JPS4820106B1 - - Google Patents

Info

Publication number
JPS4820106B1
JPS4820106B1 JP43015116A JP1511668A JPS4820106B1 JP S4820106 B1 JPS4820106 B1 JP S4820106B1 JP 43015116 A JP43015116 A JP 43015116A JP 1511668 A JP1511668 A JP 1511668A JP S4820106 B1 JPS4820106 B1 JP S4820106B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43015116A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP43015116A priority Critical patent/JPS4820106B1/ja
Priority to GB1251251D priority patent/GB1251251A/en
Priority to DE1911715A priority patent/DE1911715B2/de
Priority to US805626A priority patent/US3615203A/en
Publication of JPS4820106B1 publication Critical patent/JPS4820106B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition
JP43015116A 1968-03-08 1968-03-08 Pending JPS4820106B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP43015116A JPS4820106B1 (ko) 1968-03-08 1968-03-08
GB1251251D GB1251251A (ko) 1968-03-08 1969-03-06
DE1911715A DE1911715B2 (de) 1968-03-08 1969-03-07 Verfahren zur Herstellung eines Verbindungshalbleiters
US805626A US3615203A (en) 1968-03-08 1969-03-10 Method for the preparation of groups iii{14 v single crystal semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43015116A JPS4820106B1 (ko) 1968-03-08 1968-03-08

Publications (1)

Publication Number Publication Date
JPS4820106B1 true JPS4820106B1 (ko) 1973-06-19

Family

ID=11879844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43015116A Pending JPS4820106B1 (ko) 1968-03-08 1968-03-08

Country Status (4)

Country Link
US (1) US3615203A (ko)
JP (1) JPS4820106B1 (ko)
DE (1) DE1911715B2 (ko)
GB (1) GB1251251A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113903U (ko) * 1975-03-12 1976-09-16

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040894A (en) * 1967-06-13 1977-08-09 Huguette Fumeron Rodot Process of preparing crystals of compounds and alloys
US3899572A (en) * 1969-12-13 1975-08-12 Sony Corp Process for producing phosphides
US3947548A (en) * 1970-10-01 1976-03-30 Semiconductor Research Foundation Process of growing single crystals of gallium phosphide
JPS5148152B2 (ko) * 1972-05-11 1976-12-18
US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
US4181515A (en) * 1974-09-24 1980-01-01 The Post Office Method of making dielectric optical waveguides
DE2510612C2 (de) * 1975-03-11 1985-01-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von kompaktem, einphasigem Galliumphosphid stöchiometrischer Zusammensetzung
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4169727A (en) * 1978-05-01 1979-10-02 Morgan Semiconductor, Inc. Alloy of silicon and gallium arsenide
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
KR101241922B1 (ko) * 2005-06-22 2013-03-11 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 통합 가스 배합 장치 및 방법
US7943204B2 (en) 2005-08-30 2011-05-17 Advanced Technology Materials, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
SG188150A1 (en) 2008-02-11 2013-03-28 Advanced Tech Materials Ion source cleaning in semiconductor processing systems
US20110021011A1 (en) * 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TW201241249A (en) * 2011-04-12 2012-10-16 Dingten Ind Inc Single crystal growth method for vertical high temperature and high pressure group III-V compound
KR20220025123A (ko) 2012-02-14 2022-03-03 엔테그리스, 아이엔씨. 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1029803B (de) * 1954-09-18 1958-05-14 Siemens Ag Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
NL286890A (ko) * 1962-03-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113903U (ko) * 1975-03-12 1976-09-16

Also Published As

Publication number Publication date
DE1911715A1 (de) 1969-10-09
DE1911715B2 (de) 1976-01-02
US3615203A (en) 1971-10-26
GB1251251A (ko) 1971-10-27

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