JPS479402A - - Google Patents

Info

Publication number
JPS479402A
JPS479402A JP8503571A JP8503571A JPS479402A JP S479402 A JPS479402 A JP S479402A JP 8503571 A JP8503571 A JP 8503571A JP 8503571 A JP8503571 A JP 8503571A JP S479402 A JPS479402 A JP S479402A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8503571A
Other languages
Japanese (ja)
Other versions
JPS5724707B1 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS479402A publication Critical patent/JPS479402A/ja
Publication of JPS5724707B1 publication Critical patent/JPS5724707B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Electronic Switches (AREA)
JP8503571A 1970-10-26 1971-10-26 Pending JPS5724707B1 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8392370A 1970-10-26 1970-10-26

Publications (2)

Publication Number Publication Date
JPS479402A true JPS479402A (en:Method) 1972-05-15
JPS5724707B1 JPS5724707B1 (en:Method) 1982-05-25

Family

ID=22181535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8503571A Pending JPS5724707B1 (en:Method) 1970-10-26 1971-10-26

Country Status (7)

Country Link
US (1) US3683193A (en:Method)
JP (1) JPS5724707B1 (en:Method)
CA (1) CA950049A (en:Method)
DE (1) DE2153306C3 (en:Method)
FR (1) FR2111846B1 (en:Method)
GB (2) GB1370450A (en:Method)
NL (1) NL172110C (en:Method)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
NL170480C (nl) * 1971-03-19 1982-11-01 Philips Nv Opnemer voor het omzetten van een twee-dimensionaal fysisch patroon in een televisiesignaal.
US3890633A (en) * 1971-04-06 1975-06-17 Rca Corp Charge-coupled circuits
US3805062A (en) * 1972-06-21 1974-04-16 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
US3810126A (en) * 1972-12-29 1974-05-07 Gen Electric Recirculation mode analog bucket-brigade memory system
US3786265A (en) * 1973-02-02 1974-01-15 Lindly Company Inc Apparatus for detecting defects in continuous traveling material
US3801820A (en) * 1973-02-09 1974-04-02 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
US3845295A (en) * 1973-05-02 1974-10-29 Rca Corp Charge-coupled radiation sensing circuit with charge skim-off and reset
US3801821A (en) * 1973-06-14 1974-04-02 Sun Chemical Corp Large field flash sensor
NL7311429A (nl) * 1973-08-20 1975-02-24 Philips Nv Opneeminrichting uitgevoerd met informatie- opneemplaatsen in een halfgeleiderlichaam.
FR2244321A1 (en:Method) * 1973-09-14 1975-04-11 Thomson Brandt
US3886359A (en) * 1974-01-04 1975-05-27 Texas Instruments Inc Time interval compression address sequentially
US4025910A (en) * 1975-01-23 1977-05-24 Massachusetts Institute Of Technology Solid-state camera employing non-volatile charge storage elements
DE2543083C3 (de) * 1975-09-26 1979-01-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bildsensor sowie Verfahren zum Betrieb eines solchen Bildsensors
DE2543627A1 (de) * 1975-09-30 1977-04-14 Siemens Ag Optoelektronischer sensor und verfahren zu seinem betrieb
US4219736A (en) * 1975-11-14 1980-08-26 National Computer Systems, Inc. Apparatus for photoelectrically reading a translucent answer document having a bias bar printed thereon
US4087833A (en) * 1977-01-03 1978-05-02 Reticon Corporation Interlaced photodiode array employing analog shift registers
JPS5389617A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Driving method of solid image pickup element
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
FR2430696A1 (fr) * 1978-07-06 1980-02-01 Ebauches Sa Diviseur de frequence integre
US4242700A (en) * 1979-01-22 1980-12-30 Rca Corporation Line transfer CCD imagers
US4281254A (en) * 1979-07-02 1981-07-28 Xerox Corporation Self scanned photosensitive array
FR2469805A1 (fr) * 1979-11-09 1981-05-22 Thomson Csf Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice
JPS5847204A (ja) * 1981-09-16 1983-03-18 Fuji Electric Corp Res & Dev Ltd 微小領域検出器
US5315114A (en) * 1981-12-18 1994-05-24 Texas Instruments Incorporated Integrated circuit detector array incorporating bucket brigade devices for time delay and integration
JPS5932250A (ja) * 1982-08-16 1984-02-21 Fuji Xerox Co Ltd 原稿読取装置
US4523326A (en) * 1983-01-17 1985-06-11 Hughes Aircraft Company Low noise charge coupled imager circuit
EP0130103A1 (en) * 1983-06-21 1985-01-02 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Charge-coupled device image sensor and method for asynchronous readout
FR2583602B1 (fr) * 1985-06-18 1988-07-01 Centre Nat Rech Scient Retine integree a reseau de processeurs
US4686574A (en) * 1986-04-04 1987-08-11 Rca Corporation Line-sequential read out of a phototsensor array via a CCD shift register clocked at a multiple of pixel scan rate
JP3630894B2 (ja) 1996-12-24 2005-03-23 株式会社半導体エネルギー研究所 電荷転送半導体装置およびその作製方法並びにイメージセンサ
US6459077B1 (en) 1998-09-15 2002-10-01 Dalsa, Inc. Bucket brigade TDI photodiode sensor
GB2343577B (en) * 1998-11-05 2001-01-24 Simage Oy Imaging device
JP2004519147A (ja) * 2001-02-08 2004-06-24 レイセオン・カンパニー ２方向可能なバケットブリゲード回路
GB2438445A (en) * 2006-05-26 2007-11-28 Thales Holdings Uk Plc A sample-and-hold circuit for microwave signals, using photoconductive switches
EP2316221A1 (en) * 2008-08-28 2011-05-04 MESA Imaging AG Demodulation pixel with daisy chain charge storage sites and method of operation therefor
US10347681B2 (en) 2016-02-19 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Imaging device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289010A (en) * 1963-11-21 1966-11-29 Burroughs Corp Shift register
US3493812A (en) * 1967-04-26 1970-02-03 Rca Corp Integrated thin film translators

Also Published As

Publication number Publication date
FR2111846A1 (en:Method) 1972-06-09
US3683193A (en) 1972-08-08
FR2111846B1 (en:Method) 1975-09-26
NL7114637A (en:Method) 1972-04-28
NL172110B (nl) 1983-02-01
NL172110C (nl) 1983-07-01
GB1370449A (en) 1974-10-16
GB1370450A (en) 1974-10-16
DE2153306B2 (de) 1973-08-30
DE2153306A1 (de) 1972-04-27
CA950049A (en) 1974-06-25
JPS5724707B1 (en:Method) 1982-05-25
DE2153306C3 (de) 1974-03-21

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