FR2038216A1 - - Google Patents

Info

Publication number
FR2038216A1
FR2038216A1 FR7011919A FR7011919A FR2038216A1 FR 2038216 A1 FR2038216 A1 FR 2038216A1 FR 7011919 A FR7011919 A FR 7011919A FR 7011919 A FR7011919 A FR 7011919A FR 2038216 A1 FR2038216 A1 FR 2038216A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7011919A
Other versions
FR2038216B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of FR2038216A1 publication Critical patent/FR2038216A1/fr
Application granted granted Critical
Publication of FR2038216B1 publication Critical patent/FR2038216B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7011919A 1969-04-03 1970-04-02 Expired FR2038216B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81326769A 1969-04-03 1969-04-03

Publications (2)

Publication Number Publication Date
FR2038216A1 true FR2038216A1 (fr) 1971-01-08
FR2038216B1 FR2038216B1 (fr) 1974-12-06

Family

ID=25211930

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7011919A Expired FR2038216B1 (fr) 1969-04-03 1970-04-02

Country Status (7)

Country Link
US (1) US3627500A (fr)
JP (1) JPS4833876B1 (fr)
BE (1) BE748377A (fr)
DE (1) DE2016101C3 (fr)
FR (1) FR2038216B1 (fr)
GB (1) GB1249537A (fr)
NL (1) NL7004740A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5094103A (fr) * 1973-12-21 1975-07-26
DE2649201C2 (de) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm unter Verwendung eines Formgebungsteils
DE2649223C2 (de) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm
JPS5420105A (en) * 1977-07-13 1979-02-15 Totsuto Shiyouji Yuugen Production of leather article with backing material
JPS5470401A (en) * 1977-11-12 1979-06-06 Nakatora Kk Multilevel patterning on leather
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPH0412083A (ja) * 1990-04-27 1992-01-16 Osaka Titanium Co Ltd シリコン単結晶製造方法
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
DE19638563C2 (de) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Verfahren zum Ziehen von Einkristallen
US6126742A (en) * 1996-09-20 2000-10-03 Forshungszentrum Karlsruhe Gmbh Method of drawing single crystals
US20040255442A1 (en) * 2003-06-19 2004-12-23 Mcdiarmid James Methods and apparatus for processing workpieces
CN112058596B (zh) * 2020-09-14 2022-12-02 河源市璐悦自动化设备有限公司 一种大尺寸lcd光学玻璃的均匀涂胶工艺

Also Published As

Publication number Publication date
FR2038216B1 (fr) 1974-12-06
GB1249537A (en) 1971-10-13
JPS4833876B1 (fr) 1973-10-17
BE748377A (fr) 1970-10-02
DE2016101B2 (de) 1973-04-26
DE2016101A1 (de) 1970-10-08
US3627500A (en) 1971-12-14
NL7004740A (fr) 1970-10-06
DE2016101C3 (de) 1973-11-22

Similar Documents

Publication Publication Date Title
AU2270770A (fr)
AU465452B2 (fr)
AU429630B2 (fr)
FR2038216B1 (fr)
AU450150B2 (fr)
AU2355770A (fr)
AU427401B2 (fr)
AU414607B2 (fr)
AU428074B2 (fr)
AU425297B2 (fr)
AU442554B2 (fr)
AU438128B2 (fr)
AU442535B2 (fr)
AU442357B2 (fr)
AU442380B2 (fr)
AU428131B2 (fr)
AU442538B2 (fr)
AU442322B2 (fr)
AU442285B2 (fr)
AU410358B2 (fr)
AU428129B2 (fr)
JPS4838982Y1 (fr)
CS149746B1 (fr)
AU4953367A (fr)
BE738527A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse