JPS4813873B1 - - Google Patents
Info
- Publication number
- JPS4813873B1 JPS4813873B1 JP45057325A JP5732570A JPS4813873B1 JP S4813873 B1 JPS4813873 B1 JP S4813873B1 JP 45057325 A JP45057325 A JP 45057325A JP 5732570 A JP5732570 A JP 5732570A JP S4813873 B1 JPS4813873 B1 JP S4813873B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6910195.A NL161924C (nl) | 1969-07-03 | 1969-07-03 | Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4813873B1 true JPS4813873B1 (OSRAM) | 1973-05-01 |
Family
ID=19807372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP45057325A Pending JPS4813873B1 (OSRAM) | 1969-07-03 | 1970-07-02 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3649885A (OSRAM) |
| JP (1) | JPS4813873B1 (OSRAM) |
| AT (1) | AT331859B (OSRAM) |
| BE (1) | BE752837A (OSRAM) |
| CH (1) | CH514938A (OSRAM) |
| ES (1) | ES381331A1 (OSRAM) |
| FR (1) | FR2050486B1 (OSRAM) |
| GB (1) | GB1318047A (OSRAM) |
| NL (1) | NL161924C (OSRAM) |
| SE (1) | SE365069B (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5160573U (OSRAM) * | 1974-11-07 | 1976-05-13 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1357515A (en) * | 1972-03-10 | 1974-06-26 | Matsushita Electronics Corp | Method for manufacturing an mos integrated circuit |
| US4389660A (en) * | 1980-07-31 | 1983-06-21 | Rockwell International Corporation | High power solid state switch |
| JPS58119670A (ja) * | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | 半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA801891A (en) * | 1968-12-17 | Matsushita Electronics Corporation | Insulated-gate field-effect transistor free from permanent breakdown | |
| US3764864A (en) * | 1966-03-29 | 1973-10-09 | Matsushita Electronics Corp | Insulated-gate field-effect transistor with punch-through effect element |
| GB1132810A (en) * | 1966-03-30 | 1968-11-06 | Matsushita Electronics Corp | Field-effect transistor having insulated gates |
| GB1131675A (en) * | 1966-07-11 | 1968-10-23 | Hitachi Ltd | Semiconductor device |
| US3469155A (en) * | 1966-09-23 | 1969-09-23 | Westinghouse Electric Corp | Punch-through means integrated with mos type devices for protection against insulation layer breakdown |
| US3555374A (en) * | 1967-03-03 | 1971-01-12 | Hitachi Ltd | Field effect semiconductor device having a protective diode |
| US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
| US3512058A (en) * | 1968-04-10 | 1970-05-12 | Rca Corp | High voltage transient protection for an insulated gate field effect transistor |
-
1969
- 1969-07-03 NL NL6910195.A patent/NL161924C/xx not_active IP Right Cessation
-
1970
- 1970-06-24 US US49404A patent/US3649885A/en not_active Expired - Lifetime
- 1970-06-30 SE SE09048/70A patent/SE365069B/xx unknown
- 1970-06-30 AT AT585870A patent/AT331859B/de not_active IP Right Cessation
- 1970-06-30 CH CH990470A patent/CH514938A/de not_active IP Right Cessation
- 1970-07-01 ES ES381331A patent/ES381331A1/es not_active Expired
- 1970-07-01 GB GB3191870A patent/GB1318047A/en not_active Expired
- 1970-07-01 BE BE752837D patent/BE752837A/xx unknown
- 1970-07-02 JP JP45057325A patent/JPS4813873B1/ja active Pending
- 1970-07-03 FR FR7024779A patent/FR2050486B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5160573U (OSRAM) * | 1974-11-07 | 1976-05-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2030918B2 (de) | 1977-03-24 |
| SE365069B (OSRAM) | 1974-03-11 |
| US3649885A (en) | 1972-03-14 |
| BE752837A (fr) | 1971-01-04 |
| ATA585870A (de) | 1975-12-15 |
| AT331859B (de) | 1976-08-25 |
| CH514938A (de) | 1971-10-31 |
| ES381331A1 (es) | 1972-12-01 |
| GB1318047A (en) | 1973-05-23 |
| NL161924C (nl) | 1980-03-17 |
| FR2050486B1 (OSRAM) | 1975-01-10 |
| NL161924B (nl) | 1979-10-15 |
| FR2050486A1 (OSRAM) | 1971-04-02 |
| NL6910195A (OSRAM) | 1971-01-05 |
| DE2030918A1 (de) | 1971-01-21 |