JPS48102988A - - Google Patents
Info
- Publication number
- JPS48102988A JPS48102988A JP3557472A JP3557472A JPS48102988A JP S48102988 A JPS48102988 A JP S48102988A JP 3557472 A JP3557472 A JP 3557472A JP 3557472 A JP3557472 A JP 3557472A JP S48102988 A JPS48102988 A JP S48102988A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3557472A JPS48102988A (xx) | 1972-04-07 | 1972-04-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3557472A JPS48102988A (xx) | 1972-04-07 | 1972-04-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS48102988A true JPS48102988A (xx) | 1973-12-24 |
Family
ID=12445516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3557472A Pending JPS48102988A (xx) | 1972-04-07 | 1972-04-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS48102988A (xx) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120269A (xx) * | 1974-03-05 | 1975-09-20 | ||
| JPS50161177A (xx) * | 1974-06-17 | 1975-12-26 | ||
| JPS511082A (xx) * | 1974-06-14 | 1976-01-07 | Ibm | |
| US3954523A (en) * | 1975-04-14 | 1976-05-04 | International Business Machines Corporation | Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation |
| JPS5240985A (en) * | 1975-09-26 | 1977-03-30 | Matsushita Electric Ind Co Ltd | Method of forming porous silicon layer |
| JPS5357979A (en) * | 1976-11-06 | 1978-05-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its production |
| US4104090A (en) * | 1977-02-24 | 1978-08-01 | International Business Machines Corporation | Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation |
| JPS6450532A (en) * | 1987-08-21 | 1989-02-27 | Tokai Rika Co Ltd | Manufacture of silicon thin film |
| US5121633A (en) * | 1987-12-18 | 1992-06-16 | Nissan Motor Co., Ltd. | Semiconductor accelerometer |
-
1972
- 1972-04-07 JP JP3557472A patent/JPS48102988A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120269A (xx) * | 1974-03-05 | 1975-09-20 | ||
| JPS5632776B2 (xx) * | 1974-03-05 | 1981-07-30 | ||
| JPS511082A (xx) * | 1974-06-14 | 1976-01-07 | Ibm | |
| JPS50161177A (xx) * | 1974-06-17 | 1975-12-26 | ||
| US3954523A (en) * | 1975-04-14 | 1976-05-04 | International Business Machines Corporation | Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation |
| JPS51123581A (en) * | 1975-04-14 | 1976-10-28 | Ibm | Completely dielectric isolated semiconductor device and method of producing same |
| JPS5240985A (en) * | 1975-09-26 | 1977-03-30 | Matsushita Electric Ind Co Ltd | Method of forming porous silicon layer |
| JPS5357979A (en) * | 1976-11-06 | 1978-05-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its production |
| JPS5942979B2 (ja) * | 1976-11-06 | 1984-10-18 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US4104090A (en) * | 1977-02-24 | 1978-08-01 | International Business Machines Corporation | Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation |
| JPS6450532A (en) * | 1987-08-21 | 1989-02-27 | Tokai Rika Co Ltd | Manufacture of silicon thin film |
| US5121633A (en) * | 1987-12-18 | 1992-06-16 | Nissan Motor Co., Ltd. | Semiconductor accelerometer |