPS4834675A - - Google Patents

Info

Publication number
JPS4834675A
JPS4834675A JP47084700A JP8470072A JPS4834675A JP S4834675 A JPS4834675 A JP S4834675A JP 47084700 A JP47084700 A JP 47084700A JP 8470072 A JP8470072 A JP 8470072A JP S4834675 A JPS4834675 A JP S4834675A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47084700A
Other languages
Japanese (ja)
Other versions
JPS5141550B2 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4834675A publication Critical patent/JPS4834675A/ja
Publication of JPS5141550B2 publication Critical patent/JPS5141550B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/114Nitrides of silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
JP47084700A 1971-09-03 1972-08-25 Expired JPS5141550B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17784071A 1971-09-03 1971-09-03

Publications (2)

Publication Number Publication Date
JPS4834675A true JPS4834675A (https=) 1973-05-21
JPS5141550B2 JPS5141550B2 (https=) 1976-11-10

Family

ID=22650170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47084700A Expired JPS5141550B2 (https=) 1971-09-03 1972-08-25

Country Status (12)

Country Link
US (1) US3715249A (https=)
JP (1) JPS5141550B2 (https=)
KR (1) KR780000506B1 (https=)
BE (1) BE788159A (https=)
CA (1) CA958313A (https=)
DE (1) DE2241870C3 (https=)
FR (1) FR2151104B1 (https=)
GB (1) GB1392758A (https=)
HK (1) HK35876A (https=)
IT (1) IT962297B (https=)
NL (1) NL154059B (https=)
SE (1) SE375118B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7390436B2 (en) 2004-04-08 2008-06-24 Shin-Etsu Chemical Co., Ltd Zirconium or hafnium-containing oxides

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425684A1 (de) * 1974-05-28 1975-12-11 Ibm Deutschland Verfahren zum aetzen von silicium enthaltenden materialien
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
US5215930A (en) * 1991-10-23 1993-06-01 At&T Bell Laboratories Integrated circuit etching of silicon nitride and polysilicon using phosphoric acid
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
US5607543A (en) * 1995-04-28 1997-03-04 Lucent Technologies Inc. Integrated circuit etching
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
WO2005067019A1 (en) * 2003-12-30 2005-07-21 Akrion, Llc System and method for selective etching of silicon nitride during substrate processing
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7390436B2 (en) 2004-04-08 2008-06-24 Shin-Etsu Chemical Co., Ltd Zirconium or hafnium-containing oxides

Also Published As

Publication number Publication date
KR780000506B1 (en) 1978-10-25
BE788159A (fr) 1972-12-18
IT962297B (it) 1973-12-20
NL154059B (nl) 1977-07-15
SE375118B (https=) 1975-04-07
FR2151104A1 (https=) 1973-04-13
HK35876A (en) 1976-06-18
DE2241870B2 (de) 1976-03-11
CA958313A (en) 1974-11-26
DE2241870A1 (de) 1973-03-22
GB1392758A (en) 1975-04-30
US3715249A (en) 1973-02-06
DE2241870C3 (de) 1978-04-20
FR2151104B1 (https=) 1974-08-19
JPS5141550B2 (https=) 1976-11-10
NL7211625A (https=) 1973-03-06

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