JPH1197416A - Method and equipment for ion beam projection processing and method for correcting mask defect - Google Patents

Abstract

PROBLEM TO BE SOLVED: To immediately etch or deposition-process a discretionary fine pattern by image-forming an aperture image, which is obtained from a blanking array, by reduced projection for a subject to be processed by using a second optical system and processing the subject. SOLUTION: Ion beams 102, which are from an ion source 101 and are made into almost parallel beams by a collimate lens 103, are applied to a blanking array 104 which is controlled by a blanking array controller 119 based on the information related to a blanking pattern. The ion beams passed through the one point 126 of the blanking array 104 are focused on a corresponding point 128 on a reference, after passing through lenses 105a-105c, a blanking aperture 106 and lenses 107a-107c. In the same manner, the ion beams passed through outer points of the blanking array 104 are focused on other corresponding points on the reference. In this manner, an image is formed and projected on the reference plane of the blanking array 104, and etching or deposition processing is performed by the image-forming projection ion beams.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for forming a pattern by irradiating a sample with ion beams extracted from a high-luminance ion source.

[0002]

2. Description of the Related Art As a prior art relating to an apparatus and a method for forming a pattern by irradiating a sample with an ion beam extracted from a high-luminance ion source, Japanese Patent Application Laid-Open No. Hei 8-21335 is disclosed.
No. 0 (prior art 1) and JP-A-8-22217
No. 5 (prior art 2) is available. In the prior arts 1 and 2, an ion beam extracted from a gallium liquid metal ion source is converted into a nearly parallel beam by a collimating lens and irradiated to a forming aperture. A reduced projection image of the aperture of the aperture is formed thereon, and the sample is processed into this shape. However, in order to process an arbitrary figure based on the reduced projection image of the aperture of the aperture, the aperture 204 must be replaced each time, which is substantially difficult.

As a prior art related to a charged particle beam exposure method using a blanking aperture array and an apparatus therefor, there is JP-A-3-174715 (prior art 3). The prior art 3 includes a charged particle beam passing through an aperture with a voltage applied to the blanking electrode using a blanking aperture array having a substrate in which apertures with blanking electrodes are two-dimensionally arranged in at least m rows and n columns. In the charged particle beam exposure for exposing the exposure target on the stage with the charged particle beam patterned by turning on / off the blanking aperture array, m sets of the apertures in the j-th column are connected to the blanking electrodes. This document describes that n shift registers of m bits for applying a voltage in accordance with pattern data of a figure to be exposed are provided. As a prior art relating to a charged particle beam exposure method using a stencil mask instead of an aperture and an apparatus therefor, see Japanese Patent Application Laid-Open No. 4-5 / 1993.
No. 8518 (prior art 4). In the prior art 4, a stencil mask having a plurality of block pattern regions is used to selectively irradiate one block pattern region with a charged particle beam, and irradiate the passed charged particle beam onto a wafer to perform pattern drawing. Block exposure, wherein at least one of the block pattern areas has a plurality of separated openings that form a dispersion pattern when transferred onto a wafer, each of which has a blanking electrode. At the time of exposure, a charged particle beam exposure method is described in which a controlled signal is applied to a blanking electrode of each opening in accordance with a pattern to be exposed, and a pattern corresponding to only the selected opening is exposed on a wafer. ing.

[0004]

There has been a demand for reducing the size of an arbitrary pattern by ion beam irradiation and immediately performing ultra-fine etching or deposition. By the way, according to the prior arts 1 and 2, an arbitrary ultrafine pattern cannot be immediately subjected to etching or deposition. On the other hand, the prior arts 3 and 4 merely suggest an exposure technique using a charged particle beam. That is, the prior arts 3 and 4 did not sufficiently consider that any pattern by ion beam irradiation was reduced and projected to immediately perform ultra-fine etching or deposition. Further, in prior arts 3 and 4, relative positions of a pattern formed on a workpiece to be subjected to ultrafine etching or deposition by ion beam irradiation and a blanking pattern generated from a blanking array are described. The matching was not sufficiently considered. Further, in the blanking array, sufficient consideration has not been given to the resistance to ion beam irradiation that enables etching and the like.

[0005] An object of the present invention is to solve the above problems.
Ion beam projection that can use a blanking array that receives ion beam irradiation to reduce and project an arbitrary pattern, such as an arbitrary figure, onto an object to be processed and immediately etch or deposit an arbitrary fine pattern. A processing method and an apparatus therefor are provided. Another object of the present invention is to reduce a pattern such as an arbitrary figure by accurately aligning a workpiece with a workpiece based on a secondary particle image by using a blanking array receiving irradiation of an ion beam. It is an object of the present invention to provide an ion beam projection processing method and an apparatus capable of projecting an arbitrary fine pattern and immediately performing an etching process or a deposition process.

Another object of the present invention is to reduce the size of an arbitrary figure by projecting an arbitrary pattern such as a figure on a workpiece by using a blanking array having resistance to ion beam irradiation. It is an object of the present invention to provide an ion beam projection processing method and an apparatus capable of immediately performing an etching process or a deposition process on a pattern. Another object of the present invention is to use a blanking array for ion beam irradiation to reduce and project a pattern such as an arbitrary figure or the like conforming to the shape of a fine defect pattern, thereby forming an arbitrary fine pattern on a mask. It is an object of the present invention to provide a method for correcting a defect of a mask which can immediately perform an etching process or a deposition process on a defect pattern.

[0007]

In order to achieve the above object, the present invention provides an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and Electrodes for irradiating the substantially parallel beam converted by the first optical system and deflecting the ion beam are two-dimensionally arranged and provided with a control element for controlling the potential or current to each electrode. A blanking array, a second optical system for reducing and projecting an aperture image by an ion beam formed by the blanking array on a workpiece to form an image, and the control element provided on the blanking array A blanking array control system that obtains an aperture image by controlling a potential or a current to each electrode by controlling the blanking array control system. The aperture image obtained from the king array is reduced and projected onto the workpiece by the second optical system to form an image, and the workpiece is processed (etching or deposition). Is an ion beam projection processing apparatus.

Further, the present invention provides an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and a substantially parallel beam converted by the first optical system. A blanking array formed by two-dimensionally arranging electrodes for receiving the beam irradiation and deflecting the ion beam and including a control element for controlling a potential or a current to each electrode, and a blanking array formed by the blanking array A second optical system for reducing and projecting an aperture image formed by the ion beam on a workpiece to form an image, and controlling the control element provided on the blanking array to control the potential or current to each electrode. Array control system for controlling aperture and obtaining aperture image, and gas supply for supplying reactive gas or film forming gas near the ion beam irradiation position on the workpiece The aperture image obtained from the blanking array under the control of the blanking array control system is reduced and projected on the workpiece by the second optical system, and is supplied by the gas supply system. An ion beam projection processing apparatus configured to process (etch or deposit) a workpiece using a reactive gas or a deposition gas.
The present invention also provides an ion source, a first optical system that converts an ion beam extracted from the ion source into a substantially parallel beam, and irradiation of the substantially parallel beam converted by the first optical system. And a two-dimensional array of electrodes for deflecting the ion beam, a blanking array formed with a control element for controlling the potential or current to each electrode, and an ion formed by the blanking array. A second optical system for reducing and projecting an aperture image by a beam on a workpiece to form an image, and reducing and projecting an aperture-passed image by an ion beam having passed through the blanking array onto the workpiece. A second optical system, and controlling the control element provided on the blanking array to control the potential or current to each electrode to obtain an aperture image; A blanking array control system for sequentially controlling the electrodes arranged by controlling the control element to obtain a scanning ion beam; and a second scanning ion beam obtained from the blanking array under the control of the blanking array control system. A secondary particle detecting means for detecting secondary particles obtained from the workpiece by irradiating the workpiece with the optical system, and displaying an image based on the secondary particles detected by the secondary particle detecting means Display means for observing an image based on secondary particles obtained from the workpiece displayed by the display means, and controlling an aperture image obtained from the blanking array under the control of the blanking array control system to the second image. An ion beam projection processing apparatus characterized in that the optical system is configured to process the object by reducing and projecting the image on the object.

The present invention also provides an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and a substantially parallel beam converted by the first optical system. A blanking array formed by two-dimensionally arranging electrodes for receiving the beam irradiation and deflecting the ion beam and including a control element for controlling a potential or a current to each electrode, and a blanking array formed by the blanking array A second optical system for reducing and projecting an aperture image formed by the ion beam on a workpiece to form an image, and controlling the control element provided on the blanking array based on information on a blanking pattern. Controls the potential to each electrode to obtain an aperture image, and further controls the array of electrodes by controlling the above-mentioned control elements to sequentially control the scanning ion beam. And a secondary ion beam obtained from the workpiece by irradiating the workpiece with the scanning ion beam obtained from the blanking array under the control of the blanking array control system by the second optical system. Secondary particle detecting means for detecting particles, and information relating to the blanking pattern is created from an image signal based on the secondary particles detected by the secondary particle detecting means and input or fed back to the blanking array control system. Image processing means for processing the workpiece by reducing and projecting an aperture image obtained from the blanking array on the workpiece by the second optical system under the control of the blanking array control system. And an ion beam projection processing apparatus characterized in that

Further, the present invention provides an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and irradiation of the parallel beam converted by the first optical system. , An electrode for deflecting the ion beam is two-dimensionally arranged, a blanking array formed with a control element for controlling the potential or current to each electrode, and an ion beam formed by the blanking array A second optical system for reducing and projecting the aperture image on the workpiece to form an image, and controlling each of the control elements provided on the blanking array based on information on a blanking pattern to control each electrode. Array control system that obtains an aperture image by controlling the potential or current to the workpiece, and input design information of the workpiece or inspection information of the workpiece Or image processing means for creating information on the blanking pattern based on image information of a pattern formed on a workpiece and inputting or feeding back the information to the blanking array control system. An ion beam characterized in that an aperture image obtained from a blanking array under the control of the system is reduced and projected onto the workpiece by the second optical system to form an image, thereby processing the workpiece. It is a projection processing device. The present invention also provides an ion source, a first optical system that converts an ion beam extracted from the ion source into a substantially parallel beam, and receives irradiation of the substantially parallel beam converted by the first optical system. A blanking array formed by two-dimensionally arranging electrodes for deflecting an ion beam and including a control element for controlling a potential or a current to each electrode, and an aperture formed by the ion beam formed by the blanking array. A second optical system for reducing and projecting an image on a workpiece to form an image, and controlling the control element provided on the blanking array based on information on a blanking pattern to control each electrode. Controlling the potential or current to obtain an aperture image, and controlling the above-mentioned control elements to sequentially control (eg, turn off) the arranged electrodes for scanning. A blanking array control system for obtaining an on-beam, and a scanning ion beam obtained from the blanking array under the control of the blanking array control system, irradiating the workpiece with the second optical system to obtain a beam obtained from the workpiece. Secondary particle detecting means for detecting secondary particles, an image signal based on the secondary particles detected from the secondary particle detecting means, and input design information of the workpiece or inspection information of the workpiece or the workpiece Image processing means for comparing the image information of the pattern formed above with the information on the blanking array based on the comparison result, and inputting or feeding back to the blanking array control system; The aperture image obtained from the blanking array under the control of the ranking array control system is reduced and projected onto the workpiece by the second optical system. An ion beam projection processing apparatus characterized by being configured to process the workpiece is imaged Te.

Further, according to the present invention, in the blanking array in the above-mentioned ion beam projection processing apparatus, the two-dimensionally arranged electrodes are formed by a pair of opposed electrodes,
An opening for passing an ion beam is formed between the pair of opposed electrodes. Further, the present invention is characterized in that, in the blanking array in the ion beam projection processing apparatus, each electrode, a control element for controlling each electrode, and a wiring pattern including a power supply line and a signal line are formed in a laminated structure. I do. Further, according to the present invention, in the blanking array in the ion beam projection processing apparatus, when a voltage is applied to each electrode by the control element to each electrode arranged two-dimensionally, a capacitor ( (Condenser). Further, the present invention is characterized in that in the blanking array in the above-mentioned ion beam projection processing apparatus, each electrode is formed of a metal material (for example, Mo, W, or the like) which is not easily sputtered by an ion beam. Further, according to the present invention, in the ion beam projection processing apparatus, each electrode in the blanking array,
It is characterized in that it is formed so as to be covered with at least a metal material (for example, Mo, W, or the like) which is not easily sputtered by an ion beam. Further, according to the present invention, the first optical system converts the ion beam extracted from the ion source into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam by two electrodes. The aperture image formed by controlling the potential or current to each electrode with respect to the blanking array arranged in a three-dimensional manner and passing through the blanking aperture is formed on the workpiece by the second optical system. An ion beam projection processing method characterized in that an object to be processed is etched or deposited by reducing and projecting an image.

Further, according to the present invention, the first optical system converts an ion beam extracted from an ion source into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam. An aperture image formed by controlling a potential or a current to each electrode with respect to a blanking array in which electrodes are two-dimensionally arranged and passing through a blanking aperture is covered by the second optical system. An ion beam projection processing method characterized in that a workpiece in a reactive gas atmosphere is subjected to a reactive etching process by reducing and projecting an image on a workpiece to form an image. Further, according to the present invention, the first optical system converts the ion beam extracted from the ion source into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam by two electrodes. The aperture image formed by controlling the potential or current to each electrode with respect to the blanking array arranged in a three-dimensional manner and passing through the blanking aperture is formed on the workpiece by the second optical system. An ion beam projection processing method is characterized in that an object to be processed in a gas atmosphere for film formation is subjected to deposition processing by reducing and projecting an image on the substrate. Also,
According to the present invention, the first optical system converts an ion beam extracted from an ion source into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam in a two-dimensional manner. A scanning ion beam is obtained by sequentially controlling the arrayed electrodes with respect to the blanking array arranged in the manner described above, and is irradiated onto the workpiece by the second optical system, and is obtained from the workpiece by the secondary particle detection means. Detecting secondary particles to be detected and observing an image based on the detected secondary particles.
And converting the ion beam extracted from the ion source into a substantially parallel beam by the first optical system, irradiating the converted substantially parallel beam, and deflecting the ion beam in a two-dimensional manner. An ion beam formed by controlling the potential or current to each of the electrodes based on the secondary particle image observed in the first step with respect to the blanking array arranged in the above, and passing through a blanking aperture Beam projection processing by etching and depositing the workpiece by reducing and projecting the aperture image by the second optical system onto the workpiece by the second optical system. Is the way.

Further, according to the present invention, the first optical system converts an ion beam extracted from an ion source into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam. For a blanking array in which the electrodes are two-dimensionally arranged, the arranged electrodes are sequentially controlled (for example, off-controlled) to obtain a scanning ion beam and irradiate the workpiece with a second optical system to illuminate the workpiece. A first step of detecting secondary particles obtained from the workpiece by the secondary particle detection means and creating information on a blanking pattern based on an image signal based on the detected secondary particles; The first optical system converts the converted ion beam into a substantially parallel beam, receives irradiation of the converted substantially parallel beam, and two-dimensionally arranges electrodes for deflecting the ion beam. An aperture formed by controlling the potential or current to each of the electrodes based on the information on the blanking pattern created in the first step with respect to the blanking array, and the ion beam having passed through the blanking aperture. A second step of reducing and projecting the image on the workpiece by the second optical system to form an image and etching or depositing the workpiece. is there. The present invention also provides a first step of creating information relating to a blanking pattern based on design information of a workpiece, inspection information of the workpiece, or image information of a pattern formed on the workpiece. A first optical system converts an ion beam extracted from a source into a substantially parallel beam, receives the converted substantially parallel beam, and two-dimensionally arranges electrodes for deflecting the ion beam. The aperture image formed by controlling the potential or current to each of the electrodes based on the information on the blanking pattern created in the first step for the array, and the aperture image formed by the ion beam passing through the blanking aperture. A second optical system configured to project and reduce an image on the workpiece by forming a reduced image on the workpiece to perform etching or deposition processing; An ion beam projection processing method characterized by having a step.

According to the present invention, the first optical system converts the ion beam extracted from the ion source into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam. For a blanking array in which the electrodes are two-dimensionally arranged, the arranged electrodes are sequentially controlled (for example, off-controlled) to obtain a scanning ion beam and irradiate the workpiece with a second optical system to illuminate the workpiece. Secondary particles obtained from the workpiece are detected by the secondary particle detection means, and an image signal based on the detected secondary particles and design information of the workpiece or inspection information of the workpiece or formed on the workpiece. A first step of creating information about a blanking pattern by comparing the image information of the extracted pattern with the image information of the pattern, and a beam almost parallel to the ion beam extracted from the ion source by the first optical system. The blanking pattern formed in the first step with respect to the blanking array in which the electrodes that receive the converted substantially parallel beam and deflect the ion beam are two-dimensionally arranged. The aperture image formed by controlling the potential or current to each electrode based on the information and passing through the blanking aperture is reduced and projected on the workpiece by the second optical system to form an image. And a second step of etching or depositing the workpiece to be processed.

Further, according to the present invention, the first optical system converts the ion beam extracted from the ion source into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam. A second optical system masks an aperture image formed by controlling a potential or a current to each electrode with respect to a blanking array in which electrodes are two-dimensionally arranged, and which is formed by an ion beam passing through a blanking aperture. A defect correction method for a mask, comprising reducing and projecting an image on an upper defective portion to form an image, and correcting the defective portion by etching or deposition. Further, the present invention provides an ion beam projection processing method for processing an object by projecting an image of an aperture through which an ion beam passes, wherein the aperture is constituted by a blanking array in which electrodes are two-dimensionally arranged, By sequentially turning off the arranged electrodes (sequentially scanning the ion beam passing point in the blanking off state (ion beam ON state)), the ion beam irradiated on the workpiece through the blanking array Is scanned, and secondary particles generated from the workpiece by the scanning are detected to obtain a secondary particle image of the workpiece. Further, the present invention is characterized in that a processing region for processing a workpiece by the blanking array is set based on the secondary particle image. Further, the present invention is characterized in that a processing region for processing a workpiece by the blanking array is set based on a contour extracted by performing image processing on the secondary particle image. In addition, the present invention provides the above-described blanking array with a processing region for processing a workpiece.
It is set based on a result of comparison between a result of image processing of a secondary particle image and a design pattern of the workpiece.
Further, the present invention is characterized in that a blanking pattern corresponding to a processing region where a workpiece is processed by the blanking array is generated in the blanking array.

As described above, according to the above configuration,
Using a blanking array that receives the irradiation of an ion beam, an arbitrary pattern such as a figure can be reduced and projected onto a workpiece, and an arbitrary fine pattern can be immediately etched or deposited. Further, according to the above configuration, by using the blanking array receiving the irradiation of the ion beam, the workpiece is accurately aligned based on the secondary particle image, and a pattern such as an arbitrary figure is reduced and projected. Thus, any fine pattern can be immediately etched or deposited. Further, according to the above configuration, by using a blanking array having resistance to ion beam irradiation, a pattern such as an arbitrary figure is reduced and projected onto a workpiece to immediately etch an arbitrary fine pattern. Processing or deposition processing can be performed. Further, according to the above configuration, a pattern such as an arbitrary figure conforming to the shape of the fine defect pattern is reduced and projected by using a blanking array for ion beam irradiation, and any fine defect pattern on the mask is projected. Can be corrected immediately by etching or depositing.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of an ion beam projection processing method and apparatus for performing etching or deposition processing by ion beam irradiation according to the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram showing an embodiment of an ion beam projection processing apparatus for performing an etching process or a deposition process by ion beam irradiation according to the present invention. High brightness ion source 10
Although the ion beam 102 extracted from 1 has a large divergence angle, it is made to be almost a parallel beam (converted) by the collimating lens 103, and is controlled by the blanking array controller 119 based on information on the blanking pattern. Blanking array 104
Is irradiated. Here, each blanking electrode of the blanking array 104 is applied with or without a blanking voltage (potential) or current according to information (for example, image information) on a blanking pattern of the blanking array controller 119. Therefore, for example, the ion beam that has passed through the applied 104 a reaches 106 a on the blanking aperture 106 and is blocked, and does not reach the sample 113. On the other hand, the ion beam that has passed without receiving blanking by the blanking array 104 is focused on the closing portion 109 of the flanking aperture 106 by the lens 105,
Thereafter, the image is projected again by the lens 107 to form an image 112 of the blanking array 104 on the sample 113.
That is, the ion beam passing through one point 126 of the blanking array 104 is transmitted to the lenses 105a, 105b,
5c, blanking aperture 106, lens 107
After passing through a, 107b and 107c, it is focused to the corresponding point 128 on the sample. Similarly, ion beams passing through other points in the blanking array 104 are focused to corresponding different points on the sample (workpiece). In this manner, image projection of the blanking array 104 onto the sample surface is performed.
Then, etching or deposition is performed by the ion beam that has been formed and projected.

Here, as shown in FIG. 2, the blanking array 104 requires the region of the support plate 301 including the electrodes 304 and 305 and the wiring region, so that the ion beam reaching these portions is blocked. Therefore, it does not reach the imaging plane. On the other hand, by placing the sample 113 on a surface slightly away from the accurate image formation plane, the image spreads as shown in FIG. 4 and the area where the ion beam does not reach on the sample can be reduced. . Here, A shown in FIG. _{4 '1 ~A' N, B} '1 ~B' N, C '1 ~C' N ···
Are images of A _{1 to} A _N , B _{1 to} B _N , C _{1 to} C _N ... Shown in FIG. The blanking array control circuit 119 is controlled based on information on a blanking pattern (corresponding to a processing area on a workpiece) based on image information obtained by the image processing device 122. Image processing device 122
May be design information from an external CAD system, original image information of a processed pattern from a defect inspection apparatus, defect pattern information from a scanned ion image, or the like. Further, at the time of ion beam irradiation, a reactive gas such as XeF ₂ , Cl ₂ , H _20, etc.
Alternatively, reactive etching, devotion, or the like by ion beam irradiation may be performed by spraying a film forming gas such as an organic metal compound such as Mo (CO) ₆ or W (CO) ₆ or an organic nonmetal compound such as TEOS. it can. The gas nozzle 124 is moved to an optimal position by a nozzle driving and positioning mechanism 125 controlled by the control device 123. The gas flow rate adjusting mechanism 126 controlled by the control device 123 adjusts the gas flow rate flowing out of the nozzle 124. In addition, a secondary particle detector 114, a deflector power supply 116, and a deflector 108 are provided for observing an image of the sample.
Change the voltage applied to 107 and aligner 124
By adjusting the optical axis, the scanned ion image can be detected on the monitor 115 without changing the optical axis. Information such as a defect pattern obtained thereby is sent to the image processing device 122. In this embodiment,
If the space between the lens 103 and the lens 105 is a deceleration space, the energy of the ion beam incident on the blanking array 104 can be reduced, and damage to the blanking array caused by the irradiation of the ion beam can be reduced. Also, the deflection sensitivity of the flanking electrodes 304 and 305 can be increased. In this case, the blanking array 104 needs to be floated at a certain potential instead of the ground potential.

When observing the image of the sample, in addition to changing and controlling the lens voltage as described above to make the sample surface the focal plane, the following method can be used. As shown in FIG. 5, one blanking electrode of the blanking array 104 is in an off state (an on state in which an ion beam passes).
In all other cases, the ion beam is turned on so that the ion beam does not reach the sample. If the opened blanking electrodes are sequentially controlled to be turned off to scan and form a scanned ion beam, the opened portion (ion beam) on the sample is sequentially scanned, and the secondary particle detector is scanned. At 114, a scanned ion image is detected. In this case, there is no need to change the lens voltage that can be applied to the lenses 103, 105, and 107, and it is not necessary to adjust the optical axis. In the apparatus described above, the driving device 121 for the ion source 101, the power source 120 for the lens 103, the power source 118 for the lens 105, the power source 117 for the lens 107, the driving device 125 for the aligner 124, and the power source for the deflector 108 11
6, the monitor 115, the image processing device 122, the blanking array control device 119, the gas nozzle driving / positioning mechanism 125, the gas flow adjusting device 126, etc. are all under the control of the control device 123.

Examples of the numerical values are as follows: the spacing between blanking electrode pairs 304 and 305 is about 5 to 15 microns; the spacing between adjacent blanking electrode pairs is about 10 to 20 microns.
Accelerating voltage 10-5 between ion source 101 and sample 113
About 0 kV, the blanking electrode 30 in the deceleration space
Acceleration voltage of ion beam incident on 4,305 0.5 to
A reduction projection of about (1/20) to (1/100) is performed on the surface of the blanking array 104 by an optical system at about 3 kV and a blanking electrode applied voltage of about 3 to 10 V. It is theoretically possible to obtain a resolution of about 0.5 microns. FIG. 2 shows the blanking array 104. This means that many blanking electrodes
They are arranged in a dimension. Blanking array 104
Is provided with a rectangular opening 303 in the insulating support plate 301 so as to correspond to each blanking electrode, and the electrodes 304 and 305 constituting each blanking electrode are installed facing each other.
Control elements (transistors) 704A, 703A for turning on / off the application of the supplied voltage to each blanking electrode;
703B and 704B. Each blanking electrode constituted by these counter electrodes 304 and 305 is connected to a power supply 130 and a blanking array control unit 119.
And the wiring in the blanking array,
It is housed inside the support plate 301. The blanking array 104 includes a large number of blanking electrodes 2 of the same configuration.
The ion beam, which is arranged (arranged) in a dimension and incident on the paper from above perpendicularly, is applied to each pair of blanking electrodes 304 and 305.
When passing through the opening 303 between the blanking electrodes 304 and 305, it is bent or passes in the same direction according to whether or not the positive and negative voltages are applied by turning on the control element (transistor). . Since the voltage of each of the blanking electrodes 304 and 305 is independently controlled, the direction of the ion beam passing through each opening is independently controlled.

In this case, the blanking electrodes 304, 30
By using a metal which is not easily sputtered by an ion beam, such as molybdenum or tungsten, as the material of No. 5, the life of the blanking electrodes 304 and 305 can be extended. As shown in FIG. 3, a cover 307 having a window 306 that covers the blanking electrodes 304 and 305 is formed of a metal material, such as molybdenum or tungsten, which is not easily sputtered by an ion beam. By covering the blanking electrodes 304 and 305 via an insulating film,
4,305 are not directly irradiated with the ion beam, and the life of the blanking electrodes 304,305 can be extended. In this case, the cover 307 is made of a metal material such as tungsten or molybdenum, and is grounded to the ground potential of the blanking electrode. Influence on the electric field can be reduced.
Here, wiring to each electrode is an issue. For independent control, an independent wiring is connected to each of the blanking electrodes. For example, in the case of an array of 100 × 100 pairs of blanking electrodes, the number of wirings is 20,000, and 301 in FIG.
It is necessary to arrange 100 to 200 wirings in the wiring space as shown by (1), which causes considerable difficulty in structure and control. To solve this problem, the following method can be used to greatly reduce the number of wirings. FIG. 6 is a diagram showing one embodiment of the blanking array 104 and a part of the wiring thereof. According to this embodiment, each of the wirings formed in the wiring space is, for example, 601,
As indicated by reference numeral 602, the number is about four. FIG. 7 is a detailed view of FIG. Blanking electrodes 701A, 701
702A and 702B are formed adjacent to B. As the wiring, signal lines 705 and 706, a negative voltage line 707, and a ground line (earth line) 708 are laid in the horizontal direction. As the wiring, the signal line 7 is provided in the vertical direction.
13, 714, a + voltage line 715, and a ground line (earth line) 716 are wired. Since the ground line 708 and the ground line 716 can be shared, one of them can be deleted. Then, the signal line 705 and the signal line 714, and the signal line 706 and the signal line 71
4. A transistor (control element) 7 is provided at each intersection of the signal lines 705 and 713 and the signal line 706 and the signal line 713.
04A, 703A, 703B, and 704B are provided.

Considering the case where a positive voltage is generated on the tenth electrode 701A, both the horizontal signal line 706s and the vertical signal line 714p are set to the HIGH state to turn on the transistor 703A and turn on the capacitor (capacitor).
702A is connected to the voltage line 707 and the capacitor 702
A positive voltage is generated at blanking electrode 701A through A. Then, a signal line 706s and a signal line 714p
Is in a LOW state and the transistor 703A is turned off, the blanking electrode 701A keeps its potential. After that, when both the signal line 705r and the signal line 714p become HIGH, the blanking electrode 701 is turned on by the operation of turning on the transistor 704A.
A is connected to the ground line (earth line) 708 to perform discharging, and as a result, the voltage of the capacitor 702A and the voltage of the blanking electrode 701A become zero.

A blanking electrode 701B opposed thereto
The same applies to generation of a negative voltage to capacitor (capacitor) 702B. That is, the negative electrode 701B
Considering the case where a negative voltage is generated on both the horizontal signal line 705t and the vertical signal line 713q,
When the transistor 703B is turned on in the GH state, the capacitor 702B is connected to the + voltage line 715,
Blanking electrode 701B through capacitor 702B
To generate a negative potential. Then, the signal line 713q and the signal line 705t enter a LOW state, and the transistor 70
Even if 3B is turned off, capacitor 703B will continue to maintain that voltage. After that, the signal line 706u,
When both the signal line 713q and the signal line 713q become HIGH, the blanking electrode 701B is connected to the ground line (earth line) 716 or 708 by the ON operation of the transistor 704B, and the capacitor 7 is discharged.
03B and the voltage of the blanking electrode 701B become 0. By arranging a large number of wirings, electrodes, and capacitors having such a configuration and operation on a plane in an array, the state of the blanking array 104 can be controlled with fewer signal lines by scanning signals. That is, FIG.
, The blanking array control device 119 sets the electrode pairs for inputting the blanking voltage control signal to A ₁ , A ₂ , A ₃ ,... Based on the information on the blanking pattern based on the image information from the image processing device 122.・ ・ 、
_{B 1, B 2, B 3} , ···, C 1, C 2, C 3 ··· and sequentially scan control, each blanking electrode pairs based on the information on the blanking pattern based on the image information state And This state is maintained by the capacitors 702A and 702B even after the scanning signal has passed. Next, the blanking array control device 119 applies A ₁ , A ₂ , A ₃ ,..., B ₁ , B ₂ , B ₁ ,.
.., C ₁ , C ₂ , C ₃ ... Are input in this order, and the capacitors 702A, 702B are discharged, and then the next blanking voltage control signal is input. This is repeated below. By doing so, each blanking electrode pair can maintain a constant state while scanning signals. Further, the state can be changed for each scan. In this embodiment, 100
Approx. 800 to control × 100 blanking electrode pairs
It is sufficient to use a single wiring, and a great reduction can be achieved.

Next, an embodiment of a method of manufacturing the blanking array 104 will be described with reference to FIGS. 8, 9 and 10. FIG. FIG. 8C and FIG. 9 show a part of the blanking array shown in FIG.
This manufacturing method applies a silicon process used for manufacturing a semiconductor. That is, in FIG. 8A, the transistors 703A, 703B, 704A,
An insulating film 802 such as a silicon oxide film is formed on the silicon substrate 801 on which the 704B is formed by a method such as thermal oxidation, anodic oxidation, CVD, or spin-on-glass coating. Then, the transistor 7 is formed on the insulating film 802.
Through holes for connecting wirings to 03A, 703B, 704A, and 704B are formed by a photoetching process. Thereafter, a wiring metal film of Cr, W, Mo, or the like is formed on the insulating film 802 including the through hole by sputtering or the like, and the wiring metal film is subjected to a wiring pattern 803a (signal line 705) by a photo-etching process.
Or 713 corresponds. ), 803b (signal line 706)
Or 714 corresponds. ), 803c (−voltage line 70)
The 7 or + voltage line 715 corresponds. ) And 803d (corresponding to the ground line 708 or 716. Note that one of the ground lines 708 and 716 can be omitted because the ground line 708 and the ground line 716 can be shared) and the transistors 703A, 703B, and 704 are formed.
A, 704B. Next, the wiring pattern 80
An insulating film 804 is formed on 3a, 803b, 803c, and 803d as before. Thereafter, a groove is formed in the portions 811a and 811b by photoetching, and M
The electrode material such as o is filled with a splatter and then the photoresist is removed, or the electrode material such as Mo is grown only in the groove portions 811a and 811b by a lift-off method.

By repeating the above steps several times, the wiring layer 80
5, insulating film 806, electrode material film 812 such as Mo, wiring layer 807, insulating film 808, electrode material film 813 such as Mo, wiring layer 809, insulating film 810, electrode material film 81 such as Mo
4 are sequentially formed. At this time, each of the opposing electrode material films is connected to a wiring pattern of a predetermined wiring layer, and a desired transistor (control element) formed on the silicon substrate 801 via the wiring layer under the wiring pattern. Will be connected. Note that even if a transistor (control element) is not formed in the silicon substrate 801, the desired wiring layer 8 can be formed.
05 can also be formed. Thereafter, a blanking window 303, that is, 100 shown in FIG.
1, 1002, 1003, 1004, 1005, 100
5 are removed by photoetching. This corresponds to removing the left and right sides of the two-dot chain lines 812 and 813 in FIG. The same portion of the silicon substrate 801 is removed by etching from below. Silicon substrate 80
Since 1 is thick, it is preferable to make it thinner to some extent with a hydrofluoric acid-based etchant having a high etching rate, and then open the window by dry etching. Thus, FIG.
A cross section as shown in FIG. As a result, in each of the windows (rectangular openings) 303 arranged two-dimensionally, each of the opposing blanking electrodes 304 and 305 is connected to the silicon substrate 8.
01 is formed by being connected to a desired transistor formed on the device.

FIG. 9 shows an embodiment including the capacitors 702A and 702B. By arranging the electrode pairs 901 and 902 so as to face each other in parallel, the capacitors 702A and 702B are provided.
B. The dielectric film 903 during this time
For example, tantalum pentoxide or the like having a large dielectric constant can be manufactured and used by a method such as splatter and thermal oxidation or anodic oxidation. One of the electrode pairs 901 is connected to a desired transistor formed on the silicon substrate 801 via a wiring layer therebelow, and the other 902 of the electrode pair is connected to a blanking electrode. . The above is an embodiment using a silicon process as a blanking array manufacturing method. However, other manufacturing methods such as a thick process on a ceramic substrate, a thin film process, a mechanical assembling method, and the like can also be used.

Next, an embodiment in which the etching or deposition apparatus by ion beam irradiation according to the present invention shown in FIG. 1 is applied will be described. FIG. 11 is a diagram for explaining an embodiment in which defect correction of a mask or a reticle is performed by ion beam irradiation. When correcting a defect of a mask or a reticle, a defect of a complicated shape is a problem. In FIG. 11, reference numeral 1101 denotes a regular pattern, which is indicated by oblique lines 1102a and 1102.
2b and 1102c are defect patterns. The image processing device 122 performs the mode of the scanning ion image detected by the secondary particle detector 114 based on the defect pattern information from the inspection device input by an input means such as a network or a recording medium as indicated by an arrow A. In this case, the defect pattern 1102 can be detected and recognized on the monitor 115. Further, the image processing device 122 designates only a defective portion (processed area) based on the image information detected and recognized on the monitor 115, and the blanking array control device 119 performs the operation based on the information on the designated blanking pattern. , That part (processing area)
The driving of the blanking array 104 is controlled so that only the ion beam passes and other portions are blanked.
As a result, the image of the blanking array 104 is
In the reduced projection modes 05 and 107, only the defective portions 1102a, 1102b, and 1102c are positioned with high precision, irradiated, and subjected to etching removal processing. Depending on the material, the combined use of a reactive gas is also effective. The above description has been given of the case where the defect is a black point defect. However, in the case of a white point defect, it is possible to correct the defect by depositing a carbon film by ion beam CVD. In the above, the case where the defect of the mask or the reticle is corrected has been described.
The present invention can also be applied to wiring correction and fine processing on a wiring substrate such as a TFT substrate or the like.

FIG. 12 is a view for explaining an embodiment in which characters, designs and the like are stamped on an LSI device by irradiating an ion beam. By the way, as an example of an LSI device, there is an increasing demand for writing information about a chip on a chip under legal regulations such as the Product Manager Act and the Environmental Law. In this embodiment, the model number 1201 and the date of manufacture 1
202, used materials 1203, manufacturing conditions 1204, and the like. Reference numeral 1205 denotes an LSI pattern. Information on such an engraved pattern such as a character pattern or a design pattern is obtained from the LSI production management system, and the obtained information on the engraved pattern is input to the image processing apparatus 122 by a network or a recording medium or the like as shown by an arrow A. Enter Image processing device 122
Converts the input information about the engraved pattern into image information, obtains information about the blanking pattern based on the converted image information about the engraved pattern, and, based on the obtained information about the blanking pattern, By the blanking array control device 119,
By controlling the driving of the blanking array 104, stamping can be performed. The relative position between the image information and the workpiece is determined by the secondary particle detector 114.
A scanning ion image detected from the laser beam may be used, or an optical microscope arranged in parallel with the ion beam column may be used.
In addition, a fine metal film pattern can be formed by ion beam CVD by spraying a film forming gas such as an organic metal compound such as Mo (CO) ₆ or W (CO) ₆ or an organic nonmetal compound such as TEOS. it can.

[0029]

According to the present invention, an arbitrary pattern such as a figure is reduced and projected onto a workpiece by using a blanking array which is irradiated with an ion beam, and an arbitrary fine pattern is immediately etched. Alternatively, there is an effect that deposition processing can be performed.

Further, according to the present invention, a pattern such as an arbitrary figure or the like is accurately positioned on a workpiece based on a secondary particle image by using a blanking array receiving irradiation of an ion beam. There is an effect that an arbitrary fine pattern can be instantly etched or deposited by reduction projection. Further, according to the present invention, by using a blanking array having resistance to ion beam irradiation, a pattern such as an arbitrary figure is reduced and projected on a workpiece to immediately etch an arbitrary fine pattern. An effect that processing or deposition processing can be performed is achieved. Further, according to the present invention, any fine defect pattern on the mask is projected by reducing and projecting a pattern such as an arbitrary figure or the like conforming to the shape of the fine defect pattern by using a blanking array for ion beam irradiation. Has the effect that it can be corrected immediately by etching or deposition.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing an embodiment of an ion beam projection processing apparatus for performing etching processing or deposition processing by ion beam irradiation according to the present invention.

FIG. 2 is a plan view showing a schematic configuration of a blanking array according to the present invention.

FIG. 3 is a view showing a cover for covering an electrode portion of a blanking array according to the present invention.

FIG. 4 is a diagram showing the overlap of images when a sample (workpiece) is placed at a position slightly distant from the image plane of the blanking array according to the present invention.

FIG. 5 is a diagram showing a method of scanning an ion beam on a sample (workpiece) by scanning a blanking electrode pair in an ion beam ON state of a blanking array according to the present invention.

FIG. 6 is a diagram showing an embodiment of a method for wiring to a blanking array according to the present invention.

FIG. 7 is a diagram showing one embodiment of a method for wiring to a blanking array according to the present invention.

FIG. 8 is a view illustrating an embodiment of a method of manufacturing a blanking array using a silicon process according to the present invention.

FIG. 9 is a view illustrating an embodiment of a method of manufacturing a blanking array having a capacitor using a silicon process according to the present invention.

FIG. 10 is a plan view of a blanking array for explaining one embodiment of a method of manufacturing a blanking array using a silicon process according to the present invention.

[Explanation of Signs] 101: High-brightness ion source, 102: Ion beam, 1
03: collimating lens, 104: blanking array, 105, 107: lens, 106: blanking aperture, 108: deflector, 113: sample (workpiece), 114: secondary particle detector, 115: monitor, 11
9 blanking array control device, 122 image processing device, 123 control device, 124 gas nozzle, 130
Power supply, 301: support plate, 303: opening, 304, 30
5 Blanking electrode pair, 306 Window, 307 Cover, 601, 602 Wiring, 701 Blanking electrode, 702 Capacitor, 703, 70
4. Control element (transistor), 705, 706, 71
3,714 ... signal line, 707 ...-voltage line, 708, 71
6 ... ground line, 715 ... + voltage line.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H01L 21/3205 H01L 21/88 Z (72) Inventor Mikio Hongo 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Pref. In the laboratory

Claims (18)

[Claims] An ion source and an ion beam extracted from the ion source are converted into substantially parallel beams.
And an electrode for receiving the substantially parallel beam converted by the first optical system and deflecting the ion beam.
A blanking array formed with a control element that controls a potential or a current to each electrode in a three-dimensional arrangement, and an aperture image formed by the ion beam formed by the blanking array is reduced and projected on a workpiece. A second optical system for forming an image, and a blanking array control system for controlling an electric potential or current to each electrode by controlling the control element provided on the blanking array to obtain an aperture image. The second optical system reduces and projects an aperture image obtained from the blanking array on the workpiece by the control of the blanking array control system to form an image, thereby processing the workpiece. An ion beam projection processing apparatus characterized in that: 2. A method according to claim 1, wherein said ion source and an ion beam extracted from said ion source are converted into substantially parallel beams.
And an electrode for receiving the substantially parallel beam converted by the first optical system and deflecting the ion beam.
A blanking array formed with a control element that controls a potential or a current to each electrode in a three-dimensional arrangement, and an aperture image formed by the ion beam formed by the blanking array on the workpiece. A second optical system for reducing projection to form an image, and a blanking array for obtaining an aperture image by controlling the potential or current to each electrode by controlling the control element provided on the blanking array A control system, and a gas supply system for supplying a reactive gas or a film-forming gas in the vicinity of the ion beam irradiation position on the workpiece, and the aperture image obtained from the blanking array under the control of the blanking array control system. The second optical system reduces and projects the image on the workpiece to form an image, and supplies the reactive gas or the reactant gas supplied by the gas supply system. Ion-beam projection processing apparatus characterized by being configured to machine a workpiece by use gas. 3. A method for converting an ion source and an ion beam extracted from the ion source into a substantially parallel beam.
And an electrode for receiving the substantially parallel beam converted by the first optical system and deflecting the ion beam.
A blanking array formed with a control element that controls a potential or a current to each electrode in a three-dimensional arrangement, and an aperture image formed by the ion beam formed by the blanking array is reduced and projected onto a workpiece. A second optical system for forming an image by ion-beam passing through the blanking array, a second optical system for reducing and projecting an image passing through the aperture on the workpiece, and forming an image on the blanking array. An aperture image is obtained by controlling the potential or current to each electrode by controlling the control element provided in the above, and the scanning ion beam is sequentially controlled by sequentially controlling the arranged electrodes by controlling the control element. And a scanning ion beam obtained from the blanking array under the control of the blanking array control system. Secondary particle detection means for detecting secondary particles obtained from the workpiece by irradiating the workpiece with a scientific system, and a display for displaying an image based on the secondary particles detected by the secondary particle detection means Means for observing an image based on secondary particles obtained from the workpiece displayed by the display means, and converting the aperture image obtained from the blanking array under the control of the blanking array control system into the second image. An ion beam projection processing apparatus characterized in that an optical system is configured to process the workpiece by reducing and projecting the image on the workpiece and forming an image. 4. A first method for converting an ion source and an ion beam extracted from the ion source into a substantially parallel beam.
And an electrode for receiving the substantially parallel beam converted by the first optical system and deflecting the ion beam.
A blanking array formed with a control element that controls a potential or a current to each electrode in a three-dimensional arrangement, and an aperture image formed by the ion beam formed by the blanking array is reduced and projected on a workpiece. Controlling the potential of each electrode by controlling the second optical system to form an image and the control element provided on the blanking array based on information on the blanking pattern to obtain an aperture image A blanking array control system for sequentially controlling the electrodes arranged by controlling the control element to obtain a scanning ion beam, and a scanning ion beam obtained from the blanking array under the control of the blanking array control system. Secondary particle detection means for detecting secondary particles obtained from the workpiece by irradiating the workpiece with the second optical system; 2 detected from the secondary particles detecting means
Image processing means for creating information on the blanking pattern from the image signal based on the next particle and inputting or feeding back to the blanking array control system, and obtained from the blanking array under the control of the blanking array control system. An ion beam projection processing apparatus characterized in that the aperture image is reduced and projected on the workpiece by the second optical system to form an image, thereby processing the workpiece. 5. An ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and irradiation with the parallel beam converted by the first optical system. An electrode for deflecting a beam is two-dimensionally arranged, a blanking array formed with a control element for controlling the potential or current to each electrode, and an aperture image formed by the ion beam formed by the blanking array. A second optical system for reducing and projecting an image on the workpiece and forming an image, and controlling the control element provided on the blanking array based on information on a blanking pattern to control the potential to each electrode or A blanking array control system that obtains an aperture image by controlling the current, and input design information of the workpiece or inspection information of the workpiece or on the workpiece. Image processing means for creating information on the blanking pattern based on the image information of the formed pattern and inputting or feeding it back to the blanking array control system, and the blanking array is controlled by the blanking array control system. An ion beam projection processing apparatus characterized in that the aperture image obtained from the above is reduced and projected onto the workpiece by the second optical system to form an image, thereby processing the workpiece. 6. An ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and irradiation of the substantially parallel beam converted by the first optical system. A blanking array formed by two-dimensionally arranging electrodes for deflecting an ion beam and including a control element for controlling a potential or a current to each electrode, and an aperture image formed by the ion beam formed by the blanking array To form an image by projecting a reduced image on the workpiece
The optical system, the potential or current to each electrode is controlled by controlling the control element provided on the blanking array based on information on a blanking pattern to obtain an aperture image, and further the control element A blanking array control system for sequentially controlling the electrodes arranged to obtain a scanning ion beam and a second optical system for controlling the scanning ion beam obtained from the blanking array by controlling the blanking array control system A secondary particle detecting means for detecting secondary particles obtained from the workpiece by irradiating the workpiece on the workpiece, and an image signal based on the secondary particle detected by the secondary particle detecting means and an input image signal. Compare the design information of the workpiece, the inspection information of the workpiece, or the image information of the pattern formed on the workpiece, and based on this comparison result, Image processing means for creating information relating to the blanking pattern and inputting or feeding back the information to the blanking array control system, wherein the aperture image obtained from the blanking array under the control of the blanking array control system is transmitted to the second optical system. An ion beam projection processing apparatus characterized in that the processing is performed by reducing and projecting an image on a workpiece to form an image. 7. The blanking array according to claim 1, wherein each of the two-dimensionally arranged electrodes is formed by a pair of opposed electrodes, and an opening for passing an ion beam is formed between the pair of opposed electrodes. The ion beam projection processing apparatus according to any one of claims 1 to 6, wherein 8. The blanking array according to claim 1, wherein each of the two-dimensionally arranged electrodes includes a capacitor capable of holding the potential when a voltage is applied to each of the electrodes by the control element. The ion beam projection processing apparatus according to any one of claims 1 to 6. 9. The ion beam projection processing apparatus according to claim 1, wherein in the blanking array, each electrode is formed of a metal material that is not easily sputtered by an ion beam. 10. The ion beam projection processing apparatus according to claim 1, wherein each electrode in said blanking array is formed so as to be covered with at least a metal material which is not easily sputtered by an ion beam. . 11. An ion beam extracted from an ion source is converted into a substantially parallel beam by a first optical system, and the converted parallel beam is irradiated to deflect the ion beam. The aperture image formed by controlling the electric potential or current to each of the electrodes with respect to the blanking array arranged on the workpiece, and the aperture image by the ion beam passing through the blanking aperture is formed on the workpiece by the second optical system. An ion beam projection processing method characterized in that an object to be processed is etched or deposited by reduction projection to form an image. 12. An ion beam extracted from an ion source is converted into a substantially parallel beam by a first optical system, and the converted substantially parallel beam is irradiated to deflect the ion beam. The aperture image formed by controlling the electric potential or current to each of the electrodes with respect to the blanking array arranged on the workpiece, and the aperture image by the ion beam passing through the blanking aperture is formed on the workpiece by the second optical system. An ion beam projection processing method characterized in that an object to be processed in a reactive gas atmosphere is subjected to reactive etching processing by reducing and projecting an image. 13. An ion beam extracted from an ion source is converted into a substantially parallel beam by a first optical system, and the converted substantially parallel beam is irradiated to deflect the ion beam. The aperture image formed by controlling the electric potential or current to each of the electrodes with respect to the blanking array arranged on the workpiece, and the aperture image by the ion beam passing through the blanking aperture is formed on the workpiece by the second optical system. An ion beam projection processing method, comprising reducing and projecting an image to form an image and depositing a workpiece in a gas atmosphere for film formation. 14. An electrode which converts an ion beam extracted from an ion source into a substantially parallel beam by a first optical system, receives the converted substantially parallel beam, and deflects the ion beam in a two-dimensional manner. The sequentially arranged electrodes are sequentially controlled with respect to the blanking array, and a scanning ion beam is obtained and irradiated on the workpiece by the second optical system. A first step of detecting the obtained secondary particles and observing an image based on the detected secondary particles; and converting an ion beam extracted from the ion source into a substantially parallel beam by a first optical system. Receiving the converted substantially parallel beam and deflecting the ion beam based on the secondary particle image observed in the first step with respect to a blanking array in which electrodes are two-dimensionally arranged. each The aperture image formed by controlling the potential or current to the electrode and passing through the blanking aperture by the ion beam is reduced and projected on the workpiece by the second optical system to form an image. And a second step of etching or depositing. 15. An electrode which converts an ion beam extracted from an ion source into a substantially parallel beam by a first optical system, receives the converted substantially parallel beam, and deflects the ion beam in a two-dimensional manner. The sequentially arranged electrodes are sequentially controlled with respect to the blanking array, and a scanning ion beam is obtained and irradiated on the workpiece by the second optical system. A first step of detecting the obtained secondary particles and creating information on a blanking pattern based on an image signal based on the detected secondary particles; and a first optical system for the ion beam extracted from the ion source. The system converts the beam into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam. The second optical system forms an aperture image by an ion beam formed by controlling the potential or current to each of the electrodes based on the information on the blanking pattern created in the first step and passing through the blanking aperture. A second step of subjecting the workpiece to etching or deposition processing by reducing and projecting the image on the workpiece to form an image. 16. A first step of creating information relating to a blanking pattern based on design information of a workpiece, inspection information of the workpiece, or image information of a pattern formed on the workpiece, and an ion source. A blanking array in which the first optical system converts the ion beam extracted from the laser beam into a substantially parallel beam, receives the converted substantially parallel beam, and deflects the ion beam two-dimensionally. The aperture image formed by controlling the potential or the current to each of the electrodes based on the information on the blanking pattern created in the first step is formed by the ion beam passing through the blanking aperture. A second optical system for reducing or projecting an image on a workpiece by an optical system to form an image and etching or depositing the workpiece; And an ion beam projection processing method. 17. An electrode which converts an ion beam extracted from an ion source into a substantially parallel beam by a first optical system, receives the converted substantially parallel beam, and deflects the ion beam in a two-dimensional manner. The sequentially arranged electrodes are sequentially controlled with respect to the blanking array, and a scanning ion beam is obtained and irradiated on the workpiece by the second optical system. The obtained secondary particles are detected, and the image signal based on the detected secondary particles is compared with the design information of the workpiece, the inspection information of the workpiece, or the image information of the pattern formed on the workpiece. A first step of creating information on a blanking pattern by converting the ion beam extracted from the ion source into a substantially parallel beam by a first optical system. The potential applied to each of the electrodes based on the information on the blanking pattern created in the first step is applied to a blanking array in which electrodes for receiving the linear beam and deflecting the ion beam are two-dimensionally arranged. Alternatively, the aperture image formed by controlling the current and passing through the blanking aperture by the ion beam is reduced and projected on the workpiece by the second optical system to form an image. And a second step of performing position processing. 18. An electrode which converts an ion beam extracted from an ion source into a substantially parallel beam by a first optical system, receives the converted substantially parallel beam, and deflects the ion beam in a two-dimensional manner. The aperture image formed by controlling the potential or current to each of the electrodes with respect to the blanking array arranged in a spatial manner and passing through the blanking aperture is converted into a defective portion on the mask by the second optical system. A defect correction method for a mask, characterized in that a defect is etched and deposited to correct the image by reducing and projecting the image to form an image.