JPS4833876B1 - - Google Patents

Info

Publication number
JPS4833876B1
JPS4833876B1 JP44103479A JP10347969A JPS4833876B1 JP S4833876 B1 JPS4833876 B1 JP S4833876B1 JP 44103479 A JP44103479 A JP 44103479A JP 10347969 A JP10347969 A JP 10347969A JP S4833876 B1 JPS4833876 B1 JP S4833876B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44103479A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4833876B1 publication Critical patent/JPS4833876B1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • C30B15/16Heating of the melt or the crystallised materials by irradiation or electric discharge
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP44103479A 1969-04-03 1969-12-24 Pending JPS4833876B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81326769A 1969-04-03 1969-04-03

Publications (1)

Publication Number Publication Date
JPS4833876B1 true JPS4833876B1 (fr) 1973-10-17

Family

ID=25211930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44103479A Pending JPS4833876B1 (fr) 1969-04-03 1969-12-24

Country Status (7)

Country Link
US (1) US3627500A (fr)
JP (1) JPS4833876B1 (fr)
BE (1) BE748377A (fr)
DE (1) DE2016101C3 (fr)
FR (1) FR2038216B1 (fr)
GB (1) GB1249537A (fr)
NL (1) NL7004740A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5094103A (fr) * 1973-12-21 1975-07-26
JPS5420105A (en) * 1977-07-13 1979-02-15 Totsuto Shiyouji Yuugen Production of leather article with backing material
JPS5470401A (en) * 1977-11-12 1979-06-06 Nakatora Kk Multilevel patterning on leather

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2649201C2 (de) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm unter Verwendung eines Formgebungsteils
DE2649223C2 (de) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPH0412083A (ja) * 1990-04-27 1992-01-16 Osaka Titanium Co Ltd シリコン単結晶製造方法
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
US6126742A (en) * 1996-09-20 2000-10-03 Forshungszentrum Karlsruhe Gmbh Method of drawing single crystals
DE19638563C2 (de) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Verfahren zum Ziehen von Einkristallen
US20040255442A1 (en) * 2003-06-19 2004-12-23 Mcdiarmid James Methods and apparatus for processing workpieces
CN112058596B (zh) * 2020-09-14 2022-12-02 河源市璐悦自动化设备有限公司 一种大尺寸lcd光学玻璃的均匀涂胶工艺

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5094103A (fr) * 1973-12-21 1975-07-26
JPS5420105A (en) * 1977-07-13 1979-02-15 Totsuto Shiyouji Yuugen Production of leather article with backing material
JPS5470401A (en) * 1977-11-12 1979-06-06 Nakatora Kk Multilevel patterning on leather

Also Published As

Publication number Publication date
FR2038216B1 (fr) 1974-12-06
NL7004740A (fr) 1970-10-06
DE2016101A1 (de) 1970-10-08
DE2016101B2 (de) 1973-04-26
DE2016101C3 (de) 1973-11-22
US3627500A (en) 1971-12-14
GB1249537A (en) 1971-10-13
FR2038216A1 (fr) 1971-01-08
BE748377A (fr) 1970-10-02

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