JP3443294B2 - Ion beam projection processing method and apparatus - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for forming a pattern by irradiating a sample with an ion beam extracted from a high-brightness ion source.

[0002]

2. Description of the Related Art As a conventional technique relating to an apparatus and method for forming a pattern by irradiating a sample with an ion beam extracted from a high-brightness ion source, Japanese Patent Laid-Open No. 21335/1996 is known.
No. 0 (Prior Art 1) and JP-A-8-22217
There is a publication No. 5 (prior art 2). In the prior arts 1 and 2, an ion beam extracted from a liquid metal ion source of gallium is converted into a nearly parallel beam by a collimator lens and irradiated onto a shaping aperture, and the ion beam passing through the sample aperture is sampled by a projection lens. The sample is processed in this shape by forming a reduced projection image of the aperture of the aperture on the top. However, in order to process an arbitrary figure by the reduced projection image of the aperture of the aperture, the aperture 204 must be replaced each time, which is substantially difficult.

Further, as a prior art relating to a charged particle beam exposure method using a blanking aperture array and its apparatus, there is Japanese Patent Laid-Open No. 3-174715 (Prior Art 3). This prior art 3 uses a blanking aperture array having a substrate in which apertures with blanking electrodes are two-dimensionally arranged in at least m rows and n columns, and a charged particle beam passing through the apertures with a voltage applied to the blanking electrodes. In the charged particle beam exposure for exposing the exposure target on the stage with the charged particle beam patterned by turning on / off, the blanking aperture array is arranged on the m sets of blanking electrodes of the aperture in the j-th column. It is described that n number of m-bit shift registers for applying a voltage according to pattern data of a figure to be exposed are provided. Further, as a conventional technique relating to a charged particle beam exposure method and apparatus using a stencil mask instead of an aperture, Japanese Patent Laid-Open No. 4-5 is known.
There is an 8518 publication (prior art 4). In the prior art 4, a stencil mask having a plurality of block pattern areas is used, and one block pattern area is selectively irradiated with a charged particle beam, and the passed charged particle beam is irradiated onto a wafer to perform pattern writing. In block exposure, at least one of the block pattern regions has a plurality of separated openings that form a dispersed pattern even when transferred onto a wafer, and each of these openings is provided with a blanking electrode. At the time of exposure, a charged particle beam exposure method is described in which a controlled signal is applied to the blanking electrode of each opening according to the pattern to be exposed to expose a pattern corresponding to only the selected opening on the wafer. ing.

[0004]

There is a demand for performing an ultrafine etching process or a deposition process immediately by reducing and projecting an arbitrary pattern by ion beam irradiation. By the way, in the prior arts 1 and 2, it was not possible to immediately perform an etching process or a deposition process on an arbitrary ultrafine pattern. On the other hand, the prior arts 3 and 4 merely suggest an exposure technique using a charged particle beam. That is, the prior arts 3 and 4 have not sufficiently taken into consideration the fact that an arbitrary pattern by ion beam irradiation is reduced and projected to immediately perform ultrafine etching or deposition. Further, in the prior arts 3 and 4, the relative positions of the pattern formed on the workpiece to be subjected to the ultra-fine etching processing or the deposition processing by the ion beam irradiation and the blanking pattern generated from the blanking array. It was not considered enough about the alignment. Further, in the blanking array, resistance to ion beam irradiation capable of etching processing has not been sufficiently taken into consideration.

An object of the present invention is to solve the above problems.
Ion beam projection capable of reducing and projecting patterns such as arbitrary figures onto a work piece by using a blanking array that receives irradiation of ion beams and performing etching or deposition processing on arbitrary fine patterns immediately It is to provide a processing method and an apparatus thereof. Another object of the present invention is to use a blanking array that is irradiated with an ion beam to accurately align a workpiece with a workpiece based on a secondary particle image to reduce a pattern such as an arbitrary figure. It is an object of the present invention to provide an ion beam projection processing method and apparatus capable of projecting and immediately performing an etching process or a deposition process on an arbitrary fine pattern.

Another object of the present invention is to use a blanking array having resistance to the irradiation of an ion beam to reduce and project a pattern such as an arbitrary figure onto an object to be processed to obtain an arbitrary fine pattern. It is an object of the present invention to provide an ion beam projection processing method and an apparatus therefor capable of immediately etching or depositing a pattern. Another object of the present invention is to use a blanking array for ion beam irradiation to reduce and project a pattern such as an arbitrary figure that matches the shape of a fine defect pattern so as to reduce an arbitrary fine pattern on a mask. It is an object of the present invention to provide a method of repairing a defect in a mask, which can immediately perform etching processing or deposition processing on a defect pattern.

[0007]

In order to achieve the above object, the present invention provides an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and It is formed by arranging two-dimensionally arrayed electrodes for deflecting the ion beam upon receiving the irradiation of the substantially parallel beam converted by the first optical system and controlling the potential or current to each electrode. A blanking array, a second optical system for reducing and projecting an aperture image by an ion beam formed by the blanking array onto a workpiece, and the control element provided on the blanking array. And a blanking array control system for controlling an electric potential or a current to each electrode to obtain an aperture image, and the blanking array control system controls the blanking array control system. Aperture image obtained from the king array is reduced and projected on the workpiece by the second optical system to form an image, and the workpiece is processed (etching processing or deposition processing). Ion beam projection processing device.

The present invention is also directed to an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and a substantially parallel beam converted by the first optical system. A blanking array formed by two-dimensionally arranging electrodes for deflecting an ion beam in response to beam irradiation, and including a control element for controlling potential or current to each electrode, and a blanking array formed by the blanking array. The second optical system for reducing and projecting the aperture image by the ion beam onto the workpiece and forming the image, and the potential or current to each electrode by controlling the control element provided on the blanking array. Blanking array control system that controls the aperture to obtain an aperture image and gas supply that supplies reactive gas or film forming gas near the ion beam irradiation position on the workpiece And an aperture image obtained from the blanking array under the control of the blanking array control system is reduced and projected onto the workpiece by the second optical system to form an image, which is supplied by the gas supply system. The ion beam projection processing apparatus is configured to process (etching or depositing) a workpiece with a reactive gas or a gas for film formation.
Further, the present invention provides an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and irradiation of the substantially parallel beam converted by the first optical system. And a blanking array formed by arranging electrodes for deflecting an ion beam two-dimensionally and including a control element for controlling the potential or current to each electrode, and the ions formed by the blanking array. A second optical system for reducing and projecting an aperture image by a beam onto a workpiece and forming an aperture-passing image by an ion beam passing through the blanking array by reducing and projecting it onto the workpiece. By controlling the second optical system and the control element provided on the blanking array, the potential or current to each electrode is controlled to obtain an aperture image, and A blanking array control system for sequentially controlling the arrayed electrodes by controlling the control element to obtain a scanning ion beam, and a scanning ion beam obtained from the blanking array under the control of the blanking array control system. The secondary particle detecting means for irradiating the workpiece with the optical system of FIG. 1 to detect the secondary particles obtained from the workpiece, and the image based on the secondary particles detected by the secondary particle detecting means are displayed. A second means for observing an image based on secondary particles obtained from the workpiece displayed by the display means, and displaying an aperture image obtained from the blanking array under the control of the blanking array control system. The ion beam projection processing apparatus is characterized in that the optical system is configured to reduce and project an image on a workpiece to form an image to process the workpiece.

The present invention is also directed to an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and a substantially parallel beam converted by the first optical system. A blanking array formed by two-dimensionally arranging electrodes for deflecting an ion beam in response to beam irradiation, and including a control element for controlling potential or current to each electrode, and a blanking array formed by the blanking array. A second optical system for reducing and projecting an aperture image by an ion beam onto a workpiece to form an image, and controlling the control element provided on the blanking array based on information on a blanking pattern. By controlling the potential to each electrode to obtain an aperture image, and further controlling the above-mentioned control elements to sequentially control the arrayed electrodes to scan ion beam. And a secondary array obtained from the workpiece by irradiating the workpiece with the scanning optical beam obtained from the blanking array under the control of the blanking array control system by the second optical system. Information about the blanking pattern is created from secondary particle detection means for detecting particles and an image signal based on the secondary particles detected by the secondary particle detection means, and is input or fed back to the blanking array control system. Image processing means, and an aperture image obtained from the blanking array under the control of the blanking array control system is reduced and projected onto the workpiece by the second optical system to form an image, and the workpiece is processed. The ion beam projection processing apparatus is characterized by being configured as described above.

The present invention is also directed to an ion source, a first optical system for converting an ion beam extracted from the ion source into a substantially parallel beam, and irradiation of the parallel beam converted by the first optical system. And a blanking array formed by arranging electrodes for deflecting the ion beam two-dimensionally and providing a control element for controlling the potential or current to each electrode, and the ion beam formed by the blanking array. A second optical system for reducing and projecting the aperture image by the device onto a workpiece and forming an image, and each electrode by controlling the control element provided on the blanking array based on information about the blanking pattern. Blanking array control system that obtains an aperture image by controlling the potential or current to the workpiece and the design information or inspection information of the workpiece that was input Or an image processing means for creating information on the blanking pattern based on image information of a pattern formed on a workpiece and inputting or feeding it back to the blanking array control system. An ion beam characterized in that an aperture image obtained from a blanking array by system control is reduced and projected onto a workpiece by the second optical system to form an image, and the workpiece is processed. It is a projection processing device. The present invention also provides an ion source, a first optical system that converts an ion beam extracted from the ion source into a substantially parallel beam, and an irradiation of the substantially parallel beam converted by the first optical system. A blanking array formed by arranging electrodes for deflecting an ion beam two-dimensionally and providing a control element for controlling a potential or a current to each electrode, and an aperture for an ion beam formed by the blanking array A second optical system for projecting an image by reducing and projecting the image on the workpiece, and controlling the control elements provided on the blanking array based on information about the blanking pattern, Aperture image is obtained by controlling the potential or current, and the arrayed electrodes are sequentially controlled by controlling the above-mentioned control element (for example, OFF control) to perform scanning. A blanking array control system for obtaining an on-beam, and a scanning ion beam obtained from the blanking array under the control of the blanking array control system are radiated onto the workpiece by the second optical system to obtain the workpiece 2 Secondary particle detecting means for detecting secondary particles, and image information based on the secondary particles detected by the secondary particle detecting means and design information of the workpiece to be input or inspection information of the workpiece or workpiece. Image processing means for comparing with the image information of the pattern formed above, creating information regarding the blanking pattern based on the comparison result, and inputting or feeding back to the blanking array control system. An aperture image obtained from the blanking array under the control of the ranking array control system is reduced and projected onto the workpiece by the second optical system. An ion beam projection processing apparatus characterized by being configured to process the workpiece is imaged Te.

Further, according to the present invention, in the blanking array in the above-mentioned ion beam projection processing apparatus, each two-dimensionally arranged electrode is formed by a pair of opposing electrodes,
It is characterized in that an opening for passing an ion beam is formed between the pair of opposing electrodes. Further, the present invention is characterized in that, in the blanking array in the above ion beam projection processing apparatus, each electrode, a control element for controlling each electrode, and a wiring pattern including a power supply line and a signal line are formed by a laminated structure. To do. Further, according to the present invention, in the blanking array in the above-mentioned ion beam projection processing apparatus, each electrode arranged two-dimensionally can hold a potential when a voltage is applied to each electrode by the control element ( It is characterized by comprising a capacitor). Further, the present invention is characterized in that, in the blanking array in the above-mentioned ion beam projection processing apparatus, each electrode is formed of a metal material (for example, Mo or W) which is difficult to be sputtered by an ion beam. Further, the present invention is, in the ion beam projection processing apparatus, wherein each electrode in the blanking array is
It is characterized in that it is formed so as to be covered with at least a metal material (for example, Mo or W) which is difficult to be sputtered by an ion beam. Further, according to the present invention, the ion beam extracted from the ion source is converted into a substantially parallel beam by the first optical system, and an electrode for deflecting the ion beam upon receiving the converted substantially parallel beam is provided. Aperture image formed by controlling the potential or current to each electrode of the blanking array arranged in a dimension and passing through the blanking aperture to form an aperture image on the workpiece by the second optical system. Is an ion beam projection processing method characterized by subjecting a workpiece to reduction etching and image formation to perform etching or deposition.

According to the present invention, the ion beam extracted from the ion source is converted into a substantially parallel beam by the first optical system, and the converted substantially parallel beam is irradiated to deflect the ion beam. A blanking array in which electrodes are arranged two-dimensionally is formed by controlling the potential or current to each electrode, and an aperture image by the ion beam that has passed through the blanking aperture is covered by the second optical system. The ion beam projection processing method is characterized in that the object to be processed in a reactive gas atmosphere is subjected to reactive etching processing by reducing and projecting an image on the processing object. Further, according to the present invention, the ion beam extracted from the ion source is converted into a substantially parallel beam by the first optical system, and an electrode for deflecting the ion beam upon receiving the converted substantially parallel beam is provided. Aperture image formed by controlling the potential or current to each electrode of the blanking array arranged in a dimension and passing through the blanking aperture to form an aperture image on the workpiece by the second optical system. In the ion beam projection processing method, the object to be processed in the film forming gas atmosphere is subjected to a deposition processing by reducing and projecting the image onto the substrate. Also,
The present invention converts the ion beam extracted from the ion source into a substantially parallel beam by the first optical system, receives the converted substantially parallel beam, and deflects the ion beam into two-dimensional electrodes. The arrayed electrodes are sequentially controlled with respect to the arrayed blanking array to obtain a scanning ion beam, and the second optical system irradiates the workpiece with the scanning ion beam to obtain the secondary ion detecting means from the workpiece. First detecting secondary particles detected and observing an image based on the detected secondary particles
And the step of converting the ion beam extracted from the ion source into a substantially parallel beam by the first optical system, receiving the converted substantially parallel beam, and deflecting the ion beam into two-dimensional electrodes. Ion beam formed by controlling the potential or current to each of the electrodes based on the secondary particle image observed in the first step with respect to the blanking array arranged in the above, and passing through the blanking aperture. Beam projection processing by a second optical system for reducing and projecting an aperture image on the workpiece by the second optical system to form an image and perform etching or deposition processing on the workpiece. Is the way.

In the present invention, the ion beam extracted from the ion source is converted into a substantially parallel beam by the first optical system, and the converted substantially parallel beam is irradiated to deflect the ion beam. With respect to a blanking array in which electrodes are arranged two-dimensionally, the arranged electrodes are sequentially controlled (for example, turned off) to obtain a scanning ion beam, and a second optical system irradiates the workpiece with a scanning ion beam. A first step of detecting secondary particles obtained from the workpiece by the secondary particle detection means, and creating information on the planning pattern based on the image signal based on the detected secondary particles; and extracting from the ion source. The converted ion beam is converted into a substantially parallel beam by the first optical system, and the electrodes for irradiating the converted substantially parallel beam and deflecting the ion beam are arranged two-dimensionally. An aperture formed by an ion beam that has been formed by controlling the potential or current to each of the electrodes on the basis of information regarding the blanking pattern created in the first step for the blanking array and has passed through the blanking aperture. And a second step of forming an image by reducing and projecting the image on the object to be processed by the second optical system to etch or deposit the object to be processed. is there. The present invention also includes a first step of creating information about a planing pattern based on design information of a workpiece, inspection information of the workpiece, or image information of a pattern formed on the workpiece, and an ion The ion beam extracted from the source is converted into a substantially parallel beam by the first optical system, irradiated with the converted substantially parallel beam, and a blanking in which electrodes for deflecting the ion beam are two-dimensionally arranged An aperture image by an ion beam that has been formed by controlling the potential or current to each of the electrodes based on the information regarding the blanking pattern created in the first step for the array and has passed through the blanking aperture is formed. A second optical system is used to perform an etching process or a deposition process on the workpiece by reducing and projecting it onto the workpiece to form an image. An ion beam projection processing method characterized by having a step.

According to the present invention, the ion beam extracted from the ion source is converted into a substantially parallel beam by the first optical system, and the converted substantially parallel beam is irradiated to deflect the ion beam. With respect to a blanking array in which electrodes are arranged two-dimensionally, the arranged electrodes are sequentially controlled (for example, turned off) to obtain a scanning ion beam, and a second optical system irradiates the workpiece with a scanning ion beam. Secondary particles obtained from the workpiece are detected by the secondary particle detection means, and an image signal based on the detected secondary particles and design information of the workpiece or inspection information of the workpiece or formation on the workpiece. The first step of creating information about the planning pattern by comparing the image information of the formed pattern with the image information of the pattern, and the substantially parallel beam in the first optical system for the ion beam extracted from the ion source. The blanking pattern formed in the first step for a blanking array in which electrodes are two-dimensionally arrayed after being converted into a beam and irradiated with the converted substantially parallel beam. An aperture image formed by controlling the potential or current to each of the electrodes based on information, which is formed by the ion beam passing through the blanking aperture, is reduced and projected onto the workpiece by the second optical system to form an image. And a second step of etching or depositing the object to be processed, thereby performing an ion beam projection processing method.

Further, according to the present invention, the ion beam extracted from the ion source is converted into a substantially parallel beam by the first optical system, and the converted substantially parallel beam is irradiated to deflect the ion beam. A blanking array in which electrodes are arranged two-dimensionally is formed by controlling the potential or current to each electrode, and an aperture image by the ion beam that has passed through the blanking aperture is masked by the second optical system. It is a method of repairing a defect of a mask, which is characterized in that the defect is reduced and projected onto the upper defect to form an image, and the defect is repaired by etching or deposition. Further, the present invention is an ion beam projection processing method for processing an object by projecting an image of an aperture through which an ion beam passes, wherein the aperture includes a blanking array in which electrodes are two-dimensionally arranged, The arrayed electrodes are sequentially turned off (the ion beam passing point in the blanking off state (the ion beam ON state) is sequentially scanned), so that the ion beam is passed through the blanking array and irradiated to the workpiece. Is scanned, and secondary particles generated from the workpiece are detected by the scanning to obtain a secondary particle image of the workpiece. Further, the present invention is characterized in that a processing region for processing a workpiece by the blanking array is set based on the secondary particle image. Further, the present invention is characterized in that a processing region for processing a workpiece by the blanking array is set based on a contour extracted by image-processing the secondary particle image. Further, according to the present invention, a processing area for processing a workpiece by the blanking array is set to the above-mentioned 2
It is characterized in that it is set based on the result of comparison between the result of image processing of the next particle image and the design pattern of the workpiece.
Further, the present invention is characterized in that a blanking pattern corresponding to a processing region for processing a workpiece by the blanking array is generated in the blanking array.

As described above, according to the above configuration,
By using the blanking array that receives the irradiation of the ion beam, it is possible to reduce and project a pattern such as an arbitrary figure onto the object to be processed, and to immediately perform an etching process or a deposition process on an arbitrary fine pattern. Further, according to the above configuration, by using the blanking array that receives the irradiation of the ion beam, the pattern such as an arbitrary figure is reduced and projected by accurately aligning the workpiece with the workpiece based on the secondary particle image. Thus, an arbitrary fine pattern can be immediately etched or deposited. Further, according to the above configuration, by using the blanking array having resistance to the irradiation of the ion beam, a pattern such as an arbitrary figure is reduced and projected on the workpiece to immediately etch an arbitrary fine pattern. It can be processed or deposited. Further, according to the configuration, a blanking array is used for ion beam irradiation, and a pattern such as an arbitrary figure according to the shape of the fine defect pattern is reduced and projected to produce an arbitrary fine defect pattern on the mask. Can be corrected by etching or depositing immediately.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an ion beam projection processing method and apparatus for performing etching processing or deposition processing by ion beam irradiation according to the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram showing an embodiment of an ion beam projection processing apparatus for performing etching processing or deposition processing by ion beam irradiation according to the present invention. High-brightness ion source 10
The ion beam 102 extracted from No. 1 has a large divergence angle, but is made nearly parallel (converted) by the collimating lens 103 and is controlled by the blanking array controller 119 based on the information on the blanking pattern. Blanking array 104
Is irradiated. Here, each blanking electrode of the blanking array 104 may or may not be applied with a blanking voltage (potential) or current according to information (for example, image information) regarding the blanking pattern of the blanking array controller 119. Therefore, for example, the ion beam that has passed through the applied 104a reaches and is blocked by 106a on the planning aperture 106, and does not reach the sample 113. On the other hand, the ion beam that has passed through the blanking array 104 without being blanked is focused by the lens 105 on the closed portion 109 of the flanking aperture 106,
After that, the image is projected again by the lens 107 to form the image 112 of the blanking array 104 on the sample 113.
That is, the ion beam passing through one point 126 of the blanking array 104 is reflected by the lenses 105a, 105b, 10
5c, blanking aperture 106, lens 107
After passing through a, 107b and 107c, it is focused on the corresponding point 128 on the sample. Similarly, the ion beam passing through the other points of the blanking array 104 is focused on another corresponding point on the sample (workpiece). In this way, image projection is performed on the sample surface of the blanking array 104.
Then, etching or deposition processing is performed by the image-projected ion beam.

Here, as shown in FIG. 2, the blanking array 104 requires the regions of the support plate 301 including the electrodes 304 and 305 and the wiring region, so that the ion beam reaching these portions is blocked. As a result, the image plane is not reached. On the other hand, by placing the sample 113 on a surface slightly apart from the accurate image plane, the image spreads as shown in FIG. 4, and the area where the ion beam does not reach can be reduced on the sample. . Here, A shown in FIG. _{4 '1 ~A' N, B} '1 ~B' N, C '1 ~C' N ···
Are images of A _{1 to} A _N , B _{1 to} B _N , C _{1 to} C _N ... Shown in FIG. The blanking array control circuit 119 is controlled based on information regarding a blanking pattern (corresponding to a processing area on a workpiece) based on image information obtained by the image processing device 122. Image processing device 122
The information as the source of the information may be design information from an external CAD system, original image information of a processing pattern from a defect inspection device, defect pattern information from a scanning ion image, or the like. Further, when the ion beam is irradiated, a reactive gas such as XeF ₂ , Cl ₂ and H ₂ 0 is discharged from the gas nozzle 124 to the vicinity of the sample,
Alternatively, a film-forming gas such as an organometallic compound such as Mo (CO) ₆ or W (CO) ₆ or an organic non-metallic compound such as TEOS may be sprayed to perform reactive etching or devolution by ion beam irradiation. it can. The gas nozzle 124 is moved to an optimum position by a nozzle drive and alignment mechanism 125 controlled by the controller 123. Further, the gas flow rate adjusting mechanism 126 controlled by the control device 123 adjusts the flow rate of the gas discharged from the nozzle 124. In addition, a secondary particle detector 114, a deflector power source 116, and a deflector 108 are provided for observing the image of the sample, and the lenses 103, 105,
Alter the voltage applied to 107 and aligner 124
By adjusting the optical axis, the scanning ion image can be detected on the monitor 115 without changing the optical axis. Information such as a defect pattern obtained by this is sent to the image processing device 122. In this embodiment,
If a deceleration space is provided between the lens 103 and the lens 105, the energy of the ion beam incident on the blanking array 104 can be reduced and damage to the blanking array due to ion beam irradiation can be reduced. Further, the deflection sensitivity of the flanking electrodes 304, 305 can be increased. In this case, the blanking array 104 needs to be floated at a certain potential instead of the ground potential.

When observing an image of a sample, the following method can be used in addition to changing and controlling the lens voltage to make the sample surface the focal plane as described above. As shown in FIG. 5, one blanking electrode of the blanking array 104 is in an OFF state (ON state in which the ion beam passes).
And all others are in the ON state where the ion beam does not reach the sample. Then, the opened blanking electrodes are sequentially controlled to be in the OFF state for scanning, and if a scanning ion beam is formed, the opened portion (ion beam) on the sample is sequentially scanned, and the secondary particle detector The scanning ion image is detected by 114. In this case, there is no need to change the lens voltage applied to the lenses 103, 105, 107, and there is no need to adjust the optical axis. In the apparatus described above, the driving device 121 to the ion source 101, the power source 120 to the lens 103, the power source 118 to the lens 105, the power source 117 to the lens 107, the driving device 125 to the aligner 124, the power source to the deflector 108. 11
6, the monitor 115, the image processing device 122, the blanking array control device 119, the gas nozzle driving / positioning mechanism 125, the gas flow rate adjusting device 126, etc. are all under the control of the overall control device 123.

As one example of numerical values, the interval between the blanking electrode pairs 304 and 305 is about 5 to 15 microns, the interval between adjacent blanking electrode pairs is about 10 to 20 microns,
Accelerating voltage 10-5 between the ion source 101 and the sample 113
Blanking electrode 30 in a deceleration space of about 0 kV
Accelerating voltage of ion beam incident on 4,305
With an optical system of about 3 kV and a blanking electrode applied voltage of about 3 to 10 V, reduction projection of about (1/20) to (1/100) is performed on the surface of the blanking array 104, and about 0.1 to 0. It is theoretically possible to obtain a resolution of about 0.5 micron. The blanking array 104 is shown in FIG. This is a large number of blanking electrodes
It is arranged in a dimension. Blanking array 104
Corresponds to each blanking electrode, a rectangular opening 303 is provided in the insulating support plate 301, and the electrodes 304 and 305 constituting each blanking electrode are placed facing each other.
Control elements (transistors) 704A and 703A for turning on / off the application of the supplied voltage to each blanking electrode,
It comprises 703B and 704B. Each of the blanking electrodes formed by the counter electrodes 304 and 305 has a power source 130 and a blanking array controller 119.
And the wiring in the blanking array,
It is housed inside the support plate 301. The blanking array 104 has a large number of blanking electrodes 2 having the same configuration.
The ion beams, which are arranged (arranged) in a dimension and are incident from above vertically on the paper surface, generate the respective blanking electrode pairs 304 and 305.
Depending on whether or not the positive and negative voltages are applied by turning on the control element (transistor), when passing through the opening 303 between the blanking electrodes 304 and 305, it is bent or passes in the same direction. . Since the voltage of each blanking electrode 304, 305 is independently controlled, the direction of the ion beam passing through each opening is independently controlled.

In this case, the blanking electrodes 304, 30
By using a metal such as molybdenum or tungsten that is not easily sputtered by an ion beam as the material of 5, the life of the blanking electrodes 304 and 305 can be extended. As shown in FIG. 3, a cover 307 having a window 306 that covers the blanking electrodes 304 and 305 is formed of a metal material such as molybdenum or tungsten that is difficult to be sputtered by an ion beam. By covering the blanking electrodes 304 and 305 with an insulating film interposed therebetween, the electrode 30
Since 4,305 are not directly irradiated with the ion beam, the life of the blanking electrodes 304,305 can be extended. In this case, the cover 307 is made of a metal material such as tungsten or molybdenum, and is grounded to the ground potential of the blanking electrode to apply a voltage to the blanking electrodes 304 and 305, thereby surrounding the blanking electrodes 304 and 305. Can reduce the influence on the electric field.
Here, the wiring to each electrode becomes an issue. For independent control, an independent wiring is connected to each of the blanking electrodes. For example, in the case of an array of 100 × 100 pairs of blanking electrodes, the number of wirings is 20,000, and 301 in FIG.
It is necessary to lay 100 to 200 wirings in the wiring space as shown in (3), which causes considerable difficulty in terms of structure and control. In order to significantly reduce the number of wirings against this problem, the following method can be adopted. FIG. 6 is a diagram showing an embodiment of the blanking array 104 and a portion of the wiring thereof. According to this embodiment, each of the wirings formed in the wiring space is, for example, 601,
As indicated by 602, there are about four. FIG. 7 is a detailed view of FIG. Blanking electrodes 701A and 701
702A and 702B are formed adjacent to B. As wirings, signal lines 705 and 706, a voltage line 707, and a ground line (ground line) 708 are laid in the horizontal direction. In addition, as the wiring, the signal line 7 is provided in the vertical direction.
13, 714, + voltage line 715, and ground line (ground line) 716 are laid. Since the ground line 708 and the ground line 716 can be shared, one of them can be deleted. Then, the signal line 705 and the signal line 714, the signal line 706 and the signal line 71.
4, the signal line 705 and the signal line 713, and the signal line 706 and the signal line 713 intersect with each other at the transistor (control element) 7
04A, 703A, 703B, 704B are installed.

Considering the case where a positive voltage is generated on the tenth electrode 701A, both the horizontal signal line 706s and the vertical signal line 714p are set to the HIGH state to turn on the transistor 703A to turn on the capacitor.
702A is connected to-voltage line 707 to connect capacitor 702
A positive voltage is generated in the blanking electrode 701A through A. Then, the signal line 706s and the signal line 714p
Is in the LOW state and the transistor 703A is turned off, the blanking electrode 701A continues to maintain the potential. After that, when both the signal line 705r and the signal line 714p are in a HIGH state, the blanking electrode 701 is turned on by the action of turning on the transistor 704A.
As a result of A being connected to the ground line (earth line) 708 and being discharged, the voltages of the capacitor 702A and the blanking electrode 701A become zero.

Blanking electrode 701B facing this
The same applies to the generation of a negative voltage on the capacitor 702B. Ie-electrode 701B
Considering a case where a negative voltage is generated in the horizontal direction, both the horizontal signal line 705t and the vertical signal line 713q are HI.
The transistor 703B is turned on in the GH state to connect the capacitor 702B to the + voltage line 715,
Blanking electrode 701B through capacitor 702B
To generate a negative potential. Then, the signal line 713q and the signal line 705t are set to the LOW state and the transistor 70
Even if 3B is turned off, the capacitor 703B continues to maintain the voltage. After that, the signal line 706u,
If both the signal line 713q and the signal line 713q are in the HIGH state, the blanking electrode 701B is connected to the ground line (ground line) 716 or 708 by the ON operation of the transistor 704B, and the capacitor 7 is discharged.
The voltage of 03B and blanking electrode 701B becomes zero. By arranging a large number of wirings, electrodes, and capacitors having such a configuration and action in an array on a plane, it is possible to control the state of the blanking array 104 with fewer signal lines by scanning signals. That is, FIG.
In the above, the blanking array control device 119, based on the information on the blanking pattern based on the image information from the image processing device 122, sets the electrode pairs for inputting the blanking voltage control signal to A ₁ , A ₂ , A ₃ ,.・ ・ 、
_{B 1, B 2, B 3} , ···, C 1, C 2, C 3 ··· and sequentially scan control, each blanking electrode pairs based on the information on the blanking pattern based on the image information state And This state is maintained by the capacitors 702A and 702B even after the scanning signal has passed. Next, the blanking array control device 119 determines A ₁ , A ₂ , A ₃ , ..., B ₁ , B ₂ , B ₁ , ... For each blanking electrode pair.
, C ₁ , C ₂ , C ₃ ... In this order, the capacitor discharge control signal is input, the capacitors 702A and 702B are discharged, and then the next blanking voltage control signal is input. This is repeated below. By doing so, each blanking electrode pair can maintain a constant state while scanning the signal. It is also possible to change the state for each scan. In this example, 100
About 800 to control x100 blanking electrode pairs
Book wiring is sufficient, and it is possible to greatly reduce it.

Next, one embodiment of a method for manufacturing the blanking array 104 will be described with reference to FIGS. 8, 9 and 10. FIG. 8C and FIG. 9 show a partial XX ′ cross section in the blanking array shown in FIG. 10.
This manufacturing method applies a silicon process used for manufacturing a semiconductor. That is, in FIG. 8A, the transistors 703A, 703B, 704A,
An insulating film 802 such as a silicon oxide film is formed on the silicon substrate 801 having the 704B formed therein by a method such as thermal oxidation, anodic oxidation, CVD, or spin-on-glass coating. Then, the transistor 7 is formed on the insulating film 802.
Through holes for connecting wirings to 03A, 703B, 704A, and 704B are formed by a photoetching process. Then, a wiring metal film of Cr, W, Mo or the like is formed by sputtering or the like on the insulating film 802 including the through holes, and the wiring metal film is subjected to a photo etching process to form a wiring pattern 803a (signal line 705).
Or 713 corresponds. ), 803b (signal line 706
Or 714 corresponds. ), 803c (-voltage line 70
The 7 or + voltage line 715 corresponds. ), 803d (corresponding to the ground line 708 or 716. Since the ground line 708 and the ground line 716 can be shared, one of them can be deleted), and the transistors 703A, 703B, and 704 are formed.
A, 704B. Next, the wiring pattern 80
An insulating film 804 is formed on 3a, 803b, 803c, and 803d as before. After that, by photo-etching, a groove is formed in the portions 811a and 811b, and M is formed in this groove.
The electrode material such as o is filled with a scatter, and then the photoresist is removed, or the electrode material such as Mo is grown only on the groove portions 811a and 811b by the lift-off method.

The above steps are repeated several times to form the wiring layer 80.
5, insulating film 806, electrode material film 812 such as Mo, wiring layer 807, insulating film 808, electrode material film 813 such as Mo, wiring layer 809, insulating film 810, electrode material film 81 such as Mo
4 are sequentially formed. At this time, each of the opposing electrode material films is connected to a wiring pattern of a predetermined wiring layer, and a desired transistor (control element) formed on the silicon substrate 801 via the wiring layer below the wiring pattern. Will be connected with. Even if the transistor (control element) is not formed in the silicon substrate 801, the desired wiring layer 8 is formed.
It is also possible to form it in 05. After that, the portion that becomes the blanking window 303, that is, 100 shown in FIG.
1, 1002, 1003, 1004, 1005, 100
The portion 5 ... is removed by photoetching. This corresponds to removing the left and right of the two-dot chain lines 812 and 813 in FIG. The same portion of the silicon substrate 801 is also removed by etching from below. Silicon substrate 80
Since No. 1 is thick, it is preferable to make it thin to some extent with a hydrofluoric acid-based etching solution having a high etching rate, and then dry etching to raise the window. In this way, FIG. 8 (c)
A cross section as shown in is obtained. As a result, in each window (rectangular opening) 303 arranged two-dimensionally, each of the blanking electrodes 304 and 305 facing each other is formed on the silicon substrate 8.
01 is connected to the desired transistor formed on the transistor 01.

FIG. 9 shows an embodiment including capacitors 702A and 702B. By installing electrode pairs 901 and 902 in parallel and facing each other, capacitors 702A and 702 are provided.
Each of B will be configured. Dielectric film 903 in the meantime
For example, tantalum pentoxide having a large dielectric constant can be manufactured and used by a method such as a slaughter, thermal oxidation, or anodic oxidation. Then, one of the electrode pairs 901 is connected to a desired transistor formed on the silicon substrate 801 through the wiring layer thereunder, and the other electrode pair 902 is connected to the blanking electrode. . The above is an embodiment in which a silicon process is used as a method for manufacturing a blanking array, but other manufacturing methods such as a thick wafer process on a ceramic substrate, a thin film process, and a mechanical assembly method can also be used.

Next, an embodiment in which the etching or deposition apparatus by ion beam irradiation according to the present invention shown in FIG. 1 is applied will be described. FIG. 11 is a diagram for explaining an embodiment in which defect correction of a mask or reticle is performed by ion beam irradiation. When repairing a defect on a mask or reticle, a defect having a complicated shape is a problem. In FIG. 11, 1101 is a regular pattern, and the shaded 1102a, 110
2b and 1102c are defect patterns. The image processing device 122 is a mode of the scanning ion image detected by the secondary particle detector 114 based on the defect pattern information from the inspection device input by the input means such as the network or the recording medium as shown by the arrow A. When switched to, the defect pattern 1102 can be detected and recognized on the monitor 115. Further, the image processing device 122 designates only the defective portion (processing region) based on the image information detected and recognized on the monitor 115, and causes the blanking array control device 119 to designate the defective portion (processing region) based on the information regarding the designated blanking pattern. , Its part (processing area)
The blanking array 104 is driven and controlled so that only the ion beam passes through and the other portion is blanked.
As a result, the image of the blanking array 104 is
The reduction projection modes 05 and 107 are used for the reduction, the positions of the defects 1102a, 1102b, and 1102c are aligned with high accuracy, and irradiation is performed to perform etching removal processing. Depending on the material, it is effective to use a reactive gas together. Although the case where the defect is a black dot defect has been described above, when the defect is a white dot defect, it can be corrected by depositing the carbon film by ion beam CVD. In the above, the case where the defect of the mask or the reticle is corrected has been described.
It can also be applied to wiring correction and fine processing on wiring boards such as I and TFT substrates.

FIG. 12 is a diagram for explaining an embodiment in which a character, a design or the like is marked on an LSI device by irradiating it with an ion beam. By the way, as an example of an LSI device, there is an increasing demand for writing information about the chip on the chip under legal regulations such as the Product Liability Law and the Environmental Law. In this embodiment, the model number 1201 and the manufacturing date 1 are provided on the end of the chip.
202, materials used 1203, manufacturing conditions 1204, etc. are entered. Reference numeral 1205 is an LSI pattern. Information about the marking pattern such as the character pattern or the design pattern is obtained from the LSI production management system, and the obtained information about the marking pattern is input to the image processing device 122 by an input means such as a network or a recording medium as shown by an arrow A. To enter. Image processing device 122
Is converted into image information from the information about the input marking pattern, obtain information about the blanking pattern based on the image information about the converted marking pattern, based on the information about the obtained blanking pattern, By the blanking array controller 119,
Marking can be performed by driving and controlling the blanking array 104. The relative alignment between the image information and the workpiece is performed by the secondary particle detector 114.
The scanning ion image detected from the above may be used, or an optical microscope installed in parallel with the ion beam lens barrel may be used.
Further, a fine metal film pattern can be formed by ion beam CVD by spraying a deposition gas such as an organometallic compound such as Mo (CO) ₆ or W (CO) ₆ or an organic non-metallic compound such as TEOS. it can.

[0029]

According to the present invention, by using a blanking array which is irradiated with an ion beam, a pattern such as an arbitrary figure is reduced and projected onto a workpiece and an arbitrary fine pattern is immediately etched. Alternatively, it is possible to perform a deposition process.

Further, according to the present invention, by using the blanking array which receives the irradiation of the ion beam, it is possible to accurately align the workpiece with the pattern based on the secondary particle image to form a pattern such as an arbitrary figure. It is possible to perform an etching process or a deposition process on an arbitrary fine pattern by reducing projection. Further, according to the present invention, by using a blanking array having resistance to irradiation of an ion beam, a pattern such as an arbitrary figure is reduced and projected on a workpiece to immediately etch an arbitrary fine pattern. It has an effect that it can be processed or deposited. Further, according to the present invention, a blanking array is used for ion beam irradiation, and a pattern such as an arbitrary figure matched with the shape of the fine defect pattern is reduced and projected to produce an arbitrary fine defect pattern on the mask. There is an effect that can be corrected immediately by etching or depositing.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an embodiment of an ion beam projection processing apparatus for performing etching processing or deposition processing by ion beam irradiation according to the present invention.

FIG. 2 is a plan view showing a schematic configuration of a blanking array according to the present invention.

FIG. 3 is a diagram showing a cover that covers an electrode portion of a blanking array according to the present invention.

FIG. 4 is a diagram showing the overlap of images when a sample (workpiece) is placed at a position slightly away from the image plane of the blanking array according to the present invention.

FIG. 5 is a diagram showing a method of scanning an ion beam on a sample (workpiece) by scanning a blanking electrode pair in the ion beam ON state of the blanking array according to the present invention.

FIG. 6 is a diagram showing an embodiment of a wiring method for a blanking array according to the present invention.

FIG. 7 is a diagram showing an embodiment of a wiring method for a blanking array according to the present invention.

FIG. 8 is a diagram for explaining an example of a method of manufacturing a blanking array using the silicon process according to the present invention.

FIG. 9 is a diagram for explaining an example of a method of manufacturing a blanking array having capacitors using a silicon process according to the present invention.

FIG. 10 is a plan view of a blanking array for explaining an embodiment of a method for manufacturing a blanking array using a silicon process according to the present invention.

[Explanation of symbols]

101 ... High-intensity ion source, 102 ... Ion beam, 1
Reference numeral 03 ... Collimating lens, 104 ... Blanking array, 105, 107 ... Lens, 106 ... Planning aperture, 108 ... Deflector, 113 ... Sample (workpiece), 114 ... Secondary particle detector, 115 ... Monitor, 11
9 ... Blanking array control device, 122 ... Image processing device, 123 ... Control device, 124 ... Gas nozzle, 130 ...
Power source, 301 ... Support plate, 303 ... Opening part, 304, 30
5 ... Blanking electrode pair, 306 ... Window, 307 ... Cover, 601, 602 ... Wiring, 701 ... Blanking electrode, 702 ... Capacitor, 703, 70
4 ... Control element (transistor), 705, 706, 71
3, 714 ... Signal line, 707 ...- Voltage line, 708, 71
6 ... Ground line, 715 ... + voltage line.

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mikio Hongo 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa, Ltd. Production Engineering Research Laboratory, Hitachi, Ltd. (56) Reference JP-A-8-212950 (JP, A) Kaihei 8-17698 (JP, A) JP 7-65772 (JP, A) JP 9-223726 (JP, A) JP 61-135121 (JP, A) JP 6-132187 ( JP, A) JP 61-42128 (JP, A) JP 4-115447 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/302 H01J 37/305

Claims (6)

(57) [Claims] 1. A high-intensity ion source, a first optical system for converting an ion beam extracted from the high-intensity ion source and having a large divergence angle into a substantially parallel beam, and the first optical system. A plurality of blanking electrodes for deflecting the ion beam in response to the irradiation of the substantially parallel beam and arranged in a two-dimensional manner, and a control element for controlling the potential or current to each of the blanking electrodes is provided in the wiring region for wiring. And a blanking array formed so as to be connected to the blanking array and the control element provided on the blanking array when detecting the scanning secondary particles are sequentially controlled by controlling the arrayed blanking electrodes. The scanning ion beam is obtained from the blanking array by controlling the control element through the wiring to further process each blanking electrode. A blanking array control system that obtains an arbitrary blanking pattern image by controlling the potential or current to the scanning, and a scan obtained from the blanking array under the control of the blanking array control system when detecting the secondary scanning particles. When a workpiece is irradiated with an ion beam through a blanking aperture and further processed, the blanking array control system controls the blanking array to form an arbitrary blanking pattern image by the ion beam formed by the blanking array. A second optical system for reducing and projecting an image on a workpiece through the through-beam and a scanning ion beam obtained from the blanking array under the control of the blanking array control system when detecting the scanning secondary particles. Added by the above second optical system through the ranking aperture A secondary particle detector for irradiating an object to detect scanning secondary particles obtained from the workpiece, and a blanking pattern from an image signal based on the scanning secondary particles detected by the secondary particle detector Image processing means for creating information and inputting or feeding back the information to the blanking array control system, and the blanking based on the information on the blanking pattern received from the image processing means or fed back during the processing. Arranging an arbitrary blanking pattern image obtained from the blanking array under the control of the array control system by reducing the size of the blanking pattern image onto the workpiece by the second optical system to form an image, and thereby processing the workpiece. An ion beam projection processing device characterized by. 2. A high-intensity ion source, a first optical system for converting an ion beam extracted from the high-intensity ion source and having a large divergence angle into a substantially parallel beam, and the first optical system. A plurality of blanking electrodes for deflecting the ion beam in response to the irradiation of the substantially parallel beam and arranged in a two-dimensional manner, and a control element for controlling the potential or current to each of the blanking electrodes is provided in the wiring region for wiring. A blanking array formed to be connected to the blanking array and the control element provided on the blanking array are controlled through the wirings to control the potential or current to each blanking electrode, thereby controlling an arbitrary blanking pattern. A blanking array control system that obtains an image and a blanking pattern image by the ion beam formed by the blanking array A second optical system for reducing and projecting an image on the workpiece through the king aperture, and input design information of the workpiece, inspection information of the workpiece, or an image of a pattern formed on the workpiece. Image processing means for creating information about the blanking pattern based on the information and inputting or feeding back the information to the blanking array control system, and relating to the blanking pattern that has received the input or feedback from the image processing means during processing. An arbitrary blanking pattern image obtained from the blanking array under the control of the blanking array control system based on the information is reduced and projected onto the workpiece by the second optical system to form an image of the workpiece. An ion beam projection processing apparatus, which is configured to be processed. 3. A high-intensity ion source, a first optical system for converting an ion beam extracted from the high-intensity ion source and having a large divergence angle into a substantially parallel beam, and the first optical system. A plurality of blanking electrodes for deflecting the ion beam in response to the irradiation of the substantially parallel beam and arranged in a two-dimensional manner, and a control element for controlling the potential or current to each of the blanking electrodes is provided in the wiring region for wiring. And a blanking array formed so as to be connected to the blanking array and the control element provided on the blanking array when detecting the scanning secondary particles are sequentially controlled by controlling the arrayed blanking electrodes. The scanning ion beam is obtained from the blanking array by controlling the control element through the wiring to further process each blanking electrode. A blanking array control system that obtains an arbitrary blanking pattern image by controlling the potential or current to the scanning, and a scan obtained from the blanking array under the control of the blanking array control system when detecting the secondary scanning particles. When a workpiece is irradiated with an ion beam through a blanking aperture and further processed, the blanking array control system controls the blanking array to form an arbitrary blanking pattern image by the ion beam formed by the blanking array. A second optical system for reducing and projecting an image on a workpiece through the through-beam and a scanning ion beam obtained from the blanking array under the control of the blanking array control system when detecting the scanning secondary particles. Added by the above second optical system through the ranking aperture A secondary particle detector for illuminating an object to detect scanning secondary particles obtained from the workpiece, and an image signal based on the scanning secondary particles detected by the secondary particle detector The blanking array control is performed by comparing the design information of the work piece, the inspection information of the work piece, or the image information of the pattern formed on the work piece, and based on the comparison result, the information about the blanking pattern is created. An image processing unit for inputting or feeding back to the system, and the blanking array is controlled by the blanking array control system based on information about a blanking pattern received from the image processing unit during the processing. An arbitrary blanking pattern image obtained from the above is reduced and projected onto the workpiece by the second optical system to form an image, and the blanking pattern image is formed. An ion beam projection processing apparatus, characterized in that it is configured to process. 4. Furthermore, the secondary particle detector of claim 1 or 3, wherein further comprising a display means for displaying an image signal based on the detected scanning secondary particles from the ion beam projection processing apparatus . 5. An ion beam, which is extracted from a high-intensity ion source and has a large divergence angle, is converted into a substantially parallel beam by the first optical system, and the converted substantially parallel beam is irradiated to the ion beam. A blanking array in which a large number of blanking electrodes for deflecting light are arrayed two-dimensionally and a control element for controlling the potential or current to each blanking electrode is provided in the wiring region and connected to the wiring. A blanking array control system controls the control elements through the wirings to sequentially control the arranged blanking electrodes to obtain a scanning ion beam, and a blanking aperture is used to obtain a second optical system on the workpiece. A first process for irradiating and detecting scanning secondary particles obtained from a workpiece by a secondary particle detector and observing an image based on the detected scanning secondary particles. And the blanking array, which converts an ion beam having a large divergence angle extracted from the high-intensity ion source into a substantially parallel beam by the first optical system and receives irradiation of the converted substantially parallel beam. In contrast, controlling the control element through the wiring of the blanking array control system based on the secondary particle image observed in the first step to control the potential or current to each blanking electrode. An arbitrary blanking pattern image formed by the ion beam formed by the above is reduced and projected on the workpiece by the second optical system through the blanking aperture to form an image, and the workpiece is etched or deposited. And a second step of performing the ion beam projection processing method. 6. An ion beam, which is extracted from a high-intensity ion source and has a large divergence angle, is converted into a substantially parallel beam by the first optical system, and is irradiated with the converted substantially parallel beam. A blanking array in which a large number of blanking electrodes for deflecting light are arrayed two-dimensionally and a control element for controlling the potential or current to each blanking electrode is provided in the wiring region and connected to the wiring. A blanking array control system controls the control elements through the wirings to sequentially control the arranged blanking electrodes to obtain a scanning ion beam, and a blanking aperture is used to obtain a second optical system on the workpiece. Scanning secondary particles obtained from the workpiece by irradiation and detection by the secondary particle detector are detected, and a plan based on the image signal based on the detected scanning secondary particles is detected. A first step of creating information about a King pattern, and converting an ion beam having a large divergence angle extracted from the high-intensity ion source into a substantially parallel beam by the first optical system, The blanking array control system controls the control element through the wiring on the basis of the blanking pattern information created in the first step with respect to the blanking array which is irradiated with parallel beams. An arbitrary blanking pattern image by an ion beam formed by controlling the potential or current to the blanking electrode is projected on the workpiece by the second optical system through the blanking aperture to form an image. And a second step of etching or depositing the workpiece. Ion-beam projection processing method according to symptoms.