JPS4830715B1 - - Google Patents

Info

Publication number
JPS4830715B1
JPS4830715B1 JP5257264A JP5257264A JPS4830715B1 JP S4830715 B1 JPS4830715 B1 JP S4830715B1 JP 5257264 A JP5257264 A JP 5257264A JP 5257264 A JP5257264 A JP 5257264A JP S4830715 B1 JPS4830715 B1 JP S4830715B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5257264A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4830715B1 publication Critical patent/JPS4830715B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
JP5257264A 1963-09-16 1964-09-14 Pending JPS4830715B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US309062A US3290539A (en) 1963-09-16 1963-09-16 Planar p-nu junction light source with reflector means to collimate the emitted light

Publications (1)

Publication Number Publication Date
JPS4830715B1 true JPS4830715B1 (ja) 1973-09-22

Family

ID=23196513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5257264A Pending JPS4830715B1 (ja) 1963-09-16 1964-09-14

Country Status (4)

Country Link
US (1) US3290539A (ja)
JP (1) JPS4830715B1 (ja)
DE (1) DE1262448C2 (ja)
GB (1) GB1083507A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006191068A (ja) * 2004-12-31 2006-07-20 Lg Electron Inc 高出力発光ダイオード及びその製造方法

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US3590248A (en) * 1965-04-13 1971-06-29 Massachusetts Inst Technology Laser arrays
US3430109A (en) * 1965-09-28 1969-02-25 Chou H Li Solid-state device with differentially expanded junction surface
US3512054A (en) * 1965-12-21 1970-05-12 Tokyo Shibaura Electric Co Semiconductive transducer
US3443141A (en) * 1966-08-04 1969-05-06 American Cyanamid Co Electroluminescent from cooled,homo-geneous gallium sulfide crystal
NL6614122A (ja) * 1966-10-07 1968-04-08
US3522043A (en) * 1966-12-07 1970-07-28 Norton Research Corp Method for masking electroluminescent diode
US3631360A (en) * 1967-07-13 1971-12-28 Kurt Lehovec Electro-optical structures utilizing fresnel optical systems
US3569997A (en) * 1967-07-13 1971-03-09 Inventors And Investors Inc Photoelectric microcircuit components monolythically integrated with zone plate optics
US3622906A (en) * 1967-10-24 1971-11-23 Rca Corp Light-emitting diode array
US3686543A (en) * 1968-02-08 1972-08-22 Rca Corp Angled array semiconductor light sources
US3555335A (en) * 1969-02-27 1971-01-12 Bell Telephone Labor Inc Electroluminescent displays
US3593190A (en) * 1969-04-16 1971-07-13 Texas Instruments Inc Electron beam pumped semiconductor laser having an array of mosaic elements
US3676668A (en) * 1969-12-29 1972-07-11 Gen Electric Solid state lamp assembly
US3675064A (en) * 1970-02-16 1972-07-04 Motorola Inc Directed emission light emitting diode
US3800177A (en) * 1971-12-20 1974-03-26 Motorola Inc Integrated light emitting diode display device with housing
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JPS5223717B2 (ja) * 1972-05-02 1977-06-25
NL7312139A (ja) * 1972-09-08 1974-03-12
US3855546A (en) * 1973-09-21 1974-12-17 Texas Instruments Inc Folded lobe large optical cavity laser diode
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US3996492A (en) * 1975-05-28 1976-12-07 International Business Machines Corporation Two-dimensional integrated injection laser array
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DE2641540C2 (de) * 1976-09-15 1981-10-29 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiodenzeile zur Erzeugung eines sehr feinen Rasters von Lichtpunkten
DE2755433C2 (de) * 1977-12-13 1986-09-25 Telefunken electronic GmbH, 7100 Heilbronn Strahlungsemittierende Halbleiterdiode
US4255688A (en) * 1977-12-15 1981-03-10 Tokyo Shibaura Denki Kabushiki Kaisha Light emitter mounted on reflector formed on end of lead
US4181405A (en) * 1978-08-07 1980-01-01 The Singer Company Head-up viewing display
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DE3148843C2 (de) * 1981-12-10 1986-01-02 Telefunken electronic GmbH, 7100 Heilbronn Mehrfach-Leuchtdiodenanordnung
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JPS618981A (ja) * 1984-06-23 1986-01-16 Oki Electric Ind Co Ltd 半導体発光素子
DE3438154C2 (de) * 1984-10-18 1994-09-15 Teves Gmbh Alfred Rückleuchte für Kraftfahrzeuge
FR2589629B1 (fr) * 1985-11-05 1987-12-18 Radiotechnique Compelec Composant opto-electronique pour montage en surface et son procede de fabrication
US4827186A (en) * 1987-03-19 1989-05-02 Magnavox Government And Industrial Electronics Company Alternating current plasma display panel
DE3835942A1 (de) * 1988-10-21 1990-04-26 Telefunken Electronic Gmbh Flaechenhafter strahler
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006191068A (ja) * 2004-12-31 2006-07-20 Lg Electron Inc 高出力発光ダイオード及びその製造方法

Also Published As

Publication number Publication date
DE1262448C2 (de) 1979-06-28
DE1262448B (de) 1968-03-07
GB1083507A (en) 1967-09-13
US3290539A (en) 1966-12-06

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