JPH1187873A - Wiring board, manufacture thereof, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a working efficiency when a semiconductor chip is mounted on a mother board. SOLUTION: An insulting board 4 formed of transparent or semitransparent material, first electrodes 5 formed on the one surface of the insulating board 4 corresponding to a semiconductor chip 3, second electrodes 6 each formed on the one or other surface of the insulating board 4 corresponding to the first electrodes 5 and larger in inter-electrode pitch than the first electrodes 5, and conductor connecting means which connect the corresponding electrodes 5 and 6 together with a conductor are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[Table of Contents] The present invention will be described in the following order.

BACKGROUND OF THE INVENTION Problems to be Solved by the Invention Means for Solving the Problems Embodiments of the Invention (1) First Embodiment (FIGS. 1 and 2) (2) Second Embodiment Second Embodiment (FIGS. 3 and 4) (3) Other Embodiments Effects of the Invention

[0003]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board, a method of manufacturing the same, and a semiconductor device, for example, for mounting a semiconductor chip having a narrow pitch between electrodes on a mother board, for expanding the pitch between the semiconductor chips. The present invention is suitably applied to an intermediate substrate to be used and a semiconductor device in which a semiconductor chip is mounted on the intermediate substrate.

[0004]

2. Description of the Related Art Conventionally, there is a flip chip mounting method as one of mounting methods for mounting a semiconductor chip on a mother board.

In this flip-chip mounting method, bumps formed of projecting electrodes are formed on each electrode (hereinafter, referred to as a pad) provided on a circuit surface of a semiconductor chip.
This is a mounting method in which the semiconductor chip is directly mounted face down on the mounting surface of the mother board, and has an advantage that the semiconductor chip can be mounted at a high density.

In recent years, however, electronic devices have been becoming lighter, thinner and smaller, and high-performance integration and high-speed signal processing have been progressing. As a result, the pitch between electrodes of semiconductor chips has been increasingly narrow.

Forming a plurality of lands and wiring patterns on a mother substrate in correspondence with each pad of such a narrow-pitch semiconductor chip requires a high level of technology and also leads to a cost increase. .

For this reason, in recent years, as a method of mounting a semiconductor chip on a mother board using an existing mounting technique,
2. Description of the Related Art A technique for mounting a semiconductor chip on a mother board via an intermediate board called an interposer has been widely used.

In this case, the interposer is formed on a surface of an insulating substrate made of glass epoxy resin, polyimide, or the like, which is substantially the same shape as the semiconductor chip and approximately one size larger, and has a plurality of first and second bumps in the same positional relationship as the semiconductor chips. One electrode is formed and the other side of the insulating substrate (ie,
On the side facing the mounting surface of the mother board), a plurality of second electrodes are formed at intervals larger than the pitch between the first electrodes so as to correspond to the first electrodes, respectively, and the corresponding first and second electrodes are formed. Are electrically connected via a wiring pattern and a through hole in order.

The mounting of the semiconductor chip on the motherboard using the interposer is performed by mounting the semiconductor chip on one side of the interposer and then mounting the interposer on the motherboard.

Therefore, according to the method using such an interposer, the pitch between the electrodes of the mother substrate is increased by the amount corresponding to forming the electrode pattern of the mother substrate in accordance with the electrode pattern of the second electrode of the interposer. Therefore, there is an advantage that the mother substrate can be formed easily and inexpensively.

[0012]

In a method of manufacturing a semiconductor chip using an interposer, since each bump of the semiconductor chip is provided on a circuit surface (that is, a bottom surface), the semiconductor chip is flip-chip mounted on the interposer. The bonding state between each bump of the semiconductor chip and the corresponding first electrode of the interposer cannot be visually confirmed from the outside. For this reason, the user has to check the conduction state of each joint by sending a signal to the circuit and confirming each one, and there is a problem that the working efficiency is poor.

The present invention has been made in view of the above points, and is intended to propose a wiring board, a method of manufacturing the same, and a semiconductor device capable of improving work efficiency when mounting a semiconductor chip on a mother board. is there.

[0014]

According to the present invention, there is provided an insulating substrate formed using a transparent or translucent material, and an electrode of a semiconductor chip on one surface of the insulating substrate. A plurality of first electrodes formed in correspondence with each other, and an inter-electrode pitch wider than the inter-electrode pitch of the first electrodes on one surface side or the other surface side of the insulating substrate corresponding to each first electrode. A second electrode formed by
And a conductor connecting means for conducting a conductor connection between corresponding ones of the second electrodes.

Thus, the inspection of the bonding state between each electrode of the semiconductor chip after the semiconductor chip is mounted on the wiring board and the first electrode formed on the insulating substrate is visually performed by utilizing the transparency of the insulating substrate. Therefore, it can be easily confirmed.

Further, a plurality of first electrodes are formed on one surface of an insulating substrate formed using a transparent or translucent material, respectively, corresponding to the respective electrodes of the semiconductor chip. A second electrode is formed on the surface side with an inter-electrode pitch wider than the inter-electrode pitch of the first electrode corresponding to each first electrode, and the corresponding one of the first and second electrodes A first step of connecting the conductors to each other, and pressing a jig of a predetermined shape corresponding to the semiconductor chip against a surface of the insulating substrate in a state where the insulating substrate is heated to a predetermined temperature for a predetermined pressure and for a predetermined time to form a semiconductor chip. And a second step of forming a recess for accommodating therein.

Thus, the above-mentioned wiring board can be manufactured, and the inspection of the bonding state between each electrode of the semiconductor chip and the first electrode formed on the insulating substrate after the semiconductor chip is mounted on the wiring board. Can be easily confirmed visually using the transparency of the insulating substrate.

In a semiconductor device having a semiconductor chip mounted on one surface side of a wiring board, the wiring board includes an insulating substrate formed using a transparent or translucent material and an insulating substrate forming one surface of the wiring board. A plurality of first electrodes formed on one side corresponding to the respective electrodes of the semiconductor chip, and electrodes of the first electrodes corresponding to the respective first electrodes on one side or the other side of the insulating substrate. A second electrode formed by an inter-electrode pitch wider than the inter-electrode pitch and a conductor connecting means for electrically connecting corresponding ones of the first and second electrodes are provided.

Thus, the bonding state between each electrode of the semiconductor chip and the first electrode formed on the insulating substrate after the semiconductor chip is mounted on the wiring board is visually inspected by utilizing the transparency of the insulating substrate. Thus, after easy confirmation, the semiconductor device can be easily mounted on the motherboard.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings.

(1) First Embodiment In FIGS. 1 and 2, reference numeral 1 denotes a semiconductor device according to the first embodiment as a whole, and a semiconductor chip 3 is flip-chip mounted on an interposer 2.

In this case, in the interposer 2, a plurality of first electrodes 5 are formed on one surface 4A of the insulating substrate 4 in correspondence with the bumps 3A of the semiconductor chip 3, and the other surface 4B of the insulating substrate 4 is formed. A plurality of second electrodes 6 are formed on the sides with pitches (for example, 150 [μm]) wider than the first inter-electrode pitch (for example, 100 [μm]) corresponding to the first electrodes 5, respectively. Corresponding ones of the first electrode 5 and the second electrode 6 are electrically connected to each other via a wiring pattern 7 formed on the one surface 4A side of the insulating substrate 4 and a through hole 8 sequentially. ing.

The semiconductor chip 3 has a bump 3A formed on each electrode and an insulating substrate 4 of the interposer 2.
The insulating substrate 4 is thermocompression-bonded via the anisotropic conductive adhesive 9 so as to be electrically connected to the corresponding first electrode 5.

As a result, in this semiconductor device 1,
Each of the bumps 10 formed on each of the second electrodes 6 of the interposer 2 is used as an external electrode.
Are electrically and physically bonded to the corresponding lands 12 of the motherboard 11 so that they can be mounted on the motherboard 11.

In addition to this configuration, in the case of the semiconductor device 1, the insulating substrate 4 of the interposer 2 is formed using a transparent glass material. Thereby, in the semiconductor device 1, the bump 3A of the semiconductor chip 3 and the interposer 2
The positioning with the first electrode 5 and the inspection of the bonding state can be visually performed via the interposer 2.

In the interposer 2, the first electrode 5 and the wiring pattern 7 are formed on one surface 4A of the insulating substrate 4 made of a flat glass plate by vapor deposition.
A drilling process is performed on the leading end portion of the wiring pattern 7 using a drill, a laser, or the like, and a through hole 8 is formed by plating the inner peripheral surface. The second hole 4 is electrically connected to the through hole 8 on the other surface 4B. It can be manufactured by forming two electrodes 6.

In the above configuration, in the semiconductor device 1, after the semiconductor chip 3 is flip-chip mounted on the interposer 2, the semiconductor chip 3 and the interposer 2 are mounted.
The state of the joint portion with can be easily visually confirmed via the interposer 2 made of a transparent glass plate.

Therefore, in the semiconductor device 1, the bonding state between the bump 3A of the semiconductor chip 3 and the corresponding first electrode 5 of the interposer 2 is inspected one by one by applying a signal to the circuit as in the prior art. This can be significantly simplified compared to the case where

In the semiconductor device 1, the glass plate is used as the insulating substrate 4 of the interposer 2 as described above, so that the insulating substrate made of an insulating resin material such as a glass epoxy resin is used as in the conventional interposer. In comparison, the flatness of the surface of the insulating substrate 4 can be increased, and the electrical conduction between the semiconductor chip 3 and the interposer 2 can be ensured accordingly. Reliability can be improved.

Further, in the semiconductor device 1, since the insulating substrate 4 of the interposer 2 is formed of a glass material,
The heat resistance is higher than that of the conventional interposer, and as a result, the first electrode 5 and the wiring pattern 7 of the interposer 2 can be finely formed by vapor deposition during manufacturing. Accordingly, it is possible to sufficiently cope with a case where the pitch between the electrodes of the semiconductor chip 3 is narrower than that in the case of forming by exposure such as glass epoxy resin used for the insulating substrate of the conventional interposer. it can.

According to the above configuration, the plurality of first electrodes formed on the one surface side of the insulating substrate 4 formed of a transparent or translucent material, respectively, correspond to the bumps 3A of the semiconductor chip 3. A second electrode 6 formed on the other surface of the insulating substrate 4 with an inter-electrode pitch wider than the inter-electrode pitch of the first electrode 5 corresponding to each first electrode 5;
The semiconductor chip 3 is flip-chip mounted on the interposer 2 in which a wiring pattern 7 and a through hole 8 for forming a conductor connection between corresponding ones of the first and second electrodes 5 and 6 are formed. Inspection of the bonding state between each bump 3A of the chip 3 and each first electrode 5 of the interposer 2 can be easily confirmed visually, and thus the work efficiency in mounting the semiconductor chip 3 on the mother substrate 11 can be confirmed. Semiconductor device 1 capable of improving the above can be realized.

(2) Second Embodiment In FIG. 3, in which parts corresponding to those in FIG. 1 are assigned the same reference numerals, reference numeral 20 denotes a semiconductor device according to the second embodiment as a whole. The chip 3 is flip-chip mounted in a state opposite to that of the first embodiment.

In this case, the interposer 21 has a bottom surface slightly larger than the circuit surface of the semiconductor chip 3 at a central portion on one surface side of the insulating substrate 22 formed to have a predetermined size slightly larger than the semiconductor chip 3. A recess 23 having a size slightly deeper than the thickness of the semiconductor chip 3 including 3A is provided.

A plurality of first electrodes 24 are formed on the bottom surface of the concave portion 23 of the insulating substrate 22 so as to correspond to the bumps 3A of the semiconductor chip 3, respectively. In the portion, the inter-electrode pitch (for example, 150 [μm]) is wider than the first inter-electrode pitch (for example, 100 [μm]).
m]), a plurality of second electrodes 25 are formed, and the corresponding ones of the first electrode 24 and the second electrode 25 form a wiring pattern 26 formed along one surface of the insulating substrate 22. It is electrically connected through the switch. By the way, the insulating substrate 2
Nothing is arranged on the other surface side of the semiconductor device 2, and the semiconductor device 20 is formed so as to have a small thickness.

Further, the semiconductor chip 3 is connected via the anisotropic conductive adhesive 9 such that the bumps 3A formed on the respective electrodes are electrically connected to the corresponding first electrodes 24 on the insulating substrate 22 of the interposer 21. Thermocompression bonded.

Thus, in this semiconductor device 20, each second electrode 25 of the interposer 21 is used as an external electrode, and each of the second electrodes 25 is
It can be mounted on the mother board 11 so as to be electrically and physically connected to one corresponding land 12.

Further, in the semiconductor device 20, when mounted on the mother substrate 11, the semiconductor device 20 is mounted with the heat radiation rubber 27 disposed between the semiconductor chip 3 and the mother substrate 11.

In addition to this configuration, in the case of the semiconductor device 20, the insulating substrate 22 of the interposer 21 is formed using a transparent glass material. Thus, in the semiconductor device 20, positioning of the bump 3A of the semiconductor chip 3 and the first electrode 25 of the interposer 21 and inspection of the bonding state can be visually performed via the interposer 21.

Here, such a semiconductor device 20 corresponds to FIG.
It can be manufactured by the following procedures shown in (A) to (D).

That is, as shown in FIG. 4A, a first electrode 24 is formed on a flat surface 22A of an insulating substrate 22 made of a flat glass plate (for example, soda glass) having a predetermined size.
Then, a second electrode 26 and a wiring pattern 25 connecting between the first and second electrodes are formed by using an evaporation method.

Next, as shown in FIG. 4B, the insulating substrate 22 on which the first electrode 24, the second electrode 26, and the wiring pattern 25 are formed is heated to a predetermined temperature (about 500 degrees). A jig G having a shape corresponding to the semiconductor chip 3 is pressed at a predetermined pressure for a predetermined time.

Subsequently, as shown in FIG. 4C, cooling is performed by leaving the jig G removed from the insulating substrate 22 for a predetermined time. As a result, a recess 23 having a depth capable of accommodating the semiconductor chip 3 is formed, and the interposer 21 having the second electrode 26 which is wider than the pitch between the bumps 3A when the semiconductor chip 3 is mounted is manufactured. Can be.

Thereafter, as shown in FIG. 4D, the first electrode 24 formed on the bottom surface of the recess 23 of the interposer 21 thus formed and each bump 3A of the semiconductor chip 3 are anisotropically conductive. Electrically and physically connected via an adhesive 9. Thereby, the semiconductor device 20 that can be easily mounted on the mother substrate 11 via the second electrode 25 can be manufactured.

In the above configuration, the semiconductor device 20
Then, the state of the junction between the semiconductor chip 3 and the interposer 21 after the semiconductor chip 3 is flip-chip mounted on the interposer 21 can be easily visually confirmed via the interposer 21 made of a transparent glass plate. it can.

Accordingly, in this semiconductor device 20, the bumps 3A of the semiconductor chip 3 and the corresponding first
Inspection of the bonding state with the electrode 24 can be significantly simplified as compared with the conventional case where a signal is applied to a circuit to check each one.

In the semiconductor device 20, since the insulating substrate 22 of the interposer 21 is formed of a glass material, the heat resistance is higher than that of the conventional interposer. As a result, the first electrode 24 of the interposer 21 is manufactured at the time of manufacture. The second electrode 25 and the wiring pattern 26 can be formed using an evaporation method. Therefore, in the semiconductor device 20, even when the pitch between the electrodes of the semiconductor chip 3 is narrower than in the case where the semiconductor chip 3 is formed by exposure, such as a glass epoxy resin used for an insulating substrate of a conventional interposer, it is sufficient. Can be handled.

Further, in this semiconductor device 20, the use of a glass plate as the insulating substrate 22 of the interposer 21 makes the insulating substrate more insulated than the conventional interposer using an insulating substrate made of an insulating resin material such as glass epoxy resin. The flatness of the surface of the interposer 22 can be increased, and electrical conduction between the semiconductor chip 3 and the interposer 21 can be ensured by that much, so that poor electrical connection is reduced and the reliability of the interposer 21 is reduced. Can be improved.

Further, in the semiconductor device 20, the concave portion 23 is formed by pressing the jig G against the surface of the insulating substrate 22 of the interposer 21, and the semiconductor chip 3 is mounted and stored in the concave portion 23. Accordingly, when the interposer 21 is mounted on the mother board 11, the semiconductor chip 3 can be protected by the interposer 21.

Further, in this semiconductor device 20, the first electrode 2 is formed on one flat surface of the insulating substrate 22 of the interposer 21.
4. By forming the second electrode 25 and the wiring pattern 26 and pressing the jig G to form the concave portion 23, the semiconductor chip 3 is mounted on the interposer 21 when the semiconductor chip 3 is mounted on the interposer 21. The pitch interval between the bumps 3A can be expanded by the first electrode 24 and the second electrode 25 connected via the wiring pattern 26. Thus, the insulating substrate 4 can be extended like the interposer 2 of the first embodiment. In this case, there is no need for a step of forming the through-hole 8 and forming the second electrode 6 on the other surface 4B side, and the manufacturing process can be simplified.

Further, in this semiconductor device 20, the interposer 21 is provided with the concave portion 23 for accommodating the semiconductor chip 3, and the heat radiating rubber 27 is arranged between the semiconductor chip 3 and the mother substrate 11 for mounting. The semiconductor chip 3 after mounting can be stabilized by the elastic force of the heat radiation rubber 27, and the heat of the semiconductor chip 3 can be dissipated to the mother substrate 11 via the heat radiation rubber 27, thereby stabilizing the circuit. Can be achieved.

According to the above configuration, the plurality of first electrodes formed on the one surface side of the insulating substrate 22 formed using a transparent or translucent material, respectively, correspond to the bumps 3A of the semiconductor chip 3 respectively. 24, a second electrode 25 formed on one surface side of the insulating substrate 22 with an inter-electrode pitch wider than the inter-electrode pitch of the first electrode 24 corresponding to each of the first electrodes 24; Each of the bumps 3A of the semiconductor chip 3 is mounted by flip-chip mounting the semiconductor chip 3 on an interposer 21 in which a wiring pattern 26 for electrically connecting the corresponding one of the second electrodes 24 and 25 is formed. Inspection of the bonding state between the semiconductor chip 3 and each first electrode 24 of the interposer 21 can be easily confirmed visually, and thus the semiconductor chip 3 can be easily connected to the mother substrate 11.
Device 20 capable of improving work efficiency when mounting on semiconductor device 20
Can be realized.

(3) Other Embodiments In the first and second embodiments described above, the insulating substrates 4 and 2 of the interposers 2 and 21 as wiring boards are used.
2 has been described using a transparent glass plate, but the present invention is not limited to this, and each bump 3A of the semiconductor chip 3 and each of the first electrodes 5 and 24 of the interposers 2 and 21 are connected to each other. As long as the bonding state can be confirmed, a translucent member such as plastic or resin may be used.
In this case, the manufacturing method does not press the jig G in a heated state like a glass substrate, but manufactures by various forming methods such as vacuum forming.

In the first and second embodiments described above, the bump 3A of the semiconductor chip 3 and the interposer 2
Although the first electrode 5 or the bump 3A of the semiconductor chip 3 and the first electrode 24 of the interposer 21 are thermocompression-bonded via the anisotropic conductive adhesive 9, the present invention is not limited to this. The bumps 3A of the semiconductor chip 3 and the first of the interposers 2 and 21 are not limited to the above.
The semiconductor chip 3 may be mounted on the interposers 2 and 21 by other various methods such as conducting connection between the electrodes 5 and 24.

In the first and second embodiments, the insulating substrates 4 and 2 of the interposers 2 and 21 are used.
Although the case where the wiring patterns 7 and 26 of No. 2 are formed using the vapor deposition method has been described, the present invention is not limited to this, and the semiconductor chip 3 and the mother substrate 11 are formed using the anisotropic conductive adhesive 9. When mounting the semiconductor chip 3 and the mother board 11 using solder, the first electrode 5 which is a connection portion between the semiconductor chip 3 and the mother board 11 is used. And the second electrode 6 serving as a connection portion with the mother substrate 11.
You may make it use copper.

Further, in the above-described second embodiment, a case has been described in which the heat radiating rubber 27 is used as a heat radiating means for radiating the heat of the semiconductor chip 3.
The present invention is not limited to this. In other words, any other heat radiating means such as a heat radiating resin may be used as long as the heat of the semiconductor chip 3 can be radiated through the mother substrate 11.

Further, in the above-described first and second embodiments, the case where the wiring pattern 7, the through hole 8, and the wiring pattern 26 are used as the conductor connecting means has been described, but the present invention is not limited to this. Instead, other various conductor connection means may be used.

[0057]

As described above, according to the present invention, an insulating substrate formed using a transparent or translucent material, and one surface of the insulating substrate formed corresponding to each electrode of the semiconductor chip. A plurality of first electrodes and a first electrode corresponding to each first electrode on one surface side or the other surface side of the insulating substrate.
A second electrode formed with an inter-electrode pitch wider than the inter-electrode pitch of the first and second electrodes, and a conductor connection means for electrically connecting corresponding ones of the first and second electrodes. This makes it easy to visually inspect the bonding state between each electrode of the semiconductor chip and the first electrode formed on the insulating substrate after the semiconductor chip is mounted on the wiring board by utilizing the transparency of the insulating substrate. Thus, it is possible to realize a wiring board that can improve the working efficiency when mounting the semiconductor chip on the motherboard.

Further, a plurality of first electrodes are formed on one surface of an insulating substrate formed using a transparent or translucent material, respectively, corresponding to each electrode of the semiconductor chip. A second electrode is formed on the surface side with an inter-electrode pitch wider than the inter-electrode pitch of the first electrode corresponding to each first electrode, and the corresponding one of the first and second electrodes A first step of connecting the conductors to each other, and pressing a jig of a predetermined shape corresponding to the semiconductor chip against a surface of the insulating substrate in a state where the insulating substrate is heated to a predetermined temperature for a predetermined pressure and for a predetermined time to form a semiconductor chip. The above-described wiring board can be manufactured by providing the second step of forming a concave portion for housing the wiring board. Thus, the bonding state between each electrode of the semiconductor chip and the first electrode formed on the insulating substrate after the semiconductor chip is mounted on the wiring board is visually inspected using the transparency of the insulating substrate. A method of manufacturing a wiring board which can be easily confirmed and thus can improve the working efficiency when mounting a semiconductor chip on a mother board can be realized.

In a semiconductor device in which a semiconductor chip is mounted on one surface of a wiring board, the wiring board includes an insulating substrate formed using a transparent or translucent material and an insulating substrate forming one surface of the wiring board. A plurality of first electrodes formed on one side corresponding to the respective electrodes of the semiconductor chip, and electrodes of the first electrodes corresponding to the respective first electrodes on one side or the other side of the insulating substrate. A semiconductor chip is provided by providing a second electrode formed by an inter-electrode pitch wider than the inter-electrode pitch and a conductor connecting means for electrically connecting corresponding ones of the first and second electrodes. After the semiconductor chip is mounted on the wiring board and the inspection of the bonding state between each electrode of the semiconductor chip and the first electrode formed on the insulating substrate is easily confirmed visually by utilizing the transparency of the insulating substrate. This semiconductor device is It can be easily implemented in.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a top view showing the semiconductor device mounted on the motherboard according to the first embodiment of the present invention.

FIG. 3 is a sectional view showing a configuration of a semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a schematic diagram illustrating a method of manufacturing an interposer according to a second embodiment of the present invention.

[Explanation of symbols]

1, 20 ... semiconductor device, 2, 21 ... interposer,
3 ... semiconductor chip, 3A ... bump, 4, 24 ... first electrode, 6, 26 ... second electrode, 7, 25 ... wiring pattern, 8 ... through hole, 9 ... anisotropic Conductive adhesive, 11 ... mother board.

Claims (7)

[Claims] An insulating substrate formed by using a transparent or translucent material; a plurality of first electrodes formed on one surface of the insulating substrate so as to correspond to respective electrodes of a semiconductor chip; A second electrode formed on the one surface side or the other surface side of the insulating substrate with an inter-electrode pitch wider than the inter-electrode pitch of the first electrode corresponding to each of the first electrodes; A wiring board, comprising: a conductor connecting means for conductor-connecting a corresponding one of the first and second electrodes. 2. The method according to claim 1, wherein the transparent or translucent material forming the insulating substrate is a glass material.
The wiring board according to the above. 3. The wiring board according to claim 1, wherein the insulating substrate has a concave portion on the one surface side, the concave portion being large enough to accommodate the semiconductor chip. 4. A plurality of first electrodes corresponding to each electrode of a semiconductor chip are formed on one surface of an insulating substrate formed using a transparent or translucent material, and the first surface of the insulating substrate is formed. A second electrode is formed on the side or the other side with an inter-electrode pitch wider than the inter-electrode pitch of the first electrode corresponding to each of the first electrodes, and the first and second electrodes are formed. A first step of electrically connecting corresponding ones of the electrodes to each other, and a jig having a predetermined shape corresponding to the semiconductor chip is applied to the one surface of the insulating substrate while heating the insulating substrate to a predetermined temperature under a predetermined pressure and pressure. Forming a recess for accommodating the semiconductor chip by pressing for a predetermined time. 5. A semiconductor device in which a semiconductor chip is mounted on one surface side of a wiring board, wherein the wiring board includes an insulating substrate formed using a transparent or translucent material, and the one surface of the wiring board. A plurality of first electrodes formed on one surface of the insulating substrate to be formed so as to correspond to the respective electrodes of the semiconductor chip; and a plurality of first electrodes formed on the one surface or the other surface of the insulating substrate. A second electrode formed with an inter-electrode pitch wider than the inter-electrode pitch of the first electrode, and a conductor connection for electrically connecting corresponding ones of the first and second electrodes. A semiconductor device comprising: 6. The transparent or semi-transparent material forming the insulating substrate is made of a glass material.
3. The semiconductor device according to claim 1. 7. The semiconductor device according to claim 5, wherein the insulating substrate has a concave portion on the one surface side, the concave portion being large enough to accommodate the semiconductor chip.