JPS48101381A - - Google Patents

Info

Publication number
JPS48101381A
JPS48101381A JP48020762A JP2076273A JPS48101381A JP S48101381 A JPS48101381 A JP S48101381A JP 48020762 A JP48020762 A JP 48020762A JP 2076273 A JP2076273 A JP 2076273A JP S48101381 A JPS48101381 A JP S48101381A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48020762A
Other languages
Japanese (ja)
Other versions
JPS5720279B2 (OSRAM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS48101381A publication Critical patent/JPS48101381A/ja
Publication of JPS5720279B2 publication Critical patent/JPS5720279B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2076273A 1972-03-03 1973-02-22 Expired JPS5720279B2 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23169572A 1972-03-03 1972-03-03

Publications (2)

Publication Number Publication Date
JPS48101381A true JPS48101381A (OSRAM) 1973-12-20
JPS5720279B2 JPS5720279B2 (OSRAM) 1982-04-27

Family

ID=22870296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2076273A Expired JPS5720279B2 (OSRAM) 1972-03-03 1973-02-22

Country Status (5)

Country Link
US (1) US3788890A (OSRAM)
JP (1) JPS5720279B2 (OSRAM)
DE (1) DE2310117A1 (OSRAM)
FR (1) FR2174864B1 (OSRAM)
GB (1) GB1370292A (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976535A (en) * 1975-05-27 1976-08-24 Bell Telephone Laboratories, Incorporated Screening seeds for quartz growth
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
GB8325544D0 (en) * 1983-09-23 1983-10-26 Howe S H Orienting crystals
JPS61151098A (ja) * 1984-12-24 1986-07-09 Shin Etsu Chem Co Ltd タンタル酸リチウム単結晶ウエ−ハ
US4908074A (en) * 1986-02-28 1990-03-13 Kyocera Corporation Gallium arsenide on sapphire heterostructure
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
US4857415A (en) * 1987-05-29 1989-08-15 Raytheon Company Method of producing single crystalline magnetic film having bi-axial anisotropy
US5156995A (en) * 1988-04-01 1992-10-20 Cornell Research Foundation, Inc. Method for reducing or eliminating interface defects in mismatched semiconductor epilayers
US6730987B2 (en) * 2001-09-10 2004-05-04 Showa Denko K.K. Compound semiconductor device, production method thereof, light-emitting device and transistor
JP4142332B2 (ja) * 2002-04-19 2008-09-03 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶シリコンの製造方法、単結晶シリコンウェーハの製造方法、単結晶シリコン製造用種結晶、単結晶シリコンインゴットおよび単結晶シリコンウェーハ
GB0611926D0 (en) * 2006-06-16 2006-07-26 Rolls Royce Plc Welding of single crystal alloys
CA3087726A1 (en) 2017-01-06 2018-07-12 Direct-C Limited Polymeric nanocomposite based sensor and coating systems and their applications

Also Published As

Publication number Publication date
US3788890A (en) 1974-01-29
FR2174864A1 (OSRAM) 1973-10-19
DE2310117A1 (de) 1973-09-06
GB1370292A (en) 1974-10-16
JPS5720279B2 (OSRAM) 1982-04-27
FR2174864B1 (OSRAM) 1977-04-22

Similar Documents

Publication Publication Date Title
FR2174864B1 (OSRAM)
JPS4941630A (OSRAM)
JPS516236B2 (OSRAM)
JPS5318116B2 (OSRAM)
JPS549319B2 (OSRAM)
JPS5142839B2 (OSRAM)
JPS4925894U (OSRAM)
CS156824B1 (OSRAM)
CS158175B2 (OSRAM)
JPS4942578U (OSRAM)
JPS5344389Y2 (OSRAM)
JPS5212476Y2 (OSRAM)
JPS5149108Y2 (OSRAM)
JPS5037278B2 (OSRAM)
CS157940B1 (OSRAM)
CS156047B1 (OSRAM)
CS156988B1 (OSRAM)
CS153904B1 (OSRAM)
CS154520B1 (OSRAM)
CS158347B1 (OSRAM)
CS155646B1 (OSRAM)
CS155932B1 (OSRAM)
CS155941B1 (OSRAM)
CS157006B2 (OSRAM)
JPS4992395U (OSRAM)